2A 100V NPN Search Results

2A 100V NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

2A 100V NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated DXTN07100BP5 ADVANCE INFORMATION 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI 5 Features Mechanical Data • BVCEO > 100V • • IC = 2A High Continuous Collector Current • • ICM = 6A Peak Collector Current	Original	DXTN07100BP5 OT223; AEC-Q101 DS32023	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT493 100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 100V   IC = 1A High Continuous Collector Current  Case material: Molded Plastic. “Green” Molding Compound.  ICM = 2A Peak Pulse Current	Original	FMMT493 500mW J-STD-020 FMMT593 MILSTD-202, DS33093	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FCX593 100V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -100V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Collector Current • Low saturation voltage VCE sat < -200mV @ -250mA	Original	FCX593 -100V -200mV -250mA FCX493 AEC-Q101 J-STD-020 DS33063	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated Green FZT753 100V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •              BVCEO > -100V IC = -2A high Continuous Current ICM = -6A Peak Pulse Current	Original	FZT753 OT223 -100V -300mV FZT653 AEC-Q101 J-STD-020 DS33163	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current	Original	FMMT593 -100V FMMT493 AEC-Q101 J-STD-020 MIL-STD-202s, DS33106	PDF
2SA1709 Abstract: No abstract text available Text: Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709	Original	EN3096A 2SA1709/2SC4489 2SA1709 2SA1709	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENA0435A 2SC6099 Bipolar Transistor http://onsemi.com 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process	Original	ENA0435A 2SC6099 A0435-9/9	PDF
Untitled Abstract: No abstract text available Text: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity	Original	EN2511B 2SA1593/2SC4135 2SA1593/2SC4135-applied 2SA1593	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENA0434A 2SC6096 Bipolar Transistor 100V, 2A, Low VCE sat , NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage	Original	ENA0434A 2SC6096 A0434-6/6	PDF
Untitled Abstract: No abstract text available Text: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	Original	EN2006D 2SA1417/2SC3647 2SA1417 250mm2	PDF
TS16949 Abstract: ZXTN25020DFL ZXTN25020DFLTA ZXTP25020DFL MARKING 1A1 Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain	Original	ZXTN25020DFL 350mW ZXTP25020DFL TS16949 ZXTN25020DFL ZXTN25020DFLTA ZXTP25020DFL MARKING 1A1	PDF
Untitled Abstract: No abstract text available Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 65mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain	Original	ZXTN25020DFL 350mW ZXTP25020DFL ZXTN25020DFLTA	PDF
marking 1a1 Abstract: No abstract text available Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 65mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain	Original	ZXTN25020DFL 350mW ZXTP25020DFL ZXTN25020DFLTA marking 1a1	PDF
cb 237 Abstract: BD235 bd233 Text: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS	OCR Scan	O-126 BD233/235/237 BD233 BD235 BD237: -65TC 1501c BD233 B0235 BD237 cb 237 BD235	PDF

BUW50 Abstract: No abstract text available Text: BUW50 SILICON NPN SWITCHING TRANSISTOR • ■ ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION TURN-ON AND TURN-OFF TAIL SPECIFICATIONS TURN-ON dic/dt FOR BETTER RECTIFIER CHOICE	Original	BUW50 O-218 BUW50	PDF
t6753 Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725 Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage	Original	ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725	PDF
philips BDV64A Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO	OCR Scan	TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR	PDF
SC06960 Abstract: BUW50 Text: r Z 7 S G S -T H O M ^ 7# S O N r a œ m iw iiM B U W 50 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION . TURN-ON AND TURN-OFF TAIL SPECIFICATIONS . TURN-ON dic/dt FOR BETTER RECTIFIER	OCR Scan	BUW50 SC06960 00bS3S7 O-218 OT-93) 7T2TE37 GDbS35fi SC06960 BUW50	PDF
2A 40V NPN Abstract: 150v 3A pnp BSW68A bu326 Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz	Original	BSS71" BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B 10/30m 2A 40V NPN 150v 3A pnp BSW68A bu326	PDF
BUV50 Abstract: No abstract text available Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN	Original	BUV50 125oC BUV50	PDF
BUV50 Abstract: No abstract text available Text: BUV50 SILICON NPN TRANSISTOR n n n FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V V CEV Collector-Emitter Voltage V BE = -1.5V	Original	BUV50 BUV50	PDF
Untitled Abstract: No abstract text available Text: 2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec	Original	2N5338X 2N5339X 2N5338X 2N5339X 2N5339" 2N5339X-JQR-B 30MHz	PDF
BUV50 Abstract: BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN	Original	BUV50 125oC BUV50 BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR	PDF
zxt753 Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC Text: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)	Original	ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -500mA -50mA zxt753 ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC	PDF

2A 100V NPN Search Results

2A 100V NPN Result Highlights (5)

2A 100V NPN Datasheets Context Search

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2SA1709

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TS16949

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marking 1a1

cb 237

BUW50

t6753

philips BDV64A

SC06960

2A 40V NPN

BUV50

BUV50

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BUV50

zxt753