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Panasonic Electronic Components ERG-2SJ201 RES 200 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ201	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ201V RES 200 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ201V	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ201A RES 200 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ201A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ERG-2SJ201A	Bulk			6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
MAT ERG2SJ201A
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Bristol Electronics	ERG2SJ201A		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SJ201 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ201	Toshiba	TRANS MOSFET P-CH 200V 12A 3(2-21F1B)	Original	PDF
2SJ201	Toshiba	Pch Power MOSFET; ; Package: TO-3P(L); R DS On (max 0.625); I_S (A): (max -12)	Original	PDF
2SJ201	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ201	Toshiba		Original	PDF
2SJ201	Unknown	FET Data Book	Scan	PDF
2SJ201	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ201	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ201	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ201	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ201	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF
2SJ201O	Toshiba	Silicon P-Channel MOS Type	Original	PDF
2SJ201-O	Toshiba	2SJ201 - TRANSISTOR 12 A, 200 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ201Y	Toshiba	TRANS MOSFET P-CH 200V 12A 3(2-21F1B)	Original	PDF
2SJ201-Y	Toshiba	2SJ201 - TRANSISTOR 12 A, 200 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power	Original	PDF

2SJ201-Y(F)	Toshiba	2SJ201 - MOSFETs MOSFET P-Ch 200V 12A Rdson 0.625 Ohm	Original	PDF
2SJ201-YF	Toshiba	2SJ201 - Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-3PL	Original	PDF

2SJ201 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SJ201 Abstract: 2SK1530 toshiba pb includes Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes
Toshiba 2SJ Abstract: toshiba marking code transistor 2SK1530 toshiba Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba
2sk1530 Abstract: 2SJ201 Toshiba 2SJ Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2sk1530 2SJ201 Toshiba 2SJ
2SK1530 Abstract: 2SJ201 toshiba pb includes Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes
Untitled Abstract: No abstract text available Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2-21F1B
2SK1530 Abstract: 2SJ201 Toshiba 2SJ Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1530 2SJ201 2-21F1B 2SK1530 2SJ201 Toshiba 2SJ
toshiba pb includes Abstract: 2SJ201 2SK1530 Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2-21F1B toshiba pb includes 2SJ201 2SK1530
Toshiba 2SJ Abstract: No abstract text available Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)	Original	PDF	2SK1530 2SJ201 2-21F1B Toshiba 2SJ
Untitled Abstract: No abstract text available Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)	Original	PDF	2SJ201 2SK1530 2-21F1B
2SK1530 Abstract: 2SJ201 Text: 2SK1530 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : \|Yfs\| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。	Original	PDF	2SK1530 2SJ201 2-21F1B 2002/95/EC) 2SK1530 2SJ201
toshiba marking code transistor Abstract: 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2-21F1B toshiba marking code transistor 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook
2SJ20 Abstract: 2SK1530 2SJ201 Toshiba 2SJ Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1530 2SJ201 2-21F1B 2SJ20 2SK1530 2SJ201 Toshiba 2SJ
2SJ201 Abstract: 2SJ20 Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	PDF	2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	PDF	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode	OCR Scan	PDF	2SK1530 2SJ201
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	PDF	2SK1530 2SJ201 2SK1530·
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 1 SILICON N CHANNEL MOS TYPE 5 3 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : V]3gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	PDF	2SK1530 2SJ201
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : \|Yfg\| = 5.0S Typ. Complementary to 2SK1530	OCR Scan	PDF	2SJ201 20-5MAX. --200V 2SK1530
Untitled Abstract: No abstract text available Text: TOSHIBA Discrete Semiconductors 2SJ201 Field Effect Transistor U n it in m m Silicon P Channel MOSType L2-jt-MOS II High Power Amplifier Application F e a tu re s • High Breakdown Voltage - VDSS = -200V (Min.) • High Forward Transfer Admittance - \|Yfe I = 5.0S (Typ.)	OCR Scan	PDF	2SJ201 -200V 2SK1530
Untitled Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss 200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : \|Yfs \| 5.0S(TYP.) . Complementary to 2SJ201	OCR Scan	PDF	2SK1530 2SJ201 Tc-25
2Sj201 Abstract: 2SK1530 Text: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SK1530	OCR Scan	PDF	2SJ201 -200V 2SK1530 2Sj201
2SJ201 Abstract: 2SK1530 Text: TO S H IB A 2SJ201 TO SH IBA FIELD EFFECT TRANSISTOR SILICON P C H A N N EL M O S TYPE 2SJ201 HIGH PO W ER AM PLIFIER APPLICATION U n it in mm 2 0 .5 M A X . • H ig h Bre a k d o w n V o ltag e • H ig h F o rw a rd T ran sfer A d m ittan ce : \|Yfs\|= 5 .0 S Typ.	OCR Scan	PDF	2SJ201 2SK1530
2N3904 Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150 Text: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13	OCR Scan	PDF	2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ201 Field Effect T ra n sisto r S ilic o n P C h a n n el M O S Typ e L 2-ti-MOS II High Pow er A m p lifier A p p lica tio n F e a tu re s • High Breakdown Vortage - VDSS = -200V (Min.) • High Forward Transfer Admittance - Yfs' = 5.OS (Typ-)	OCR Scan	PDF	2SJ201 -200V 2SK1530

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2SJ201 Datasheets (16)

2SJ201 Datasheets Context Search

2SJ201

Toshiba 2SJ

2sk1530

2SK1530

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2SK1530

toshiba pb includes

Toshiba 2SJ

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2SK1530

toshiba marking code transistor

2SJ20

2SJ201

2SK1118

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2Sj201

2SJ201

2N3904

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