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    2N6790 Price and Stock

    Microchip Technology Inc 2N6790

    MOSFET N-CH 200V 3.5A TO39
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    Microchip Technology Inc JANTX2N6790

    MOSFET N-CH 200V 3.5A TO39
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    Microchip Technology Inc JANTX2N6790U

    MOSFET N-CH 200V 2.8A 18ULCC
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    Microchip Technology Inc JANTXV2N6790

    MOSFET N-CH 200V 3.5A TO205AF
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    Microchip Technology Inc JANTXV2N6790U

    MOSFET N-CH 200V 2.8A 18ULCC
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    2N6790 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6790 Fairchild Semiconductor 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Original PDF
    2N6790 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6790 Intersil TRANS MOSFET N-CH 200V 3.5A 3TO-205AF Original PDF
    2N6790 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V TO-205AF Original PDF
    2N6790 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    2N6790 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6790 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6790 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    2N6790 Motorola Switchmode Datasheet Scan PDF
    2N6790 Motorola European Master Selection Guide 1986 Scan PDF
    2N6790 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    2N6790 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6790 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6790 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6790 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6790 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6790 Unknown FET Data Book Scan PDF
    2N6790 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6790 Semelab MOS Transistors Scan PDF
    2N6790 Semelab MOS POWER Transistor Scan PDF

    2N6790 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6790

    Abstract: TB334
    Text: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching


    Original     		PDF 2N6790 2N6790 O-205AF TB334

    2N6790

    Abstract: TB334
    Text: 2N6790 Data Sheet November 1998 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high


    Original     		PDF 2N6790 2N6790 TB334

    2N6790

    Abstract: IRFF220
    Text: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING


    Original     		PDF 2N6790 IRFF220 O-205AF) 2N6790 IRFF220

    2N6788

    Abstract: 2n6790
    Text: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and


    Original     		PDF 2N6788 2N6790 MIL-PRF-19500/555 2N6790 MIL-PRF-19500/555. T4-LDS-0164,

    Untitled

    Abstract: No abstract text available
    Text: 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage


    Original     		PDF 2N6790U MIL-PRF-19500/555 2N6790U 2N6790U. MIL-PRF-19500/555 O-205AF T4-LDS-0229-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING


    Original     		PDF 2N6790 IRFF220 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage


    Original     		PDF 2N6790U MIL-PRF-19500/555 2N6790U 2N6790U. MIL-PRF-19500/555 T4-LDS-0229-1,

    mosfet 2n6788

    Abstract: No abstract text available
    Text: 2N6788U and 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and


    Original     		PDF 2N6788U 2N6790U MIL-PRF-19500/555 2N6790U 2N6788 2N6790 MIL-PRF-19500/555. T4-LDS-0164-1, mosfet 2n6788

    Untitled

    Abstract: No abstract text available
    Text: 2N6790 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		PDF 2N6790

    2N6790

    Abstract: diode 0229
    Text: 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage


    Original     		PDF 2N6790 MIL-PRF-19500/555 2N6790 2N6790. MIL-PRF-19500/555. O-205AF T4-LDS-0229, diode 0229

    2N6790

    Abstract: No abstract text available
    Text: 2N6790 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF 2N6790 O205AF) 11-Oct-02 2N6790

    Untitled

    Abstract: No abstract text available
    Text: 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage


    Original     		PDF 2N6790 MIL-PRF-19500/555 2N6790 2N6790. MIL-PRF-19500/555. O-205AF T4-LDS-0229,

    2N6790

    Abstract: TB334
    Text: 2N6790 Data Sheet November 1998 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


    Original     		PDF 2N6790 O-205AF 2N6790 TB334

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Untitled

    Abstract: No abstract text available
    Text: • 4302E71 QDS37bb T3T ■ HAS 2N6790 HARRIS N -Channel Enhancem ent-Mode Power MOS Field-Effect Transistor August 1991 Features Pa ckage T 0 -2 0 5 A F BOTTOM VIEW • 3.5A, 2 0 0 V * rD S o n = 0 . 8 0 • S O A is P o w e r- D is s ip a t io n Lim ited


    OCR Scan     		PDF 4302E71 QDS37bb 2N6790 LH0063

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 2N6790


    OCR Scan     		PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2n6789

    Abstract: No abstract text available
    Text: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


    OCR Scan     		PDF c13M7cit QG1G54Û 2N6789 2N6790

    2N6790

    Abstract: diode RA 225 R
    Text: 2N6790 23 HARRIS N-Channel Enhancement-Mode Power MOS Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 3.5A, 200V * rD S on = 0 -8 n * S O A is P ow er-D issip atio n Lim ited SOURCE • N anosecond Switching S peeds GATE _


    OCR Scan     		PDF 2N6790 T0-205A LHQ063 2N6790 diode RA 225 R

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan     		PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500