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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1
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2002/95/EC)
2SK0663
2SK663)
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2SK0663
Abstract: 2SK663
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in
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2002/95/EC)
2SK0663
2SK663)
2SK0663
2SK663
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Untitled
Abstract: No abstract text available
Text: 2SK663 Silicon Junction FETs Small Signal 2SK663 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 ● Downsizing of sets by S-mini type package and automatic insertion 0.3 -0 Low noise type
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2SK663
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2SK0663
Abstract: 2SK663
Text: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 VDSX 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage
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2SK0663
2SK663)
2SK0663
2SK663
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2SK0663
Abstract: 2SK663
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in
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2002/95/EC)
2SK0663
2SK663)
2SK0663
2SK663
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2SK663
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 3 2 Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55
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2SK663
2SK663
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 • Features
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2SK0663
2SK663)
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2SK0663
Abstract: 2SK663 2BR marking
Text: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching (0.425) unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 ● Low noise-figure (NF)
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2SK0663
2SK663)
2SK0663
2SK663
2BR marking
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2SK0663
Abstract: 2SK663
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO
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2002/95/EC)
2SK0663
2SK663)
2SK0663
2SK663
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package • Low noise figure NF
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2002/95/EC)
2SK0663
2SK663)
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2SK0663
Abstract: 2SK663
Text: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Low noise figure NF • High gate-drain voltage (source open) VGDO
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2SK0663
2SK663)
2SK0663
2SK663
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SK3585
Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)
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PUB4753
PU7457)
PUB4701
PUB4702
450/600o
380/680o
SIP10-A1
2SK0301
2SK663)
2SK301)
2SK3585
Infrared-Sensor
2SK3578
2SK3584
2SK3583
PUB4701
2SK1104
2SK1860
2SK3585 equivalent
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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3sk fet
Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Text: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663
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2SJ364
2SK123
2SK662
2SK663
2SK301
3sk fet
3SK192
K305A
3sk268 fet
2SK1860
2SK A 1103
2sk to-92
SJ163
2sk type
3sk301
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2SK653
Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s
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2SK648
2SK649
2SK650
2SK651
150ni
2SK652
2SK665
50MHz
2SK666
2SK765
2SK653
2SK671
Gv-80dB
2SK674
2SK669
2SK677
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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Untitled
Abstract: No abstract text available
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type
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2SJ0385
A2SK2380
2SK1103
2SJ364
2SJ163
2SK662
2SK198
2SK663
2SK374
2SK123
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3SK192
Abstract: 2SK651
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )
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2SK2380
2SJ0385
2SJ364
2SK662
2SK663
2SK1103
2SJ163
2SK198
2SK374
2SK123
3SK192
2SK651
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2sc4780
Abstract: A1531A 2SC4661 2SC4670 MA141K 2SC4239 2SD1819 R A745W
Text: —5/ S Mini Type 3-pin Package Outline Transistors, Diodes Unit : mm 2 1 ± 0.1 1.25 ± 0.3 0.425 m uw l S = - S ( 3 S i ) / N - 7 ^ - - v l i . S t # W 5 - S ( 3 i f f i i ) ^ 0y ^ - v £ i u 5 - ^ ( 3 « ^ ) ¿ lP lli< 7 ) 1 4 f ! li H I # L fc . h 7 > v '7 , i? .
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MA741
A741W
MA742
MA744
MA745
A745W
2sc4780
A1531A
2SC4661
2SC4670
MA141K
2SC4239
2SD1819
R A745W
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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