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Panasonic Electronic Components 2SC536300L TRANS NPN 6V 0.03A SSMINI3
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DigiKey	2SC536300L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2SC536KE-NP NPN SILICON TRANSISTOR
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DigiKey	2SC536KE-NP	Bulk			11,539	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2SC536KF-NP NPN SILICON TRANSISTOR
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DigiKey	2SC536KF-NP	Bulk			6,662	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Rochester Electronics LLC 2SC536KF-NP-AA NPN SILICON TRANSISTOR
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DigiKey	2SC536KF-NP-AA	Bulk			11,539	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2SC536KE-NP-AA SMALL SIGNAL NPN SILICON
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DigiKey	2SC536KE-NP-AA	Bulk			1,567	1 - 10 - 100 - 1000 - 10000 $0.19	Buy Now

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2SC536 Datasheets (92)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC536	Jiangsu Changjiang Electronics Technology	TO-92 Plastic Encapsulate Transistors	Original	PDF
2SC536	Various Russian Datasheets	Transistor	Original	PDF
2SC536	WEJ Electronic	TRANSISTOR (NPN)	Original	PDF
2SC536	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
2SC536	Continental Device India	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92	Scan	PDF
2SC536	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC536	Micro Electronics	Low Level and General Purpose Transistors	Scan	PDF
2SC536	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
2SC536	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC536	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC536	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC536	Unknown	Vintage Transistor Datasheets	Scan	PDF
2SC536	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC536	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SC536	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC536	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SC536	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC536	Unknown	Cross Reference Datasheet	Scan	PDF
2SC536	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC536	Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples	Scan	PDF

2SC536 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2sc536 Abstract: transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2sc536 transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR	PDF
2SC5369 Abstract: MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION in mm • High f T 2.1±0.1 14 GHz TYP. 1.25±0.1 • High gain 0.2 –0 6 4 5 1 2 3 • 6-pin small mini mold package	Original	2SC5369 2SC5369 MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117	PDF
2SC5363 Abstract: SC-75 Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)	Original	2SC5363 2SC5363 SC-75	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)	Original	2SC5363	PDF
2sc536 Abstract: 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536 Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2sc536 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536	PDF
2sc536 Abstract: 2sc536 noise figure 2SC536 transistor transistor 2sC536 Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2sc536 2sc536 noise figure 2SC536 transistor transistor 2sC536	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC536 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	2SC536	PDF
transistor npn C536 Abstract: No abstract text available Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V	Original	2SC5361 2-10S1A transistor npn C536	PDF
2SC5363J Abstract: 2SC536 Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency ampliﬁcation 1.00±0.05 • Features 0.50 (0.50) Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)	Original	2SC5363J 2SC5363J 2SC536	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency ampliﬁcation 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)	Original	2SC5363J 25unting	PDF
2SA60 Abstract: 2SA608N 2SC536N IT00504 IT00498 2SC536 Text: Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Capable of being used in the low frequency to high frequency range. unit:mm 2164 [2SA608N/2SC536N]	Original	ENN6324 2SA608N/2SC536N 2SA608N/2SC536N] 2SA608N 2SA60 2SA608N 2SC536N IT00504 IT00498 2SC536	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC536S TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	O-92S 2SC536S 100MHz	PDF
c5368 Abstract: transistor npn C536 2SC5368 Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V	Original	2SC5368 c5368 transistor npn C536 2SC5368	PDF
transistor npn C536 Abstract: C5361 2SC5361 Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V	Original	2SC5361 transistor npn C536 C5361 2SC5361	PDF

NEC 2561 LE 401 Abstract: la 7433 ltg 0351 6605 SP LTG 0222 Ic fr 9888 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AM PLIFICATION FEATURES PACKAGE DIMENSION in mm • High f j 2.1 ±0.1 14 G H z TYP. 1.25+0.1 • High gain * -► 1 1 6 , 5 A X 1	OCR Scan	2SC5369 NEC 2561 LE 401 la 7433 ltg 0351 6605 SP LTG 0222 Ic fr 9888	PDF
Ic fr 9888 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AMPLIFICATION PACKAGE DIMENSION in mm FEATURES • H ig h fT 2 . 1± 0.1 14 G H z T Y P . • H ig h gain \| S 2i e \| 2 = 1 4 d B T Y P . o o @ f = 2 GHz, V	OCR Scan	2SC5369 Ic fr 9888	PDF
2SC5361 Abstract: No abstract text available Text: TO SH IBA 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS Unit in mm 1 0 .3 M A X . 1.32 • Excellent Switching Times : tf = 0.5 jus Max. (l£ = 1.2 A)	OCR Scan	2SC5361 2SC5361	PDF
2SC5361 Abstract: No abstract text available Text: TOSHIBA 2SC5361 2SC5361 TO S H IB A TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS HIGH V O LTAG E SW ITCHING APPLICATIO NS 10.3MAX. DC-DC CONVERTER APPLICATIO NS • • • 1.32 Excellent Switching Times : tf = 0.5 /¿s Max. (l£ = 1.2 A)	OCR Scan	2SC5361 2SC5361	PDF
2SC5360 Abstract: 5360 Text: TO SH IBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency = 300V Cob = 5.0pF Typ. fT = 100MHz (Typ.) V CE O MAXIMUM RATINGS (Tc = 25°C)	OCR Scan	2SC5360 2SC5360 5360	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. (Iq = 1.2 A)	OCR Scan	2SC5361	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency VCEO=300V Cob = 5.0pF Typ. fT =100MHz (Typ.) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5360 100MHz	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS U n it in mm 10 ±0.3 • High Voltage ^3.2 ±0.2 2.71Q.2 : VCEO = 300V • Sm all Collector Output Capacitance : Cob = 5.0pF Typ. • High Transition Frequency	OCR Scan	2SC5360 100MHz	PDF
2SC5361 Abstract: No abstract text available Text: TOSHIBA 2SC5361 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX. DC-DC CONVERTER APPLICATIONS • • • 1.32 Excellent Switching Times : tf = 0.5 /us Max. (l£ = 1.2 A)	OCR Scan	2SC5361	PDF
2SC5368 Abstract: No abstract text available Text: TOSHIBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS ¿3.1 ±0.1 5.8 DC-DC CONVERTER APPLICATIONS ÏHigh Speed : tr = 0.5/^s (Max. , tf=0.3/*s (Max.) (IC = 0.8A)	OCR Scan	2SC5368 100ms 2SC5368	PDF

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Panasonic Electronic Components 2SC536300L

Rochester Electronics LLC 2SC536KE-NP

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Rochester Electronics LLC 2SC536KE-NP-AA

2SC536 Datasheets (92)

2SC536 Datasheets Context Search

2sc536

2SC5369

2SC5363

Untitled

2sc536

2sc536

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transistor npn C536

2SC5363J

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2SA60

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c5368

transistor npn C536

NEC 2561 LE 401

Ic fr 9888

2SC5361

2SC5361

2SC5360

Untitled

Untitled

Untitled

2SC5361

2SC5368