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    2SA0921 Search Results

    2SA0921 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA0921 Panasonic PNP Transistor Original PDF
    2SA0921 Panasonic Small signal silicon PNP transistor Original PDF
    2SA0921 Panasonic TRANS GP BJT PNP 120V 0.02A 3TO-92-B1 Original PDF
    2SA0921 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA0921R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA0921S Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA0921T Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SA0921 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA0921

    Abstract: 2SC1980
    Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open)


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    PDF 2SC1980 2SA0921 2SA0921 2SC1980

    2SA921

    Abstract: 2SC1980 2SA0921 2SC198
    Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2


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    PDF 2SA0921 2SA921) 2SC1980 2SA921 2SC1980 2SA0921 2SC198

    2SA0921

    Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980
    Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)


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    PDF 2SC1980 2SA0921 2SA921) 2SA0921 2SA921 2SC1980 TRANSISTOR 2sc1980

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 M Di ain


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    PDF 2SC1980 2SA0921

    2SA0921

    Abstract: 2SA921 2SC1980
    Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)


    Original
    PDF 2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980

    2SA0921

    Abstract: 2SA921 2SC1980
    Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2 • Features


    Original
    PDF 2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi


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    PDF 2SA0921 2SA921) 2SC1980

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2


    Original
    PDF 2SA0921 2SA921) 2SC1980

    2SA0921

    Abstract: 2SA921 2SC1980
    Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original
    PDF 2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO 120 V Collector-emitter voltage Base open


    Original
    PDF 2SC1980 2SA0921

    2SA0921

    Abstract: 2SC1980
    Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 • Features


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    PDF 2SC1980 2SA0921 2SA0921 2SC1980

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


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    PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


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    PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SC5224

    Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A


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    PDF O-126 O-202 T0-220 2SC1398A 2SB1573 2SD2407 O-220F T0220F T0220 2SC5224 2SA1949 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951