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    2N5B82 Search Results

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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    2NS880

    Abstract: 2N6878 2N5880 2n5879 power amplifier circuit 2N5879 2N5882 2n5881 2N5880 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N 5879 Com plem entary Silicon High-Pow er TVansistors 2N 5880* NPN . . . designed for general-purpose power amplifier and switching applications. 2N5881 • Collector-Emitter Sustaining Voltage — VCEO sus - 60 Vdc (Min) — 2N5879,2N5881


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    2N5879 2N5881 2N5880 2N5882 2N6878 2N5881 2NS880 2N5B82 2n5879 power amplifier circuit 2N5882 2N5880 motorola PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF