Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    80MIN Search Results

    SF Impression Pixel

    80MIN Price and Stock

    Panasonic Electronic Components 6TCE680MI

    Tantalum Capacitors - Polymer 6.3VDC 680uF 18m POSCAP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 6TCE680MI Reel 8,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.09
    		Buy Now

    Toshiba America Electronic Components TLP280 MINIFLAT

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ameya Holding Limited TLP280 MINIFLAT 114
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Fibocom Wireless Inc L718-CN-80-MINIPCIE-10-00

    4G/LTE EMBEDDED CELLULAR MODULE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD L718-CN-80-MINIPCIE-10-00 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    InvenSense Inc IAM-20380MINI

    Gyroscope Triple 25050010002000s 171V to 36V 16Pin LGA TR (Alt: IAM-20380MINI)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus IAM-20380MINI 17 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    InvenSense Inc ICS-40180MINI

    Mic OmniDirectional 350 Ohm 38dBV 363V Rectangular Solder Pad TR (Alt: ICS-40180MINI)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus ICS-40180MINI 143 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more 80MIN price and stock on Findchips.com

    80MIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD-16A

    Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
    Text: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min


    Original     		SDC09 10max 15max 80min SMD-16A SMD-16A SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array PDF

    2SD2014

    Abstract: 2SB1257 FM20
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 2SD2014 2SB1257 FM20 PDF

    2SC3852A

    Abstract: 2sc3852 FM20 transistor 2sc3852
    Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A


    Original     		2SC3852/3852A 100max 60min 80min 500min 15typ 50typ 10max 2SC3852A 2SC3852 2SC3852A 2sc3852 FM20 transistor 2sc3852 PDF

    2SC4466

    Abstract: 2SA1693
    Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		2SC4466 2SA1693) 10max 80min 50min 20typ 110typ to100) to140) 2SC4466 2SA1693 PDF

    2SC3851

    Abstract: 2SC3851A FM20
    Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB


    Original     		2SC3851/3851A 2SA1488/A) 100max 60min 80min to320 15typ 60typ 2SC3851 2SC3851A FM20 PDF

    TMS1000

    Abstract: No abstract text available
    Text: 2SC4512 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1726 Conditions Ratings Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A


    Original     		2SC4512 2SA1726) 10max 80min 50min 20typ 110typ MT-25 to100) TMS1000 PDF

    2SD2014

    Abstract: 2SB1257 FM20 S8010
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 150x150x2 2SD2014 2SB1257 FM20 S8010 PDF

    TRANSISTOR SMD 1a 9

    Abstract: SDC09 smd transistor 142 SMD-16A
    Text: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min


    Original     		SDC09 10max 15max 80min SMD-16A TRANSISTOR SMD 1a 9 SDC09 smd transistor 142 SMD-16A PDF

    2SC5099

    Abstract: 2SA1907 DSA0016511
    Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		2SC5099 2SA1907) FM100 10max 80min 50min 20typ 110typ 2SC5099 2SA1907 DSA0016511 PDF

    2SC4511

    Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
    Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		2SC4511 2SA1725) 10max 80min 50min 20typ 110typ to100) to140) 2SC4511 TRANSISTOR C-111 2SA1725 FM20 DSA0016510 PDF

    TRANSISTOR C-111

    Abstract: 2SA1726 2SC4512
    Text: 2SC4512 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1726 Conditions 2SC4512 Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A


    Original     		2SC4512 2SA1726) MT-25 10max 80min 50min 20typ 110typ to100) TRANSISTOR C-111 2SA1726 2SC4512 PDF

    2SA1907

    Abstract: 2SC5099
    Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		2SC5099 2SA1907) FM100 10max 80min 50min 20typ 2SA1907 2SC5099 PDF

    2SC4466

    Abstract: 2sa1693
    Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		2SC4466 2SA1693) 10max 80min 50min 20typ 110typ to100) to140) 2SC4466 2sa1693 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Array STA461C External Dimensions STA4 LF400B ±0.2 25.25 V V mJ ±0.2 b 9.0 ±0.2 (Ta=25ºC) Unit µA µA V ±0.2 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min 2.3 Test Conditions VCB = 60V


    Original     		STA461C LF400B) 10max 15max 80min PDF

    2SC3851

    Abstract: 2SC3851A FM20 DSA0016507
    Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB


    Original     		2SC3851/3851A 2SA1488/A) 100max 60min 80min to320 15typ 60typ O220F) 2SC3851 2SC3851A FM20 DSA0016507 PDF

    2SC4511

    Abstract: 2SA1725 FM20
    Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		2SC4511 2SA1725) 10max 80min 50min 20typ 110typ to100) to140) 2SC4511 2SA1725 FM20 PDF

    Untitled

    Abstract: No abstract text available
    Text: SS6781A Battery Charger Controller FEATURES DESCRIPTION Fast charge control of NiMH/NiCd batteries, even with a fluctuating charging current. Fast charge termination by: ∆T/∆t, -∆V, 0∆V, safety timer, maximum temperature or maximum voltage. Linearly adjustable ∆T/∆t detection slope and


    Original     		SS6781A SO-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.


    Original     		R2A20057BM R03DS0069EJ0100 R2A20057BM TH05-3H103F NCP15WF104F03RC R03DS0069EJ0100 PDF

    matsua lt48 digital quartz timer

    Abstract: Matsushita lt48 timer Matsua lt48 timer matsushita lt48 digital quartz timer Matsua timer PM48 Matsushita timer PM48 LT48 digital quartz timer AT8-DF8K Matsushita lt48w twin timer lc48
    Text: ’06–’07 Timers/Time Switches/Counters/Hour Meters Timers/Time Switches/Counters/Hour Meters ’06–’07 Please contact . Matsushita Electric Works, Ltd. Automation Controls Business Unit Head Office: 1048, Kadoma, Kadoma-shi, Osaka 571-8686, Japan


    Original     		ARCT1B274E 200610-3YT ARCT1B274E matsua lt48 digital quartz timer Matsushita lt48 timer Matsua lt48 timer matsushita lt48 digital quartz timer Matsua timer PM48 Matsushita timer PM48 LT48 digital quartz timer AT8-DF8K Matsushita lt48w twin timer lc48 PDF

    lf817

    Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
    Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V


    Original     		SLA8004 100max 60max 60min 150min 35max 55min 80min lf817 pnp 8 transistor array pnp array SLA8004 1/stv 9902 PDF

    MN638S

    Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		infringement0718 H1-C01EC0-0110015TA MN638S STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M PDF

    Untitled

    Abstract: No abstract text available
    Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8


    OCR Scan     		2N3008 2N3012 2N3014 2N3019 2N3020 80min 30min 5/30m 4/30m 2N3036 PDF

    7443003

    Abstract: No abstract text available
    Text: CD-R O PERATIN G PLAY TEM P. —25~+70°C O PERATIN G (REC O RD ) TEM P. -5~+55°C '. . IF É ^ r u p ié ' 1 f è ìl~ 2 4 f t Ä Ì T ' X - A - 7 ' f K U > v I B i l ì S J t f t j f c "Super wide range" design assure of writing at all speed (1x to 24x)


    OCR Scan     		10OOBtffiiU 106KPa 60g/m3 5--30g/m3 30g/m3 7443003 PDF

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


    OCR Scan     		PDF