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Samsung Semiconductor 2SC1983 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1983		296			1 $3.5 10 $3.5 100 $3.5 1000 $1.1375 10000 $1.1375	Buy Now
Sanken Electric Co Ltd 2SC1983 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220
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Quest Components	2SC1983		152			1 $4.5 10 $2.25 100 $1.95 1000 $1.95 10000 $1.95	Buy Now
Sanken Electric Co Ltd 2SC1984 TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-220
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Quest Components	2SC1984		7			1 $6.75 10 $3.375 100 $3.375 1000 $3.375 10000 $3.375	Buy Now

2SC198 Datasheets (131)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC198	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC198	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC198	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC198	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC198	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC198	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC198	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC1980	Panasonic	Silicon NPN epitaxial planer type transistor	Original	PDF
2SC1980	Panasonic	Silicon NPN epitaxial planer type	Original	PDF
2SC1980	Panasonic	NPN Transistor	Original	PDF
2SC1980	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC1980	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC1980	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC1980	Unknown	The Japanese Transistor Manual 1981	Scan	PDF

2SC1980	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC1980	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC1980	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC1980	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC1980	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC1980	Unknown	Cross Reference Datasheet	Scan	PDF

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2SC198 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SA771 Abstract: 2SA770 2SA7 2SC1985 Text: Inchange Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 2SA771 2SA7 2SC1985	PDF
2SC1986 Abstract: 2SC1985 Text: Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SC1985 2SC1986 O-220 2SA770/771 2SC1985 2SC1986	PDF
2SA771 Abstract: 2SA770 Text: JMnic Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1985/1986 ・Low collector saturation voltage APPLICATIONS ・For general and industrial purpose applications PINNING PIN DESCRIPTION	Original	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 2SA771	PDF
2SC1980 Abstract: TRANSISTOR 2SC1980 2SA921 Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	2SC1980 2SA921 2SC1980 TRANSISTOR 2SC1980 2SA921	PDF
2SC1986 Abstract: 2SC1985 Text: SavantIC Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SC1985 2SC1986 O-220 2SA770/771 2SC1985 2SC1986	PDF
2SC1986 Abstract: 2SA771 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA771 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -80(V)(Min.) ·Complement to Type 2SC1986 APPLICATIONS ·Designed for audio and general purpose applications.	Original	2SA771 2SC1986 -25mA; 2SC1986 2SA771	PDF
2SC1983 Abstract: 2sc1983 transistor SC-65 Text: 2SC1983 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25℃)	Original	2SC1983 SC-65 2SC1983 2sc1983 transistor SC-65	PDF
Untitled Abstract: No abstract text available Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA770 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo= -60(V)(Min.) PIN 1. BASE • Complement to Type 2SC1985	Original	2SA770 2SC1985 O-220C -25mA;	PDF
2SA0921 Abstract: 2SC1980 Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open)	Original	2SC1980 2SA0921 2SA0921 2SC1980	PDF
2SA921 Abstract: 2SC1980 2SA0921 2SC198 Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2	Original	2SA0921 2SA921) 2SC1980 2SA921 2SC1980 2SA0921 2SC198	PDF
2SA0921 Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980 Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)	Original	2SC1980 2SA0921 2SA921) 2SA0921 2SA921 2SC1980 TRANSISTOR 2sc1980	PDF
Untitled Abstract: No abstract text available Text: 2SC1986 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC1986 Freq10M	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 M Di ain	Original	2SC1980 2SA0921	PDF
2SA0921 Abstract: 2SA921 2SC1980 Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)	Original	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980	PDF

2SA770 Abstract: 2SC1985 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA770 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -60(V)(Min.) ·Complement to Type 2SC1985 APPLICATIONS ·Designed for audio and general purpose applications.	Original	2SA770 2SC1985 -25mA; 2SA770 2SC1985	PDF
2SA921 Abstract: 2SA92 2SC1980 2SC198 Text: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	2SA921 2SC1980 2SA921 2SA92 2SC1980 2SC198	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi	Original	2SA0921 2SA921) 2SC1980	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2	Original	2SA0921 2SA921) 2SC1980	PDF
2SC1983 Abstract: No abstract text available Text: 2SC1983 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC1983 Freq15M	PDF
Untitled Abstract: No abstract text available Text: 2SC1988 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12è V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)	Original	2SC1988	PDF
2SA0921 Abstract: 2SA921 2SC1980 Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage	Original	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980	PDF
2SA771 Abstract: 2SA770 Text: SavantIC Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 CollectSA771 2SA771	PDF
25X2 Abstract: 2SA770 2SA771 w506 Text: AOK AOK Semiconductor Product Specification 2SA770 2SA771 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complément to type 2SC1985/1986 • Low collector saturation voltage APPLICATIONS - /♦. i F o r g e n e ra l and in d u stria l	OCR Scan	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA771 25X2 w506	PDF
2SC1986 Abstract: No abstract text available Text: SANKEN ELECTRIC CO LT» 1 m 7 ^ 0 7 4 1 0DÜGSÖS 3SE D ^ S A K J "ESò-l^l Silicon PNP Epitaxial Planar ☆ Complement to types 2SC1985 thru 2SC1986 Application Exampfe : • Outline Drawing 1 •••■MT-25 TO220 • Test Circuit. . -■•	OCR Scan	2SC1985 2SC1986 MT-25 -25mA 2SA770 2SA771 60min 2SA771 80min 10typ 2SC1986	PDF

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2SC198 Datasheets (131)

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