LT1013 anemometer
Abstract: rtd circuits with lt1014 LM324 temperature controller LT1013 equivalent how to use STRAIN GAUGE with lm358 sine wave inverter circuit diagram LM324 50Hz rosemount 118mf rosemount TEMPERATURE SENSOR 118MF pin configuration transistor 2N2222
Text: LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground while Sinking Current Pin Compatible to 1458 and 324 with Precision Specs
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LT1013/LT1014
LT1014)
LT1013)
55Vp-p
0P-07,
07pA/Hz
LT1004
220pF
1N5821
LT1013
LT1013 anemometer
rtd circuits with lt1014
LM324 temperature controller
LT1013 equivalent
how to use STRAIN GAUGE with lm358
sine wave inverter circuit diagram
LM324 50Hz
rosemount 118mf
rosemount TEMPERATURE SENSOR 118MF
pin configuration transistor 2N2222
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sensor rosemount 118mf
Abstract: Thermistor hot-wire strain gauge amplifier lm324 CA3046 equivalent LM358 sine wave oscillator 4 to 20ma current source circuit diagram lm358 CANON-FN30 LT1014CN CD40164 LVDT
Text: LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) Description Features Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground While Sinking Current n Pin Compatible to 1458 and 324 with Precision Specs
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LT1013/LT1014
LT1014)
LT1013)
0P-07,
07pA/Hz
LT1013
LT1014
i013/14
LT2078/LT2079
LT2178/LT2179
sensor rosemount 118mf
Thermistor hot-wire
strain gauge amplifier lm324
CA3046 equivalent
LM358 sine wave oscillator
4 to 20ma current source circuit diagram lm358
CANON-FN30
LT1014CN
CD40164
LVDT
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Untitled
Abstract: No abstract text available
Text: LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) DESCRIPTION FEATURES n n n n n n n n n Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground While Sinking Current Pin Compatible to 1458 and 324 with Precision Specs
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LT1013/LT1014
LT1014)
LT1013)
0P-07,
07pA/â
LT2078/LT2079
LT2178/LT2179
LTC6081/LTC6082
LTC6078/LTC6079
10134fd
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npn 2n2222 transistor
Abstract: MJE2955 power amplifier circuit 2N3904 transistor free LT1020 LT1020C LT1020CJ LT1020CN LT1020I LT1020IN LT1020M
Text: LT1020 Micropower Regulator and Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1020 is a combination micropower positive regulator and free collector comparator on a single monolithic chip. With only 40µA supply current, the LT1020 can
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LT1020
LT1020
125mA
125mA.
LT1676
440mA
100kHz,
LT1761
100mA,
npn 2n2222 transistor
MJE2955 power amplifier circuit
2N3904 transistor free
LT1020C
LT1020CJ
LT1020CN
LT1020I
LT1020IN
LT1020M
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sn1020
Abstract: LT1020 LT1020C LT1020CJ LT1020CN LT1020I LT1020IN LT1020M 1M transistor 2N3904 transistor free
Text: LT1020 Micropower Regulator and Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1020 is a combination micropower positive regulator and free collector comparator on a single monolithic chip. With only 40µA supply current, the LT1020 can
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LT1020
LT1020
125mA
125mA.
LT1676
440mA
100kHz,
LT1761
100mA,
sn1020
LT1020C
LT1020CJ
LT1020CN
LT1020I
LT1020IN
LT1020M
1M transistor
2N3904 transistor free
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Untitled
Abstract: No abstract text available
Text: LT1020 Micropower Regulator and Comparator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1020 is a combination micropower positive regulator and free collector comparator on a single monolithic chip. With only 40µA supply current, the LT1020 can
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LT1020
LT1020
125mA
125mA.
LT1676
440mA
100kHz,
LT1761
100mA,
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lt1052
Abstract: 74C90 LTC1052 TTL 7490 ICL7652CTV LTC1052CH LTC1052MH LTC7652 LTC7652CH strain gauge amplifier 102
Text: LTC1052/LTC7652 Zero-Drift Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Max Offset: 5µV Guaranteed Max Offset Drift: 0.05µV/°C Typ Offset Drift: 0.01µV/°C Excellent Long Term Stability: 100nV/√Month Guaranteed Max Input Bias Current: 30pA
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LTC1052/LTC7652
100nV/Month
120dB
1052fa
lt1052
74C90
LTC1052
TTL 7490
ICL7652CTV
LTC1052CH
LTC1052MH
LTC7652
LTC7652CH
strain gauge amplifier 102
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ltc1052
Abstract: LT318A
Text: LTC1052/LTC7652 Zero-Drift Operational Amplifier FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Max Offset: 5µV Guaranteed Max Offset Drift: 0.05µV/°C Typ Offset Drift: 0.01µV/°C Excellent Long Term Stability: 100nV/√Month Guaranteed Max Input Bias Current: 30pA
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LTC1052/LTC7652
100nV/â
120dB
LTC7652
1052fa
ltc1052
LT318A
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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2N2094
Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
Text: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821
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D0G0434
2N2604
60min
2N2605
150min
2N2639
65min
2N2640
2N2641
2N2094
2N2096
2N2916
2N2021
2N2914
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Untitled
Abstract: No abstract text available
Text: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822
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DDG0434
2N2604
2N2605
2N2639
2N2640
2N2641
2N2642
2N2643
2N2644
2N2815
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2N3638 equivalent
Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
Text: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813
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500mA
2N5810
2N5811
2N5812
2N5813
2N5814
2M5815
2N5816
2M5817
2N5818
2N3638 equivalent
2N2219 transistor substitute
2N3638 transistor
2N5815
of 2n2905
1N4532
hs5810
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Untitled
Abstract: No abstract text available
Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE max
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bDT17Ã
T-27-01
2N4036
2N2017
2N2049
2N2102
2N2102A
2N2192
2N2192A
2N2192B
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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2N5828
Abstract: 2N3854A 2N6000 2N3638 2N6006 2N6002 GET3013 GET3014 2N6004 GET3646
Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/iA
800mA
GET706
GET708
GET914
GET3013
GET3646
GE1705
CET708
2N5828
2N3854A
2N6000
2N3638
2N6006
2N6002
GET3014
2N6004
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2N6016
Abstract: 2N5816 2N3856 2N3638A 2N5822 2N6000 2N6002 GET3014 GET3638 GET706
Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4
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50/iA
800mA
GET706
GET708
GET914
GET3013
GET3646
GE1705
CET708
2N6016
2N5816
2N3856
2N3638A
2N5822
2N6000
2N6002
GET3014
GET3638
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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CDIL BC141-16
Abstract: BFX40 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840
Text: -39 : H DIM A B C D E F G H J K PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR L MEN 8,50 7,74 6,09 0,40 - 2,41 4,82 0,71 0,73 12,7 42 DEG . ' MAX 9,39 8,50 6,60 0,53 0,88 2,66 5,33 0,86 1,02 48 DEG ALL DIMENSIONS ARE IN M.M. TO-39 Metal-Can Package Transistors NPN
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2N656
2N657
BFX40
BFX41
BFX87
CK100
CK150
CDIL BC141-16
CDIL 2N2219a
2N3019 CDIL
bfx64
h071
2N1613
2N1644
2N1837
2N1840
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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SN72710L
Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4
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LH0002C
LH0002CN
NH0005C
DAC08CZ
NH0014C
DH0034
78M12HC
MMH0026CG
79M12AHC
75460BP
SN72710L
MC1013P
MC680P
796HC
mc1235l
MC838P
MC814G
MC1670L
723HC
741hm
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1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
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301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0HF40
0HF60
0HF80
6FP10
6F100
70HF10
UAA2001
MC8500
micromodule m68mm19
1N9388
74ALS643
2N6058
MC145026
2N5160 MOTOROLA
MC3340 equivalent
pn3402
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