2N2905 NPN TRANSISTOR Search Results

2N2905 NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2N2905 NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N2222A TO-92 Abstract: 2n2222 to92 2n2222 to-92 transistor 2n2222a data sheet to-92 2N2219 transistor equivalent 2n2906 2N2907 PNP Transistor to 92 2N3904-152 2n2907 TO-92 2N2907 NPN Transistor Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) NPN COMPL. PAGE 2N2905	Original	2N2905 2N2219 2N2905A 2N2219A 2N2906 2N2222 2N2906A 2N2222A 2N2907 2N2222A TO-92 2n2222 to92 2n2222 to-92 transistor 2n2222a data sheet to-92 2N2219 transistor equivalent 2n2906 2N2907 PNP Transistor to 92 2N3904-152 2n2907 TO-92 2N2907 NPN Transistor	PDF
2N2905 Abstract: TRANSISTOR 2n2905 2n2219a npn transistor 2N2219 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistors	Original	M3D111 2N2905; 2N2905A 2N2219 2N2219A. SCA54 117047/00/02/pp8 2N2905 TRANSISTOR 2n2905 2n2219a npn transistor 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application	PDF
2N2907A2 Abstract: 2N2907 NPN Transistor TRANSISTOR NPN 60V 2N2905A-JQR-B 2n2907 pnp bipolar transistor 2N2905 2n2907 TRANSISTOR PNP 2N3036L 2n2907am Text: Search Results Part number search for devices beginning "2N2905" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N2905 PNP TO39 40V 0.6A 100 300 10/0.15	Original	2N2905" 2N2905 2N2905A 2N2905ACSM 2N2905A-JQR-B 2N2905AL 2N2905-JQR-B 2N2905L 200MHz 2N2907A2 2N2907 NPN Transistor TRANSISTOR NPN 60V 2n2907 pnp bipolar transistor 2n2907 TRANSISTOR PNP 2N3036L 2n2907am	PDF
2n2907 Motorola Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907 Text: MOTOROLA 2N2904A* thru 2N2907,A* PNP Silicon Annular Hermetic Transistors Designed for high–speed switching circuits, DC to VHF amplifier applications and complementary circuitry. COLLECTOR 3 • High DC Current Gain Specified — 0.1 to 500 mAdc • High Current–Gain — Bandwidth Product —	Original	2N2904A* 2N2907 2N2904A, 2N2905A 2N2907A 2N2904A 2N2907, 2N2219, 2N2222, 2N2904A/D* 2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application	PDF
2N2219 transistor Abstract: IC 744 BSW68A BDX36 2N2219 2N2219A BFX34 BFX85 BSW66A BSW67A Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN MEDIUM-POWER SWITCHING TRANSISTORS TYPE NUMBER 2N2219 PACKAGE TO-39 VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 30 800	Original	2N2219 2N2219A BFX85 BSW66A BSW67A BSW68A BSX32 BSX59 BSX61 2N4036 2N2219 transistor IC 744 BSW68A BDX36 2N2219 2N2219A BFX34 BFX85 BSW66A BSW67A	PDF
MJE13005L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005-Q QW-R221-027 MJE13005L	PDF
2N2477 Abstract: 2N2219 transistor 2N2475 ZT184 2N2218 2N2219 2N2220 2N2221 2N2222 2N2904 Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*	OCR Scan	BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2477 2N2219 transistor 2N2475 ZT184 2N2904	PDF
2N2222 Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906 Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*	OCR Scan	BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906	PDF
2N2905 2N2219 Abstract: FT3904 2N1711A 2N295 2N33 2N2905 2N2222JAN 2N3135 Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) h FE V CEO VcE(sat) <V C E R > VO LTS TYPE MIN 2N957 20 2N2959 hpE @ MIN - MAX 45 lc mA VOLTS @ lc	OCR Scan	2N957 2N2959 2N3116 2IM2958 2N3115 2N916 2N703 2N1986 2N2195 2N2195A 2N2905 2N2219 FT3904 2N1711A 2N295 2N33 2N2905 2N2222JAN 2N3135	PDF
2N2905 Abstract: 2n2905a 2N2905 2N2219 transistor 2N2905 2N2905 NPN transistor Text: Philips Semiconductors Product specification PNP switching transistors FEATURES 2N2905; 2N2905A PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching	OCR Scan	2N2219 2N2219A. 2N2905; 2N2905A 2N2905 2N2905A 2N2905 2N2219 transistor 2N2905 2N2905 NPN transistor	PDF
2n697 Abstract: 2N956 2N2905 Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5	OCR Scan	2N2218A 2N2221A 2N2868 2N3110 2N2194 2N2194A 2N2194B 2N697 2N697JAN 2N696 2N956 2N2905	PDF
typical 2n2222 npn transistors Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium	OCR Scan	FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulTO-18 typical 2n2222 npn transistors 2N2475 2N2222 2N2483	PDF
NPN pnp MATCHED PAIRS 2n2905A 2N2219A Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62 Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW	OCR Scan	BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62	PDF
2N2477 Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium	OCR Scan	FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483	PDF

2n2907 pnp Abstract: 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220 2N2221 Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts V cE(Sat) @ Ic/lß Min/Max mA Volts mA/mA ft MHz Min Max hfe @ ic Cob pF	OCR Scan	2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2960 2N2961 2N3072 2n2907 pnp 2N2219 2N2219A 2N2220 2N2221	PDF
Untitled Abstract: No abstract text available Text: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822	OCR Scan	DDG0434 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815	PDF
2N2369 BSX20 Abstract: PMBT2369 PMBT2222 PH2907A PMBT2222A BF370 pn2222 2n2222 PN2222 pnp 2N3906 PMBT2907A Text: Concise Catalogue 1996 Philips Semiconductors SM A LL-S IG N A L T R A N S IS T O R S & D IO D E S & M E D IU M -P O W E R R E C T IF IE R S Small-signal transistors PRODUCT DATA: PAGES 22-27 NPN SWITCHING TRANSISTORS OVERVIEW surface-mount leaded TO-18 TO-39	OCR Scan	BSX20 2N2369 BF370 BFR54 PH2369 PN2369 2N3904 2N4124 BSX32 BSX59-61 2N2369 BSX20 PMBT2369 PMBT2222 PH2907A PMBT2222A pn2222 2n2222 PN2222 pnp 2N3906 PMBT2907A	PDF
MHQ6002 Abstract: 2N2219 transistor MHQ6001 2N2218 transistor transistor 2N2905 2N2218 2N2219 2N2904 2N2905 TRANSISTOR 2n2904 Text: MHQ6001 SILICON MHQ6002 QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS . . . designed for high-speed switching circuits, DC to applications and complementary circuitry. • DC Current Gain Specified — 1.0 to 300 mAdc • High Current-Gain—Bandwidth Product f-f = 400 MHz (Typ) @ I q = 50 mAdc	OCR Scan	MHQ6001 MHQ6002 2N2218 2N2219 2N2904 2N2905 O-116 100kH2> MHQ6002 2N2219 transistor MHQ6001 2N2218 transistor transistor 2N2905 2N2219 2N2905 TRANSISTOR 2n2904	PDF
2N2222A JANTX Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427 Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con struction. 'c Device Type V(BR) CEO Volts Min mA	OCR Scan	MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA	PDF
2N3638A Abstract: 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3013 GET3638 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pnp GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3638A 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3638	PDF
2N2905 2N2219 Abstract: 2n2219 2N2219A Transistor 2N2219A UHF power TRANSISTOR PNP TO-39 2N2219A philips 2N2905A RS 2N2219 2N2905 Text: Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • High-speed switching	OCR Scan	2N2219; 2N2219A 2N2219 2N2905 2N2905A. 2N2219A 2N2905 2N2219 Transistor 2N2219A UHF power TRANSISTOR PNP TO-39 2N2219A philips 2N2905A RS 2N2219 2N2905	PDF
NPN C460 Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496 Text: Metal Can Complementary Pairs Core Drivers \| Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25	OCR Scan	2N3724A 2N3725A 2N3244 BF257 BS9300 2N2219A 2N2221 2N2222 NPN C460 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 CV7496	PDF
2N2219 transistor substitute Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007	PDF
motorola 2N2270 Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427 Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~\| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.	OCR Scan	h3b7E54 007b70E 2N2896 2N3700# 2N2895 2N956 2N2897 2N718 2N2221A# 2N2222AI motorola 2N2270 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427	PDF

2N2905 NPN TRANSISTOR Search Results

2N2905 NPN TRANSISTOR Result Highlights (5)

2N2905 NPN TRANSISTOR Datasheets Context Search

2N2222A TO-92

2N2905

2N2907A2

2n2907 Motorola

2N2219 transistor

MJE13005L

2N2477

2N2222

2N2905 2N2219

2N2905

2n697

typical 2n2222 npn transistors

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

2N2477

2n2907 pnp

Untitled

2N2369 BSX20

MHQ6002

2N2222A JANTX

2N3638A

2N2905 2N2219

NPN C460

2N2219 transistor substitute

motorola 2N2270