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    Panduit Corp 2SD814A-R TX

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    Bristol Electronics 2SD814A-R TX 42,000
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    Panasonic Electronic Components 2SD814-ARL

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    Bristol Electronics 2SD814-ARL 1,500
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    2SD814A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD814A Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SD814A Panasonic Transistor for high breakdown voltage low-frequency and low-noise amplification Original PDF
    2SD814A Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD814A) Panasonic NPN Transistor Original PDF
    2SD814A TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-23 Original PDF
    2SD814A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD814A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD814A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD814A Panasonic Si NPN epiaxial planar. High voltage AF low-noise amplifier. Scan PDF

    2SD814A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)


    Original     		2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2


    Original     		2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814A PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)


    Original     		2SD0814, 2SD0814A 2SD814, 2SD814A) PDF

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2 1 (0.95) (0.95)


    Original     		2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A PDF

    2SD0814

    Abstract: 2SD0814A 2SD814 2SD814A
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD0814 base voltage 2SD0814A Collector to 2SD0814 1.45 0.95 0.95 +0.1


    Original     		2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814 2SD0814A 2SD814 2SD814A PDF

    2SD814

    Abstract: 2SD814A
    Text: Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current


    Original     		2SD814, 2SD814A 2SD814 2SD814 2SD814A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Rating Unit VCBO


    Original     		2002/95/EC) 2SD0814A 2SD814A) PDF

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05


    Original     		2002/95/EC) 2SD0814A 2SD814A) SC-59 2SD0814A 2SD814A PDF

    2SD0814A

    Abstract: 2SD814A
    Text: Transistor 2SD0814A 2SD814A Silicon NPN epitaxial planar type Unit: mm For high breakdown voltage low-frequency and low-noise amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector to emitter voltage VCEO


    Original     		2SD0814A 2SD814A) 2SD0814A 2SD814A PDF

    2SD0814A

    Abstract: 2SD814A
    Text: Transistors 2SD0814A 2SD814A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO


    Original     		2SD0814A 2SD814A) 2SD0814A 2SD814A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)


    Original     		2002/95/EC) 2SD0814A 2SD814A) PDF

    matsushita Transistor hFE CLASSIFICATION Marking

    Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings


    Original     		2SD0814, 2SD0814A 2SD814, 2SD814A) matsushita Transistor hFE CLASSIFICATION Marking IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SD814

    Abstract: 2SD814A marking LQ
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		2SD814 2SD814A OT-23 2SD814 2SD814A marking LQ PDF

    2SD883A

    Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150


    Original     		2SD801 2SD802 2SD803 2SD804 70kHz 2SD805 2SD806 2SD807 2SD808 2SD809 2SD883A 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815 PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF

    2SD836

    Abstract: 2SB750 Y7W MARKING 2SD836A 2SD814A j2540 MARKING Y7W 2SB750A 2SD813 2SD814
    Text: PANASONIC INDL/ELEKiSEMI} 72C D I h^EflSM □□□T403 n • W ~ I T -2 -J -/S ;_ 2 S D 8 1 3 h 2SD813 '> ij N P N x tf £ =£■'> T7 ^U"70U — N P N Epitaxial Planar Output Amplifier ■ 1# ^ / F e a t u r e s


    OCR Scan     		2SD813 14/Electrical 2SD836 2SB750 Y7W MARKING 2SD836A 2SD814A j2540 MARKING Y7W 2SB750A 2SD813 2SD814 PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


    OCR Scan     		MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107 PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    2SD818

    Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
    Text: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40


    OCR Scan     		2SD811 2SD812 2SD813 2SD814 2SD814A 2SD818 2SD819 2SD841 zmw42 2SB753 2SD818 2SD844 fst 240 2sb764 2SD859 2SD813 2SD814 2SD814A PDF

    2SB667

    Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
    Text: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 — MN15621 MN110 MN1101 — MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 — MN1200 - MN1441 MN1201 — MN1202 - MN1204


    OCR Scan     		MN14T6 MN1418 MN1420 MN1421 MN1425 MN1427 MN1441 MN1442 MN1432 MN1450B 2SB667 MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404 PDF