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Susumu Co Ltd RG2012N-3831-C-T5 RES SMD 3.83KOHM 0.25% 1/8W 0805
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Susumu Co Ltd RG2012N-3831-W-T1 RES SMD 3.83KOHM 0.05% 1/8W 0805
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Susumu Co Ltd RG2012N-3831-P-T1 RES SMD 3.83KOHM 0.02% 1/8W 0805
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Susumu Co Ltd RG2012N-3831-B-T5 RES SMD 3.83K OHM 0.1% 1/8W 0805
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2N3831 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3831	Central Semiconductor	Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1.2 / Hfe=35min / fT(Hz)=200M / Pwr(W)=1	Original	PDF
2N3831	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1.2 / Hfe=35min / fT(Hz)=200M / Pwr(W)=1	Original	PDF
2N3831	Advanced Semiconductor	Silicon Transistors	Scan	PDF
2N3831	Central Semiconductor	NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER	Scan	PDF
2N3831	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N3831	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N3831	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N3831	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF
2N3831	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N3831	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N3831	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N3831	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N3831	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N3831	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N3831	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N3831	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N3831	Raytheon	Selection Guide 1977	Scan	PDF
2N3831	Semico	Medium Power Transistors	Scan	PDF
2N3831	Texas Instruments	Semiconductor and Components Data Book 1967/8	Scan	PDF

2N3831 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3831 Abstract: No abstract text available Text: 2N3831 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)	Original	2N3831 O205AD) 1-Aug-02 2N3831	PDF
Untitled Abstract: No abstract text available Text: 2N3831 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)70 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.35 h(FE) Max. Current gain.	Original	2N3831 Freq200M Code3-12	PDF
Untitled Abstract: No abstract text available Text: 2N3831 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)	Original	2N3831 O205AD) 17-Jul-02	PDF
2N3742 Abstract: No abstract text available Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) VCER ICBO @ µA) (µ VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) ICEO ICES ICEV ICER MAX fT (MHz) Cob (pF) TYP ton (ns) toff (ns) (dB) NF	Original	2N3724A 2N3725A 2N3734 2N3735 2N3742 2N3743 2N3762 2N3763 2N3764 2N3830	PDF
BSV12 Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252 Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) ICEO ICES ICEV ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) TYP TYP TYP TYP TYP	Original	2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
bu808 equivalent Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143 Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200	Original	2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143	PDF
2N3444 Abstract: 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501 2N3502 Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) (V) ICEO ICES ICEV ICER MAX Cob (pF) ton (ns) toff (ns) NF (dB) TYP TYP TYP TYP TYP	Original	2N3444 2N3467 2N3468 2N3868 2N3923 2N3945 2N4000 2N4001 24-November 2N3444 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501 2N3502	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
UM9C Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651 Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma	OCR Scan	DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651	PDF
2N5146 Abstract: 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468 SP3725QDB Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts	OCR Scan	SP3763Q0 SP3763QF O-116 SP3725QDB SP34G7ADB O-116 VC2N3737 2N3762 2N3763 2N5146 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468	PDF
2N4122 Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716 Text: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741	OCR Scan	DDD44 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N4122 2N4121 2N4134 2n3771 2N4080 2N4135	PDF
n4300 Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711 Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.	OCR Scan	TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419	PDF
2N3633 Abstract: No abstract text available Text: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 \| NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min	OCR Scan	2N2242 2N2368 2N2369 2N2369A 2N2410 2N2475 2N2481 2N2501 2N2651 2N2710 2N3633	PDF

TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C	PDF
transistor 2N3907 Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor" Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A	OCR Scan	2N3790X 2N3791 2N3791-SM 2N3792 2N3792-SM 2N3792LP 2N3799 2N3799X transistor 2N3907 t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"	PDF
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29	PDF
Untitled Abstract: No abstract text available Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® C (V) (m A) >CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) TY P *TY P	OCR Scan	2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118	PDF
2N3806 2N3906 Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D Text: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^	OCR Scan	2N3763 2N3764 2N3765 2N3766 2N3767 2N3771 2N3772 2N3773 2N3782 2N3789 2N3806 2N3906 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D	PDF
transistor t05 Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697 Text: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200	OCR Scan	TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 N3830 transistor t05 TIS60m 2N1889 2N1890 2N1893	PDF
Untitled Abstract: No abstract text available Text: Small Signal Transistors V (V) (V) (M ) h :E (V) ic (m A) (V) VCE(SA (V) (m A) O VCBO v CEO v EBO ICBO ® v CBO P DESCRIPTION TYPE NO. < o m TO-39 Case (Continued) ‘ 'CEO VCER r (MHz) C0 b on ‘ o ff NF (PF) (ns) (ns) (dB) •TYP TYP TYP TYP	OCR Scan	2N3444 2N3467 2N3923 2N4000 2N3945 2N4001	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
Untitled Abstract: No abstract text available Text: _ _ ADVANCED 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR SEMI CONDUCTOR - flâ D Ë loaSÔ B S 4 82D 0 0 0 4 4 0000044 D S IL IC O N _ _ _ _ « _ _T Ü A P J S iS T O fiS Pd @ Tc=25°C DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734	OCR Scan	2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N3743	PDF
NPN transistor 2n2222A plastic package to116 Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467 Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package	OCR Scan	SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467	PDF

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2N3831 Search Results

2N3831 Price and Stock

Susumu Co Ltd RG2012N-3831-C-T5

Susumu Co Ltd RG2012N-3831-D-T5

Susumu Co Ltd RG2012N-3831-W-T1

Susumu Co Ltd RG2012N-3831-P-T1

Susumu Co Ltd RG2012N-3831-B-T5

2N3831 Datasheets (19)

2N3831 Datasheets Context Search

2N3831

Untitled

Untitled

2N3742

BSV12

SSP35n03

bu808 equivalent

2N3444

IC HXJ 2038

UM9C

2N5146

2N4122

n4300

2N3633

TRIAC 97A6

transistor 2N3907

AL102 ATES

Untitled

2N3806 2N3906

transistor t05

Untitled

aeg diode Si 61 L

Untitled

NPN transistor 2n2222A plastic package to116