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    2N645 Search Results

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    2N645 Price and Stock

    Kycon Inc GMX-SMT2-N-64-50

    FL/SMT M/JACK LOW/PROF RT<6P4C B
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    DigiKey GMX-SMT2-N-64-50 Tray 240
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    • 1000 $1.43158
    • 10000 $1.43158
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    Mouser Electronics GMX-SMT2-N-64-50
    • 1 $2.02
    • 10 $1.64
    • 100 $1.64
    • 1000 $1.3
    • 10000 $0.992
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    Sager GMX-SMT2-N-64-50 1
    • 1 $1.49
    • 10 $1.42
    • 100 $1.25
    • 1000 $1.12
    • 10000 $1.12
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    Kycon Inc GTVX-SMT2-N-64-50

    MOD JACK SMT 6P4C TOP ENTRY W/O
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GTVX-SMT2-N-64-50 Tray 3,000
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    Sager GTVX-SMT2-N-64-50 3,000
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    • 10000 $1.29
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    Kycon Inc GMX-SMT2-N-64-50TR

    FL/SMT M/JACK LOW/PROF RT<6P4C B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GMX-SMT2-N-64-50TR Reel 2,400
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    Mouser Electronics GMX-SMT2-N-64-50TR
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    • 1000 $1.09
    • 10000 $1.03
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    Sager GMX-SMT2-N-64-50TR 2,400
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    Kycon Inc GTVX-SMT2-N-64-50TR

    MOD JACK SMT 6P4C TOP ENTRY W/O
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GTVX-SMT2-N-64-50TR Reel 3,060
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    • 10000 $1.07888
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    Sager GTVX-SMT2-N-64-50TR 3,060
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    InterFET Corporation 2N6453

    JFETs JFET N-Channel -20V Low Noise
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N6453 188
    • 1 $10.68
    • 10 $9.41
    • 100 $8.14
    • 1000 $6.76
    • 10000 $6.76
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    2N645 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N645 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N645 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N645 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N645 Unknown GE Transistor Specifications Scan PDF
    2N645 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N645 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N645 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N645 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N645 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N645 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N645 Unknown Vintage Transistor Datasheets Scan PDF
    2N645 RCA RCA Transistor and Diode Data Scan PDF
    2N6450 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N6450 Crystalonics Transistor Data Book 1976 Scan PDF
    2N6450 InterFET N-Channel J-FETs Scan PDF
    2N6450 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6450 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6450 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6450 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6450 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N645 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6451

    Abstract: 2N6452
    Text: Databook.fxp 1/13/99 2:09 PM Page B-25 B-25 01/99 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers At 25°C free air temperature:


    Original
    2N6451, 2N6452 2N6451 2N6451 2N6452 PDF

    IF3601

    Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
    Text: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


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    2N6449, 2N6450 2N6449 IF3601 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320 PDF

    2n6453

    Abstract: 2N6454 B-26
    Text: Databook.fxp 1/13/99 2:09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers At 25°C free air temperature:


    Original
    2N6453, 2N6454 2N6453 NJ132L 2n6453 2N6454 B-26 PDF

    2n6449

    Abstract: 2N6450
    Text: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    2N6449, 2N6450 2N6449 2n6449 2N6450 PDF

    2SB553Y

    Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


    Original
    2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553 PDF

    str f 6454

    Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
    Text: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453


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    2N64B1 2N6454 2N6451, 2N6453) 2N6453, 2N6454) str f 6454 str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 PDF

    Untitled

    Abstract: No abstract text available
    Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0


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    2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N64S4 NF5101 2N6449 2N6450 PDF

    Untitled

    Abstract: No abstract text available
    Text: B 24 9-97 2N6449, 2N6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • HIGH VOLTAGE Absolute maximum ratings at TA = 25°C 2N6449 -3 0 0 V -2 0 0 V Reverse Gate Drain Voltage -3 0 0 V -2 0 0 V Continuous Forward Gate Current Continuous Device Power Dissipation


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    2N6449, 2N6450 2N6449 Q00G744 PDF

    2N6449

    Abstract: CISS2 2N6450
    Text: HIGH VOLTAGE 2N6449 2N6450 SILICON E PI TA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 5 5 9 , PG. 6 0 TO-39 Package • HIGH BV qss • • •300V MIN 2N6449 • HIGH POWER RATING . . . 5W ELECTRICAL DATA 00370 350dia 0 ^ 1 5 DIA


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    2N6449 2N6450 2N6449) 2N6450 -100V, -10juA, 300/us, CISS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 9 -9 7 B 25 2N6451, 2N6452 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • LOW NOISE, HIGH GAIN A bsolute m axim um ratin gs at TA = 25° C AMPLIFIERS • LOW NOISE PREAMPLIFIERS 2N6451 2N6452 Reverse Gate Source Voltage


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    2N6451, 2N6452 2N6451 NJ132L PDF

    2n6449

    Abstract: No abstract text available
    Text: TELEDYNE Eö E COMPONENTS Ö H T b a a D ÜQ Üfc.552 T -\ S HIGH VOLTAGE 1 2N6449 2N6450 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 559 TO -39 Package • HIGH BVqss - • • 300V MIN 2N6449


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    2N6449 2N6450 2N6449) 2N6450 -10juA, 300jus. PDF

    2N6449

    Abstract: No abstract text available
    Text: TYPES 2N6449, 2N6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 1 2 0 0 3 , M A Y 1 9 7 3 -R E V IS E D S E P T E M B E R 1 9 7 6 HIGH-VOLTAGE FIELD-EFFECT TRANSISTORS • High V BR GSS . . . 300 V Min (2N6449) • High Dissipation Capability . . . 5 W


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    2N6449, 2N6450 2N6449) 2N6449 PDF

    2N6454

    Abstract: No abstract text available
    Text: B 26 9-97 2N 6453, 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • LOW NOISE, HIGH GAIN AMPLIFIERS • LOW NOISE PREAMPLIFIERS Absolute maximum ratings at Ta = 25*C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


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    2N6454 2N6453 2N6454 PDF

    2N645

    Abstract: 2N6449
    Text: HIGH VOLTAGE 2N6449 2N6450 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY559 HIGH BVgss - • • 300V MIN 2N6449 HIGH POWER RATING . . . 5W ELECTRICAL DATA TO-39 Package 0.3SO =OIA Ö37Ö ABSOLUTE M A X IM U M RATINGS PARAMETER SYMBOL


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    GEOMETRY559 2N6449 2N6450 2N6449) 2N6450 300/is, 2N645 PDF

    2N4119

    Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
    Text: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0


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    2N5556 2N5557 2N5558 2N6451 2N6452 NF5301 2N6449 2N6450 2N4119 NF5102 NF5103 2N6453 PDF

    2N5036

    Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N5036 TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165 PDF

    M-8124

    Abstract: usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 M-8124 usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1 PDF

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2sa648 transistor usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538 PDF

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m PDF

    SFT307

    Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302 PDF

    2N1103

    Abstract: CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor PDF

    2n1620

    Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E


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    PDF

    2SC114 transistor

    Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114 PDF

    Untitled

    Abstract: No abstract text available
    Text: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj


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    2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N6454 NF5101 NF5102 NF5103 PDF