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    2N 5883 Search Results

    2N 5883 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL58831CRZ Renesas Electronics Corporation Dual Laser Driver with APC Amplifier and Spread Spectrum Oscillator Visit Renesas Electronics Corporation
    ISL58831CRZ-T13 Renesas Electronics Corporation Dual Laser Driver with APC Amplifier and Spread Spectrum Oscillator Visit Renesas Electronics Corporation
    10158832-0020DR1LF Amphenol Communications Solutions 1.25MM WIRE TO BOARD HEADER Visit Amphenol Communications Solutions
    10058835-1003LF Amphenol Communications Solutions Micro-TCA Card Edge Connectors,Surface Mount termination,170 contacts,30u\\. Gold plating,Matte Tin tail plating. Visit Amphenol Communications Solutions
    10158832-0014DR1LF Amphenol Communications Solutions 1.25MM WIRE TO BOARD HEADER Visit Amphenol Communications Solutions
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    2N 5883 Price and Stock

    Microchip Technology Inc 2N5883

    PNP POWER TRANSISTOR SILICON AMP
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    Mouser Electronics 2N5883
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    Newark 2N5883 Bulk 100
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    Microchip Technology Inc 2N5883 36 Weeks
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    NAC 2N5883 Tray 7
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    Master Electronics 2N5883
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    onsemi 2N5883G

    TRANS PNP 60V 25A TO204
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    Rochester Electronics LLC 2N5883G

    TRANS PNP 60V 25A TO204
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    Central Semiconductor Corp 2N5883 PBFREE

    Transistor GP BJT PNP 60V 25A 2-Pin TO-3 Sleeve (Alt: 2N5883 PBFREE)
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    Motorola Semiconductor Products 2N5883

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    Quest Components 2N5883 68
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    2N5883 4
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    2N5883 1
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    2N 5883 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5883 Motorola 25A PNP SILICON POWER TRANSISTOR Original PDF
    2N5883 On Semiconductor Complementary Silicon High-Power Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5883 On Semiconductor Bipolar Power TO3 PNP 25A 60V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 Original PDF
    2N5883 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5883 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5883 API Electronics 25 Amp Transistors Scan PDF
    2N5883 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5883 Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
    2N5883 Diode Transistor Transistor Short Form Data Scan PDF
    2N5883 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5883 General Transistor Power Transistor Selection Guide Scan PDF
    2N5883 Mospec POWER TRANSISTORS(25A,200W) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5883 Mospec Complementary Silicon High-Power Transistor Scan PDF
    2N5883 Motorola The European Selection Data Book 1976 Scan PDF
    2N5883 Motorola European Master Selection Guide 1986 Scan PDF
    2N5883 Motorola 25A Si Power Transistor Scan PDF
    2N5883 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5883 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5883 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5883 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    2N 5883 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5886 MOTOROLA

    Abstract: 2N5885 MOTOROLA 2N5984 2N5883 2N5883 MOTOROLA 2N5884 2N5885 2N5886 transistor 2N5884
    Text: MOTOROLA Order this document by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N 5883 C om plem entary Silicon H igh-P ow er Transistors 2N 5884* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N 5885 Low Collector-Emitter Saturation Voltage —


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    PDF 2N5883/D 2N5883 2N5885 2N5884 2N5886 2N5883/D 2N5886 MOTOROLA 2N5885 MOTOROLA 2N5984 2N5883 MOTOROLA transistor 2N5884

    2N5969

    Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20


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    PDF 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955 2N5956 2N5958 2N5960 2N5969 2n6182 2N6031 i8080 2N6030

    transistor 2N 3792

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PN P TO-3 VcEO sus VOLTS Ic (m ax) A M PS 2N 3789 60 10 2 5 -9 0 @ l/2 2N 3790 80 10 2N 3791 60 2N 3792 hFE@ V CE VcE(sat) @ I cA b (V @ A /A ) Pr D * W ATTS fj (M H z) l@ 4/.4 150 4 2 5 -9 0 @ l/2


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    2N5885

    Abstract: 2N 5883 2n 5886
    Text: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current


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    PDF 2N5885, 2N5886 90-mJ 2N5885 2N5885 2N 5883 2n 5886

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


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    PDF MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631

    2N6187

    Abstract: TO-59 2N6030 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BR E A K D O \ WN V O LT A G E S n m CASE V CB V CE V EB 'c SAT . V O L T A GES M ax. 'c M in . M ax. (A) 'b (A) VCE (V) V BE (V) (A) 2N 5876 TO-3 80 80 6 4 4 20 100 4 0.5 1 2 2N 5879 TO-3 60 60 6 4 6 20


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    PDF 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955 2N5956 2N5958 2N5960 2N6187 TO-59 2N6030

    2N5883

    Abstract: 2N 5883 2N588
    Text: T Y P E S 2N5883. 2N588 4 P- N - P S I N G L E - D I F F U S E D S I L I C O N P O W E R T R A N S I S T O R S c < FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING APPLICATIO N S D ESIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5885, 2N 5886 •


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    PDF 2N5883. 2N588 90-mJ 2N5883 2N 5883

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


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    PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    N4003

    Abstract: SDT8756 SOT87 TO114 2N5330 SDT3204 SDT5835 SDT5836 SDT5837 SDT5838
    Text: 41 SILICON POWER TRANSISTORS S A T U R A T IO N V O L T A G E S @ C U R R E N T G A IN @ TYPE NUM BER C A SE TYPE V CBO V VCEO V EBO v I v hF E MIN. I M AX. 'c VCE V C E s V BE(s) V 'c 'b A v 5.0 10.0 10.0 10.0 10.0 10.0 1.75 .40 .40 2.50 1.20 1.20 10.0 10.0


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    PDF SDT3204 SDT5835 SDT5836 SDT5837 SDT5838 SDT5865 O-114 SDT5866 SDT5867 N4003 SDT8756 SOT87 TO114 2N5330

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


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    PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


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    PDF orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845