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    Panasonic Electronic Components 2SA2161J0L

    TRANS PNP 12V 0.5A SSMINI3-F1
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    2SA2161 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA2161G0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 12VCEO 500MA SSMINI3P Original PDF
    2SA2161J Panasonic Transistor for general amplification. Complementary to 2SC6037J Original PDF
    2SA2161J0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 12VCEO 500MA SSMINI3P Original PDF

    2SA2161 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA2161J

    Abstract: 2SC6037J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J PDF

    2SA2161J

    Abstract: 2SC6037J 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J 2SA21 PDF

    SC-89 JEDEC

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)


    Original     		2002/95/EC) 2SA2161J 2SC6037J SC-89 JEDEC PDF

    2SC6037J

    Abstract: 2SA2161G 2SC6037G 2SC603
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC6037G 2SA2161G 2SC6037J 2SA2161G 2SC6037G 2SC603 PDF

    2SC603

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features VCEO Emitter-base voltage (Collector open) VEBO Collector current


    Original     		2002/95/EC) 2SC6037J 2SA2161J 2SC603 PDF

    2SA21

    Abstract: 2SA2161J 2SC6037J 2SC603
    Text: Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open) VCEO 12 V Emitter-base voltage (Collector open)


    Original     		2SC6037J 2SA2161J 2SA21 2SA2161J 2SC6037J 2SC603 PDF

    2SA2161G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6037G • Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and


    Original     		2002/95/EC) 2SA2161G 2SC6037G 2SA2161G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/


    Original     		2002/95/EC) 2SA2161J 2SC6037J PDF

    2SA2161J

    Abstract: SOT-490 2SC6037J SC-89 2SA2161
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/


    Original     		2002/95/EC) 2SA2161J 2SC6037J SC-89, OT-490 2SA2161J SOT-490 2SC6037J SC-89 2SA2161 PDF

    2SA2161J

    Abstract: 2SC6037J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/


    Original     		2002/95/EC) 2SA2161J 2SC6037J SC-89, OT-490 2SA2161J 2SC6037J SC-89 PDF

    marking 2U 40 diode

    Abstract: marking 2U 20 diode 2SA2161J 2SC6037J SC-89 SC-89 JEDEC
    Text: Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating


    Original     		2SA2161J 2SC6037J marking 2U 40 diode marking 2U 20 diode 2SA2161J 2SC6037J SC-89 SC-89 JEDEC PDF

    2SA2161J

    Abstract: 2SC6037J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6037G • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and


    Original     		2002/95/EC) 2SA2161G 2SC6037G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC6037G 2SA2161G PDF

    2SA2161G

    Abstract: marking 2U 40 diode 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SC6037G • Features ue pl d in an c se ed lud pl vi an m m es


    Original     		2002/95/EC) 2SA2161G 2SC6037G 2SA2161G marking 2U 40 diode 2SA21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For low-frequency amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C Parameter Symbol


    Original     		2SA2161J 2SC6037J PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Features  Package  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC6037G 2SA2161G PDF

    2SC603

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SC6037J 2SA2161J 2SC603 PDF

    2SA2161J

    Abstract: 2SC6037J SC-89 2SC603 SC-89 JEDEC
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)


    Original     		2002/95/EC) 2SA2161J 2SC6037J 2SA2161J 2SC6037J SC-89 2SC603 SC-89 JEDEC PDF

    2SA2161G

    Abstract: 2SC6037J 2sc6037g 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC6037G 2SA2161G 2SA2161G 2SC6037J 2sc6037g 2SA21 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF