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    Microchip Technology Inc 2N657

    PNP TRANSISTOR
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    Microchip Technology Inc 2N657A

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    Microchip Technology Inc 2N6579

    POWER BJT
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    2N657 Datasheets (175)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N657 Continental Device India Npn Silicon Planar Transistor Original PDF
    2N657 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N657 Bharat Electronics Transistor Selection Guide Scan PDF
    2N657 Central Semiconductor Various Transistors Scan PDF
    2N657 Central Semiconductor Leaded Devices Scan PDF
    2N657 Central Semiconductor Transistor Selection Guide Scan PDF
    2N657 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N657 General Diode Transistor Selection Guide Scan PDF
    2N657 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N657 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N657 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N657 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N657 Unknown GE Transistor Specifications Scan PDF
    2N657 Unknown GE Transistor Specifications Scan PDF
    2N657 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N657 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N657 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N657 Unknown Vintage Transistor Datasheets Scan PDF
    2N657 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N657 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    2N657 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 2n657

    Abstract: 2N657
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE V


    Original     		PDF ISO/TS16949 2N657 C-120 2N657Rev190701 TRANSISTOR 2n657 2N657

    Untitled

    Abstract: No abstract text available
    Text: 2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications.


    Original     		PDF 2N6576 2N6577 2N6578 2N6576, 2N6577, 2N6578 100mA

    2N6576

    Abstract: 2N6578 2N6577 darlington npn 90v
    Text: Inchange Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    2N6573

    Abstract: No abstract text available
    Text: 2N6573 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6573 O204AA) 31-Jul-02 2N6573

    2N6575

    Abstract: No abstract text available
    Text: 2N6575 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6575 O204AA) 31-Jul-02 2N6575

    2N3055

    Abstract: NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578
    Text: 2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase for linear and switching Replacement for 2N3055 Popular Voltage transistors, suitable and Driver Performance Diode Protection Can Be Driven from Operating darl ington applications.


    Original     		PDF 2H6576 2H6577 2N6578 2N3055 2N3055 NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6578 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6576 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6576 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6578 O204AA) 18-Jun-02

    TRANSISTOR 2n657

    Abstract: 2N657
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL


    Original     		PDF 2N657 C-120 2N657Rev190701 TRANSISTOR 2n657 2N657

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF 2N657 C-120 2N657Rev190701

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL


    Original     		PDF 2N657 C-120 2N657Rev190701

    PNP Transistors

    Abstract: hFE-20
    Text: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575


    Original     		PDF 2N6575 2N6575 O-204AA/TO-3 07-Sep-2010 PNP Transistors hFE-20

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

    2N6580

    Abstract: 2N6579 2N6581 TWX910-950-1942
    Text: SÛUARE ] CO/ 6ENERAL 3918590 ^•5 GENERAL D ■ flSSSSGö OGGSIMD T ■ 95D S EMI CONDUCTOR 02140 D T "~ 3 3 - / 3 General ^ Sf* Semiconductor ^ Industries, Inc. HIGH POW ER NPN . 2N6579 2N6580 2N6581 S Q U R R E Tt C O M P H N Y Switch P/vt® TRANSISTO RS


    OCR Scan     		PDF 2N6581 -2N6579 2N6580 2N6581 570/iH O-204 23MAX 351mm> TWX910-950-1942 2N6579 TWX910-950-1942

    2N2712

    Abstract: 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712
    Text: CRO M PS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION T he above types are N P N silico n planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circu its. T h eir m axim um po w er dissipation = I6O111W at T a = 2 5 ° C .


    OCR Scan     		PDF I6O111W PS/2N6573 T0-92A T0-92B MPS/2N2711 MPS/2N2712 12pFn® MPS/2N2716 MPS/2N2923 MPS/2N2924 2N2712 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712

    HEP transistors

    Abstract: 2n6576 2N6578
    Text: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:


    OCR Scan     		PDF 2N6576, 2N6577, 2N6578 15-Ampere 2751ft 2N6578 HEP transistors 2n6576

    2N6576

    Abstract: 2N6576 equivalent
    Text: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:


    OCR Scan     		PDF 2N6576, 2N6577, 2N6578 15-Ampere O-204AA 2N6578 2N6576 2N6576 equivalent

    2n4071

    Abstract: 2N6581
    Text: GENERAL , SEMICONDUCTOR 3918590 GENERAL 72 'DE 1 3 T ÌÙ S ÌD SEMICONDUCTOR lVl^ f , General ^ 3 ^ Sem iconductor Industries, Ine . 72C 01933 □ □ □ 1 CÌ 3 3 1 3 3 -# ^ 0 _ 7 ^ NPN T R A N S IS T O R C H IP S q U H R E n CQM PRNY Typical Device Types: 2N4071, 2N6579, 2N6580, 2N6581, 2N6582, 2N6583


    OCR Scan     		PDF 2N4071, 2N6579, 2N6580, 2N6581, 2N6582, 2N6583 40nsec 350nsec 1250nsec 300nsec 2n4071 2N6581

    2n2711

    Abstract: 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716
    Text: MPS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. Their maximum power I6O111W at Ta = 25°C . dissipation CASE T0-92A


    OCR Scan     		PDF MPS/2N6573 I6O111W T0-92A T0-92B MPS/2N2711 MPS/2N27I2 12pFii MPS/2N2716 MPS/2N2923 MPS/2N2924 2n2711 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716

    2N6575

    Abstract: MJ13014 2N6583 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543
    Text: Type* PUP Comp] •- VUO tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


    OCR Scan     		PDF 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6575 MJ13014 2N6583

    2N6578

    Abstract: 2N6576
    Text: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 5 76 2 N 6577 2 N 65 78 NPN Silicon Power Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • •


    OCR Scan     		PDF 2N6576/D 2N3055 2N6578 2N6576

    2N498

    Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
    Text: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,


    OCR Scan     		PDF 0Q001BS MIL-S-19500/74E 2N497, 2N498, 2N656, 2N657 2N497S, 2N498S, 2N656S, 2N657S 2N498 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S

    NPN Transistor 2N3055

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N 6576 2N 6577 2N 6578 NPN Silicon Pow er Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •


    OCR Scan     		PDF 2N6576/D 2N3055 NPN Transistor 2N3055