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    2N2894 TRANSISTOR Search Results

    2N2894 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N2894 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    n1212

    Abstract: 2N2894 2N2894A
    Text: 2N2894 Silicon PNP Transistor Intended For High-speed Low Saturation. 1 of 1 Home Part Number: 2N2894 Online Store 2N2894 Diodes Silic o n Transistors PNP Trans is t o r Int ended For High- speed Lo w


    Original     		2N2894 com/2n2894 2N2894 n1212 2N2894A PDF

    PW 2N

    Abstract: 2N2894 2n320 2N3209
    Text: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023


    Original     		2N2894 2N3209 2N2894, 2N3209 PW 2N 2N2894 2n320 PDF

    2n3209

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 20 STERN AVE. (212)227-6005 SPRINQRELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case,


    Original     		2N2894 2N3209 2N2894, 2N3209 100mA -10mA PDF

    2N2894

    Abstract: No abstract text available
    Text: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS


    Original     		2N2894 2N2894 PDF

    ic 4081 datasheet

    Abstract: IC 4081 data sheet features of ic 4081 ic 4081 ic and 4081 2N2894 4081 datasheet 4081 transistor coms 4081 ic and 4081 datasheet
    Text: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:


    Original     		2N2894 200mA -30mA ic 4081 datasheet IC 4081 data sheet features of ic 4081 ic 4081 ic and 4081 2N2894 4081 datasheet 4081 transistor coms 4081 ic and 4081 datasheet PDF

    2N2894

    Abstract: 12v switching transistor 2n2894 transistor 2N2894A 036w
    Text: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:


    Original     		2N2894 5/30m 2N2894 12v switching transistor 2n2894 transistor 2N2894A 036w PDF

    2N2894

    Abstract: 2n2894 transistor TRANSISTOR 533
    Text: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:


    Original     		2N2894 200mA 100MHz 140KHz 300ms, 2N2894 2n2894 transistor TRANSISTOR 533 PDF

    2N2894

    Abstract: No abstract text available
    Text: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:


    Original     		2N2894 300ms, 2N2894-JQR" 2N2894-JQR-B 5/30m 400MHz 2N2894 PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    Untitled

    Abstract: No abstract text available
    Text: u «£>£/m'-Co/2auc£oT LPtoauaii, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230). 5.31 (0.209)" FEATURES


    Original     		2N2894 -30mA 100MHz 140KHz 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2894 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)12 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.150


    Original     		2N2894 PDF

    2n2894

    Abstract: 3209
    Text: SGS-THOMSON Rfl0» [iyiM !0 gi 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitax­ ial PNP transistors in JedecTO-18 metal case, in­ tended for high speed, low saturation switching ap­ plications up to 100 mA.


    OCR Scan     		2N2894, 2N3209 JedecTO-18 2N2894 2N3209 3209 PDF

    2N2894

    Abstract: 2N3209 g3105
    Text: 3DE j> b 53 ? QG3i i 3^ b m 7^ . / = 7 S G S -T H 0 M S 0 N ^7#JD i@iLi01T^ 2 [M]a(gi 2N2894 2N3209 s G S-THOMSON HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in Jedec TO-18 metal case, Intended for high speed, low saturation switching


    OCR Scan     		2N2894 2N3209 2N2894, 2N3209 G-3105 2N2894-2N3209 D031142 S-4621 g3105 PDF

    2N2894

    Abstract: No abstract text available
    Text: 30E ]> n T'ìs'ìea? e m a n a i b m , 2N2894 2N3209 f Z 7 SGS-THOMSON ^ 7 # M O M iy iû ï^ M O Û S S G S - TH O M S ON HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in Jedec TO-18 metal case,


    OCR Scan     		2N2894 2N3209 2N2894, 2N3209 2N2894-2N3209 2N2894 PDF

    m 60 n 03 g10

    Abstract: No abstract text available
    Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60


    OCR Scan     		7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10 PDF

    2N4423

    Abstract: No abstract text available
    Text: TYPE 2N4423 P-N-P SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 8 9 1 2 4 , A U G U S T 1 9 6 6 - R E V I S E D M A Y 1 9 6 6 SILECTf TRANSISTOR FOR HIGH-SPEED SWITCHING APPLICATIONS • Electrically Similar to the 2N2894 • Rugged, One-Piece Construction with Standard TO-18 100-mil Pin Circle


    OCR Scan     		2N4423 2N2894 100-mil -202C PDF

    2N3012

    Abstract: NS2N 2N3012M 2N2894
    Text: TYPES 2N2894, P-N-P SILICON TRANSISTORS B U L L E T I N NO. D L -S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS 0.5 v Max at 100 ma Guaranteed VC f » a t High f T 400 Me Min * m e ch a n ic a l d a ta C ollecto r-Base V o l t a g e . — 12 v


    OCR Scan     		2N2894, 2N3012 NS2N 2N3012M 2N2894 PDF

    2N3012

    Abstract: 2N2894 2N3012M
    Text: TYPES ¿«1884 2N3012 P-N-P SILICON TRANSISTORS B U L L E T IN NO. O L S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • Guaranteed VCE|>ot| 0 .5 v Max at 100ma • High f , - 400 Me Min "m echanical d ata T H E COLLECTOR IS IN E L E C T R IC A L


    OCR Scan     		2N3012 100ma 2N2894 2N3012M PDF

    BSS56

    Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BSS56 f025 ic marking z7 PDF

    2N2369At

    Abstract: 2N2222A motorola 2N3440 MOTOROLA CV8616 2N3439 MOTOROLA 2N1893 motorola JANTX 2n2484 motorola 2N5416 MOTOROLA 2n5230 2N4033 JANS
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		MIL-19500 i2945 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N3501 2N1893 2N2369At 2N2222A motorola 2N3440 MOTOROLA CV8616 2N3439 MOTOROLA 2N1893 motorola JANTX 2n2484 motorola 2N5416 MOTOROLA 2n5230 2N4033 JANS PDF

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Text: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


    OCR Scan     		2N929 2N930 2N2483 N2484 2S501 2S502 2S503 2N3707 2N3012 TIS50 silect N4060 bc182l 2N3709 PDF

    2N2475

    Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


    OCR Scan     		BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N2369 FERRANTI PDF

    GERMANIUM SMALL SIGNAL TRANSISTORS

    Abstract: AD142 AF239 AU113 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS 2N4358 BSX29 fairchild semiconductors 2N2894
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors Metal Can T 018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S


    OCR Scan     		BSX29 35322H 2N2894 35323F N2894A 35324D 2N3209 35325B 2N5023 35326X GERMANIUM SMALL SIGNAL TRANSISTORS AD142 AF239 AU113 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS 2N4358 fairchild semiconductors PDF

    2N2219 transistor

    Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
    Text: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


    OCR Scan     		T0-18 2N4036 2N2102 BFX30 ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N2219 transistor BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A BFX29 PDF