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    2N2904 Price and Stock

    onsemi 2N2904

    TRANS PNP 40V 0.6A TO39
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    Microchip Technology Inc 2N2904

    PNP TRANSISTOR
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    Microchip Technology Inc 2N2904AL

    TRANS PNP 60V 0.6A TO5
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    Microchip Technology Inc JANS2N2904

    TRANS PNP 60V 0.6A TO39
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    Microchip Technology Inc JAN2N2904AL

    TRANS PNP 60V 600MA TO5AA
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    2N2904 Datasheets (208)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2904 Microsemi BJT, PNP, Switching Silicon Transistor, VCB0 60V, IC 0.6A - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original PDF
    2N2904 On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original PDF
    2N2904 Semelab General Purpose PNP Transistor - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original PDF
    2N2904 Semico Chip Type 2C2904A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original PDF
    2N2904 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2904 Bharat Electronics Transistor Selection Guide Scan PDF
    2N2904 Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N2904 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    2N2904 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2904 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2904 Dionics PNP Si High Current Transistor Scan PDF
    2N2904 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Scan PDF
    2N2904 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N2904 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N2904 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N2904 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N2904 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N2904 General Diode Transistor Selection Guide Scan PDF
    2N2904 Infineon Technologies TRANS GP BJT PNP 40V 0.6A 3TO 39 Scan PDF
    2N2904 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    ...

    2N2904 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2905

    Abstract: 2N2904 2N2904 PNP Transistor transistor 2N2905 2N2904A 2N2904 transistor 2n2905a Transistor 2N2905A 2n2904 2n2905 TRANSISTOR 2n2904
    Text: 2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications.


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    PDF 2N2904 2N2904A 2N2905 2N2905A 2N2904, 2N2904A, 2N2905A) 2N2905) 2N2904 PNP Transistor transistor 2N2905 2N2904 transistor Transistor 2N2905A 2n2904 2n2905 TRANSISTOR 2n2904

    2N2904A

    Abstract: 2N2904AJ 2N2904AJV 2N2904AJX
    Text: 2N2904A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2904AJ • JANTX level (2N2904AJX)


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    PDF 2N2904A MIL-PRF-19500 2N2904AJ) 2N2904AJX) 2N2904AJV) MIL-STD-750 MIL-PRF-19500/290 2N2904A 2N2904AJ 2N2904AJV 2N2904AJX

    2N2904JX

    Abstract: 2N2904 PNP Transistor
    Text: 2N2904 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appedix E • JAN level 2N2904J • JANTX level (2N2904JX)


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    PDF 2N2904 MIL-PRF-19500 2N2904J) 2N2904JX) 2N2904JV) MIL-STD-750 MIL-PRF-19500/290 2N2904JX 2N2904 PNP Transistor

    To5 transistor

    Abstract: 2N2904AL
    Text: 2N2904AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


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    PDF 2N2904AL O205AA) 20-Aug-02 To5 transistor 2N2904AL

    Untitled

    Abstract: No abstract text available
    Text: 2N2904 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appedix E • JAN level 2N2904J • JANTX level (2N2904JX)


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    PDF 2N2904 MIL-PRF-19500 2N2904J) 2N2904JX) 2N2904JV) MIL-STD-750 MIL-PRF-19500/290

    Untitled

    Abstract: No abstract text available
    Text: 2N2904A Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appedix E • JAN level 2N2904AJ • JANTX level (2N2904AJX)


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    PDF 2N2904A MIL-PRF-19500 2N2904AJ) 2N2904AJX) 2N2904AJV) MIL-STD-750 MIL-PRF-19500/290

    Untitled

    Abstract: No abstract text available
    Text:        The 2N2904A is Designed for General Purpose Amplifier and Switching Applications.     MAXIMUM RATINGS                        θ


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    PDF 2N2904A

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=50nA Max. , IBL=50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity.


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    PDF 2N2904E

    2N2904

    Abstract: 2n2905 2N2905a 2n2904a 2N2904 transistor 2N2905 transistor 2n2904 2n2905 TRANSISTOR 2n2905 qpl 2N2905 TRANSISTOR 2n2904
    Text: TECHNICAL DATA 2N2904, 2N2904A JAN, JTX, JTXV 2N2904AL JAN, JTX, JTXV 2N2905, 2N2905A JAN, JTX, JTXV 2N2905AL JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/290 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage


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    PDF 2N2904, 2N2904A 2N2904AL 2N2905, 2N2905A 2N2905AL MIL-PRF-19500/290 2N2904 2N2905 2N2904A, 2n2905 2N2904 transistor 2N2905 transistor 2n2904 2n2905 TRANSISTOR 2n2905 qpl 2N2905 TRANSISTOR 2n2904

    2N2904 PNP Transistor

    Abstract: S2N2905A
    Text: TECHNICAL DATA 2N2904 JAN, JTX, JTXV, JANS 2N2904A JAN, JTX, JTXV, JANS 2N2904AL JAN, JTX, JTXV, JANS 2N2905 JAN, JTX, JTXV, JANS 2N2905A JAN, JTX, JTXV, JANS 2N2905AL JAN, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/290 PNP SWITCHING SILICON TRANSISTOR


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    PDF 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL MIL-PRF-19500/290 S2N2904 S2N2905 S2N2904A, 2N2904 PNP Transistor S2N2905A

    2N2904

    Abstract: No abstract text available
    Text: 2N2904 MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE PNP TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES 7 .7 5 (0 .3 0 5 )


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    PDF 2N2904 100MHz 100kHz 150mA 2N2904

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    1N916

    Abstract: 2N2904U
    Text: SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 2 5 3 4 DIM A A1 B A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C Low Leakage Current @VCE=30V, VEB=3V. D Excellent DC Current Gain Linearity.


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    PDF 2N2904U 1N916 2N2904U

    2n2907 Motorola

    Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
    Text: MOTOROLA 2N2904A* thru 2N2907,A* PNP Silicon Annular Hermetic Transistors Designed for high–speed switching circuits, DC to VHF amplifier applications and complementary circuitry. COLLECTOR 3 • High DC Current Gain Specified — 0.1 to 500 mAdc • High Current–Gain — Bandwidth Product —


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    PDF 2N2904A* 2N2907 2N2904A, 2N2905A 2N2907A 2N2904A 2N2907, 2N2219, 2N2222, 2N2904A/D* 2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application

    2904

    Abstract: 2907 a 2907 2N2904 2N2907 2N2905
    Text: 2N2904 2N 2905 2N 2906 SILICON PLANAR PNP GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904, 2N 2905, 2N 2906 and 2N 2907 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 fo r 2IM 2904 and 2N 2905 and in Jedec T O -1 8 (fo r 2N 2906 and; 2N 2907)


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    PDF 2N2904 -10mA 2904 2907 a 2907 2N2907 2N2905

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39


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    PDF 2N2904/2N2905 2N2906/2N2907 2N2904 2N2905 2N2906 2N2907 JedecTO-39 2N2904, 2N2905)

    2N2220

    Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2219 transistor 2N2475 2N2904 2N2905 2N2906

    2N2222

    Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbS3^31 D02fiU4 blS I APX b'lE T> 2N2904 2N2904A SILICON PLANAR EPITAXIAL TRANSISTOR|S W Z P-N-P transistors in TO-39 metal envelopes designed primarily for high-speed switching and driver applications for industrial service. QUICK REFERENCE DATA


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    PDF D02fiU4 2N2904 2N2904A

    2N2800

    Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A
    Text: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5


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    PDF 2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A CBR30 0000s23 2N2904 2N2906 2N2906A

    2N2905

    Abstract: 2N2905A 2n290a 2N2904 transistor 2N2904A transistor 2N2905 2N2904 PNP Transistor TRANSISTOR 2n2904 2N290 2N2905 transistor
    Text: Data Sheet ^ - - 2N2904 2N2904A 2N2905 2N2905A » T M COilFPH H II Sem iconductor Corp. . 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP S i l i c o n T r a n s i s t o r JEDEC T0-39 Case Manufacturers of World Class Discrete Semiconductors


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    PDF 2N2904 2N2904A 2N2905 2N2905A 2N2904 2N2905 500mA, 2N2905A 2n290a 2N2904 transistor 2N2904A transistor 2N2905 2N2904 PNP Transistor TRANSISTOR 2n2904 2N290 2N2905 transistor

    2N4033

    Abstract: 2N2905 2N3702
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120


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    PDF 2N2838 2N2868 2N2897 2N2904 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N4033 2N3702

    2N3072

    Abstract: No abstract text available
    Text: TO-39 Metal-Can Package Transistors PHP Maxim um Ratings Type No. 2N2904 Electrical Characteristics (Ta=25°C, U n le ss Otherwise Specified) ^CBO ^CEO ^EBO *CM *C80 ^CB 'ces ^CE (V) Min (V) Min Pd (W) 8Tc=25°c 'c (V) Min (A) (A) <PA) Max « (V) (ma) Max


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    PDF 2N3503 2N363S 2N3636 2N3637 2N4030 2N3072

    D2T2904

    Abstract: itt 2n2905 D2T2904A
    Text: TYPES D2T2904, D2T2904A, D2T2905, D2T2905A DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7311971, M A R C H 1973 TWO G E N E R A L PU RPO SE T R A N S IS T O R S IN O N E P A C K A G E • Each Triode Electrically Similar to 2N2904, 2N 2904A,


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    PDF D2T2904, D2T2904A, D2T2905, D2T2905A 2N2904, 2N2905, 2N2905A D2T2218, D2T2218A, D2T2219, D2T2904 itt 2n2905 D2T2904A