Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MA745 Search Results

    SF Impression Pixel

    MA745 Price and Stock

    NXP Semiconductors MMA7455LT

    ACCELEROMETER 2-8G I2C/SPI 14LGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMA7455LT Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC MMA7457LR1

    IC 3 AXIS DIGITAL OUTPUT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMA7457LR1 Bulk 121
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.49
    • 10000 $2.49
    		Buy Now

    NXP Semiconductors MMA7455LR1

    ACCELEROMETER 2-8G I2C/SPI 14LGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMA7455LR1 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors MMA7455LR2

    ACCELEROMETER 2-8G I2C/SPI 14LGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMA7455LR2 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors MMA7456LR1

    ACCELEROMETER 2-8G I2C/SPI 14LGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMA7456LR1 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.54584
    • 10000 $1.54584
    		Buy Now
    Find more MA745 price and stock on Findchips.com

    MA745 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA745 Panasonic Diode Original PDF
    MA745 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MA745 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    MA745WA Panasonic Diode Original PDF
    MA745WA Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA745WA Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MA745WA Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    MA745WK Panasonic Diode Original PDF
    MA745WK Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA745WK Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MA745WK Unknown The Diode Data Book with Package Outlines 1993 Scan PDF

    MA745 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA3J745E

    Abstract: MA745WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745E MA745WK) MA3J745E MA745WK

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF MA3J745D, MA3J745E MA745WA, MA745WK)

    104 M3D

    Abstract: MA3J745D MA3J745E MA745WA MA745WK
    Text: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC)


    Original     		PDF MA3J745D, MA3J745E MA745WA, MA745WK) MA3J745D MA3J745D: MA3J745E: 104 M3D MA3J745E MA745WA MA745WK

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745 MA745) MA3X704A MA704A)

    MA3J745

    Abstract: MA3X704A MA704A MA745
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745 MA745) MA3X704A MA704A) MA3J745 MA3X704A MA704A MA745

    MA3J745D

    Abstract: MA745WA
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745D MA745WA) MA3J745D MA745WA

    MA3J745

    Abstract: MA3X704A MA704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3J745 MA745) MA3X704A MA704A) MA3J745 MA3X704A MA704A MA745

    electronic power generator using transistor

    Abstract: Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short


    Original     		PDF MA3J745 MA745) MA3X704A MA704A) electronic power generator using transistor Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745E MA745WK)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching  Features • Package  Two elements are contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA3J745E MA745WK)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3J745 MA745) MA3X704A MA704A)

    MA3J745D

    Abstract: MA3J745E MA745WA MA745WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA), MA3J745E (MA745WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA3J745D MA745WA) MA3J745E MA745WK) MA3J745D: MA3J745E: MA3J745D MA3J745E MA745WA MA745WK

    104 M3D

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA745WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF, optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-


    Original     		PDF 2SK1606 MA745WK 104 M3D

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA745WA Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Fast reverse recovery time trr, optimum for high-frequency rectification +0.1 Low forward rise voltage V F, optimum for low-voltage rectification


    Original     		PDF 2SK1606 MA745WA SC-70

    MA3J745

    Abstract: MA3X704A MA704A MA745
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features


    Original     		PDF 2002/95/EC) MA3J745 MA745) MA3X704A MA704A) MA3J745 MA3X704A MA704A MA745

    MA3J745

    Abstract: MA3X704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short


    Original     		PDF MA3J745 MA745) MA3X704A) MA3J745 MA3X704A MA745

    MA3J745E

    Abstract: MA745WK
    Text: Schottky Barrier Diodes SBD MA3J745E (MA745WK) Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward


    Original     		PDF MA3J745E MA745WK) MA3J745E MA745WK

    MA3J745E

    Abstract: MA745WK SMini3-F1
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745E MA745WK) MA3J745E MA745WK SMini3-F1

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA745 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 (Low VF type of MA704A) Fast reverse recovery time trr, optimum for high-frequency rectifica- 1 3 2 +0.1 0.9±0.1 tion


    Original     		PDF 2SK1606 MA745 MA704A) SC-70

    MA3J745D

    Abstract: MA745WA
    Text: Schottky Barrier Diodes SBD MA3J745D (MA745WA) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short


    Original     		PDF MA3J745D MA745WA) SC-70 MA3J745D MA745WA

    diodes ir

    Abstract: diode 104 MA745WA MA3J745D MA3J745E MA745WK
    Text: Schottky Barrier Diodes SBD MA3J745D (MA745WA), MA3J745E (MA745WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF MA3J745D MA745WA) MA3J745E MA745WK) MA3J745D: MA3J745E: diodes ir diode 104 MA745WA MA3J745D MA3J745E MA745WK

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    D83 ZENER

    Abstract: zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220
    Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 MA5Z200 Ir max. (M ) 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 216 MA5Z300 1 MA5Z330 1 Type No. Zener Diodes V z min. typ. (V) (V) Sz typ. (m V /t) Vr max. (V) lz lz (mA) (mA) 0.31 0.1 0.1 190 200 220 0.31


    OCR Scan     		PDF MA5Z200 MA5Z220 MA5Z240 MA52270 MA5Z300 MA5Z330 MA6Z100WA MA6Z100WK MA700/A MA704/A D83 ZENER zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220

    kt 207

    Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
    Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT


    OCR Scan     		PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 81MIN 26MAX fiJ44 kt 207 ma741 MA723 420C 610C