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Panasonic Electronic Components 2SC536300L TRANS NPN 6V 0.03A SSMINI3
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2SC5363 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC5363		Panasonic	Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)		Original	PDF
2SC5363		Panasonic	Silicon NPN Epitaxial Planar Type Transistor		Original	PDF
2SC5363		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF
2SC536300L		Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 6VCEO 30MA SS-MINI 3P		Original	PDF
2SC5363J		Panasonic	Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others		Original	PDF
2SC5363(Tentative)		Panasonic	Silicon NPN epitaxial planer type		Original	PDF
2SC5363(Tentative)		Panasonic	NPN Transistor		Original	PDF

2SC5363 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC5363 Abstract: SC-75 Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)	Original	2SC5363 2SC5363 SC-75	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)	Original	2SC5363	PDF
2SC5363J Abstract: 2SC536 Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency ampliﬁcation 1.00±0.05 • Features 0.50 (0.50) Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)	Original	2SC5363J 2SC5363J 2SC536	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency ampliﬁcation 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)	Original	2SC5363J 25unting	PDF
2SC5363 Abstract: transistor frequency 1.5GHz gain 20 dB Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment	Original	2SC5363 transistor frequency 1.5GHz gain 20 dB	PDF
Untitled Abstract: No abstract text available Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)	Original	2SC5363	PDF
2SC5363 Abstract: SC-75 Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features Emitter-base voltage Collector open Collector current Collector power dissipation	Original	2SC5363 2SC5363 SC-75	PDF
2SC5363 Abstract: No abstract text available Text: Transistor 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 1˚ 2 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V Collector to emitter voltage	Original	2SC5363 2SC5363	PDF
2SC5363 Abstract: No abstract text available Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment	Original	2SC5363	PDF
2SC5363J Abstract: No abstract text available Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency ampliﬁcation 1.00±0.05 • Features Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)	Original	2SC5363J 125ms 2SC5363J	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF

2SA1323 Abstract: 2SC4716 2SA838 2SC5020 2sc2851 Text: Transistors Selection Guide by Applications and Functions # High Speed Switch, V C O and High Frequency Equipment Package (No.) Application Functions VcEO lc (mA) V C ES SS-Mini Type (D1) High speed switch VCO and high freq. equipment S-Mini Type(D5) Mini Type (D12)	OCR Scan	2SA1806 2SC4691 2SA1739 2SC3938 2SC4755 2SC5379 2SC5378 2SA1738 2SC3757 2SC4782 2SA1323 2SC4716 2SA838 2SC5020 2sc2851	PDF