2SA2161J
Abstract: 2SC6037J
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)
|
Original
|
2002/95/EC)
2SC6037J
2SA2161J
2SA2161J
2SC6037J
|
PDF
|
2SA2161J
Abstract: 2SC6037J 2SA21
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)
|
Original
|
2002/95/EC)
2SC6037J
2SA2161J
2SA2161J
2SC6037J
2SA21
|
PDF
|
SC-89 JEDEC
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)
|
Original
|
2002/95/EC)
2SA2161J
2SC6037J
SC-89 JEDEC
|
PDF
|
2SC603
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features VCEO Emitter-base voltage (Collector open) VEBO Collector current
|
Original
|
2002/95/EC)
2SC6037J
2SA2161J
2SC603
|
PDF
|
2SA21
Abstract: 2SA2161J 2SC6037J 2SC603
Text: Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open) VCEO 12 V Emitter-base voltage (Collector open)
|
Original
|
2SC6037J
2SA2161J
2SA21
2SA2161J
2SC6037J
2SC603
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/
|
Original
|
2002/95/EC)
2SA2161J
2SC6037J
|
PDF
|
2SA2161J
Abstract: SOT-490 2SC6037J SC-89 2SA2161
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/
|
Original
|
2002/95/EC)
2SA2161J
2SC6037J
SC-89,
OT-490
2SA2161J
SOT-490
2SC6037J
SC-89
2SA2161
|
PDF
|
2SA2161J
Abstract: 2SC6037J SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/
|
Original
|
2002/95/EC)
2SA2161J
2SC6037J
SC-89,
OT-490
2SA2161J
2SC6037J
SC-89
|
PDF
|
marking 2U 40 diode
Abstract: marking 2U 20 diode 2SA2161J 2SC6037J SC-89 SC-89 JEDEC
Text: Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating
|
Original
|
2SA2161J
2SC6037J
marking 2U 40 diode
marking 2U 20 diode
2SA2161J
2SC6037J
SC-89
SC-89 JEDEC
|
PDF
|
2SA2161J
Abstract: 2SC6037J
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)
|
Original
|
2002/95/EC)
2SC6037J
2SA2161J
2SA2161J
2SC6037J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For low-frequency amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C Parameter Symbol
|
Original
|
2SA2161J
2SC6037J
|
PDF
|
2SC603
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)
|
Original
|
2002/95/EC)
2SC6037J
2SA2161J
2SC603
|
PDF
|
2SA2161J
Abstract: 2SC6037J SC-89 2SC603 SC-89 JEDEC
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)
|
Original
|
2002/95/EC)
2SA2161J
2SC6037J
2SA2161J
2SC6037J
SC-89
2SC603
SC-89 JEDEC
|
PDF
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
PDF
|
|
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
PDF
|
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
|
Original
|
P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
|
PDF
|
2SC603
Abstract: 2SC6037J
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04532G Silicon NPN epitaxial planar type For general amplification • Package Low collector-emitter saturation voltage VCE(sat) Reduction of the mounting area and assembly cost by one half
|
Original
|
2002/95/EC)
UP04532G
2SC6037J
2SC603
2SC6037J
|
PDF
|
2SC6037J
Abstract: 2SA2161G 2SC6037G 2SC603
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
2002/95/EC)
2SC6037G
2SA2161G
2SC6037J
2SA2161G
2SC6037G
2SC603
|
PDF
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
2002/95/EC)
2SC6037G
2SA2161G
|
PDF
|
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
|
Original
|
AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
|
PDF
|
mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Features Package Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
2002/95/EC)
2SC6037G
2SA2161G
|
PDF
|
2SA2161G
Abstract: 2SC6037J 2sc6037g 2SA21
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
2002/95/EC)
2SC6037G
2SA2161G
2SA2161G
2SC6037J
2sc6037g
2SA21
|
PDF
|
