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    2SJ201 Price and Stock

    Panasonic Electronic Components ERG-2SJ201

    RES 200 OHM 5% 2W AXIAL
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    Panasonic Electronic Components ERG-2SJ201V

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    DigiKey ERG-2SJ201V Ammo Pack
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    Panasonic Electronic Components ERG-2SJ201A

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    Newark ERG-2SJ201A Bulk 6,000
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    MAT ERG2SJ201A

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    Bristol Electronics ERG2SJ201A 2,500
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    Panasonic Electronic Components ERG2SJ201V

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    NexGen Digital ERG2SJ201V 10,000
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    2SJ201 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ201 Toshiba TRANS MOSFET P-CH 200V 12A 3(2-21F1B) Original PDF
    2SJ201 Toshiba Pch Power MOSFET; ; Package: TO-3P(L); R DS On (max 0.625); I_S (A): (max -12) Original PDF
    2SJ201 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ201 Toshiba Original PDF
    2SJ201 Unknown FET Data Book Scan PDF
    2SJ201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ201 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ201 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ201 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ201 Toshiba Silicon P channel field effect transistor for high power amplifier applications Scan PDF
    2SJ201O Toshiba Silicon P-Channel MOS Type Original PDF
    2SJ201-O Toshiba 2SJ201 - TRANSISTOR 12 A, 200 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ201Y Toshiba TRANS MOSFET P-CH 200V 12A 3(2-21F1B) Original PDF
    2SJ201-Y Toshiba 2SJ201 - TRANSISTOR 12 A, 200 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ201-Y(F) Toshiba 2SJ201 - MOSFETs MOSFET P-Ch 200V 12A Rdson 0.625 Ohm Original PDF
    2SJ201-YF Toshiba 2SJ201 - Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-3PL Original PDF

    2SJ201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ201

    Abstract: 2SK1530 toshiba pb includes
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes

    Toshiba 2SJ

    Abstract: toshiba marking code transistor 2SK1530 toshiba
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba

    2sk1530

    Abstract: 2SJ201 Toshiba 2SJ
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2sk1530 2SJ201 Toshiba 2SJ

    2SK1530

    Abstract: 2SJ201 toshiba pb includes
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes

    Untitled

    Abstract: No abstract text available
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B

    2SK1530

    Abstract: 2SJ201 Toshiba 2SJ
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B 2SK1530 2SJ201 Toshiba 2SJ

    toshiba pb includes

    Abstract: 2SJ201 2SK1530
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B toshiba pb includes 2SJ201 2SK1530

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B

    2SK1530

    Abstract: 2SJ201
    Text: 2SK1530 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用 単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : |Yfs| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。


    Original     		PDF 2SK1530 2SJ201 2-21F1B 2002/95/EC) 2SK1530 2SJ201

    toshiba marking code transistor

    Abstract: 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B toshiba marking code transistor 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook

    2SJ20

    Abstract: 2SK1530 2SJ201 Toshiba 2SJ
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B 2SJ20 2SK1530 2SJ201 Toshiba 2SJ

    2SJ201

    Abstract: 2SJ20
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D


    OCR Scan     		PDF 2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode


    OCR Scan     		PDF 2SK1530 2SJ201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201


    OCR Scan     		PDF 2SK1530 2SJ201 2SK1530·

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 1 SILICON N CHANNEL MOS TYPE 5 3 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : V]3gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201


    OCR Scan     		PDF 2SK1530 2SJ201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : |Yfg| = 5.0S Typ. Complementary to 2SK1530


    OCR Scan     		PDF 2SJ201 20-5MAX. --200V 2SK1530

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ201 Field Effect Transistor U n it in m m Silicon P Channel MOSType L2-jt-MOS II High Power Amplifier Application F e a tu re s • High Breakdown Voltage - VDSS = -200V (Min.) • High Forward Transfer Admittance - |Yfe I = 5.0S (Typ.)


    OCR Scan     		PDF 2SJ201 -200V 2SK1530

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss *200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : |Yfs | *5.0S(TYP.) . Complementary to 2SJ201


    OCR Scan     		PDF 2SK1530 2SJ201 Tc-25

    2Sj201

    Abstract: 2SK1530
    Text: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SK1530


    OCR Scan     		PDF 2SJ201 -200V 2SK1530 2Sj201

    2SJ201

    Abstract: 2SK1530
    Text: TO S H IB A 2SJ201 TO SH IBA FIELD EFFECT TRANSISTOR SILICON P C H A N N EL M O S TYPE 2SJ201 HIGH PO W ER AM PLIFIER APPLICATION U n it in mm 2 0 .5 M A X . • H ig h Bre a k d o w n V o ltag e • H ig h F o rw a rd T ran sfer A d m ittan ce : |Yfs|= 5 .0 S Typ.


    OCR Scan     		PDF 2SJ201 2SK1530

    2N3904

    Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
    Text: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13


    OCR Scan     		PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ201 Field Effect T ra n sisto r S ilic o n P C h a n n el M O S Typ e L 2-ti-MOS II High Pow er A m p lifier A p p lica tio n F e a tu re s • High Breakdown Vortage - VDSS = -200V (Min.) • High Forward Transfer Admittance - Yfs' = 5.OS (Typ-)


    OCR Scan     		PDF 2SJ201 -200V 2SK1530