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    2N652 Price and Stock

    Rochester Electronics LLC 2N6520RL1

    TRANS PNP 350V 0.5A TO92
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    Rochester Electronics LLC 74HC02N,652

    IC GATE NOR 4CH 2-INP 14DIP
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    DigiKey 74HC02N,652 Tube 1,110
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    NXP Semiconductors 74HC02N,652

    IC GATE NOR 4CH 2-INP 14DIP
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    Bristol Electronics 74HC02N,652 100
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    Rochester Electronics 74HC02N,652 37,465 1
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    NXP Semiconductors 74HC32N,652

    IC GATE OR 4CH 2-INP 14DIP
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    Vyrian 74HC32N,652 20
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    Rochester Electronics LLC 74HC112N,652

    IC FF JK TYPE DUAL 1BIT 16DIP
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    DigiKey 74HC112N,652 Tube 620
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    2N652 Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N652 Central Semiconductor Germanium PNP Transistor 45 Volts, 200mW Original PDF
    2N652 Central Semiconductor Leaded Devices Scan PDF
    2N652 Germanium Power Devices Germanium PNP Small Signal Transistors Scan PDF
    2N652 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N652 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N652 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N652 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N652 Unknown Vintage Transistor Datasheets Scan PDF
    2N652 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N652 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N652 Unknown GE Transistor Specifications Scan PDF
    2N652 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N652 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N652 Semitronics Alloy-junction Germanium Transistors Scan PDF
    2N6520 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    2N6520 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    2N6520 Micro Commercial Components TRANS GP BJT PNP 350V 0.5A 3TO-92 Original PDF
    2N6520 Micro Commercial Components High Voltage Transistor 625mW Original PDF
    2N6520 On Semiconductor 2N6520 - TRANSISTOR 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal Original PDF
    2N6520 On Semiconductor High Voltage Transistors Original PDF

    2N652 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6520

    Abstract: 2N6520 DIODES 2N6515 2N6515RLRM 2N6516 2N6517 2N6517RLRA 2N6517RLRP 2N6519 2N6520RLRA
    Text: 2N6515, 2N6517, 2N6520 High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N6517 2N6515 2N6520 Unit Collector − Emitter Voltage


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    PDF 2N6515, 2N6517, 2N6520 2N6517 2N6515 2N6516, 2N6519, 2N6520 2N6520 DIODES 2N6515RLRM 2N6516 2N6517 2N6517RLRA 2N6517RLRP 2N6519 2N6520RLRA

    2N6515

    Abstract: 2N6516 2N6517 2N6519 2N6520
    Text: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520


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    PDF 2N6515 2N6517 2N6520 2N6515, 2N6516, 2N6519, 2N6515 2N6516 2N6517 2N6519 2N6520

    2N6520 DIODES

    Abstract: 2N6515 2N6516 2N6517 2N6519 2N6520
    Text: High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517


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    PDF 2N6515 2N6517 2N6519 2N6520 2N6515, 2N6516, 2N6520 DIODES 2N6515 2N6516 2N6517 2N6519 2N6520

    2N6517

    Abstract: 2N6515 2N6516 2N6519 2N6520
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF 2N6515, 2N6519 2N6516, 2N6520 2N6517 2N6515 2N6516 2N6519 2N6517 2N6520

    2N 6517 TRANSISTOR

    Abstract: 6517 transistor
    Text: 2N6517 2N6517 High Voltage Transistor • • • • Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC max =625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF 2N6517 625mW 2N6520 2N6515 2N6517 O-92-3 2N6517BU 2N6517CBU 2N6517CTA 2N 6517 TRANSISTOR 6517 transistor

    2N6520BU

    Abstract: 2N6520 2N6520TA
    Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF 2N6520 -350V 625mW 2N6517 2N6520 O-92-3 2N6520BU 2N6520TA

    2N6520

    Abstract: No abstract text available
    Text: 2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High voltage transistors TO-92 G H Collector J  A REF. D A B C D E F G H J K B


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    PDF 2N6520 02-Sep-2010 -20mA, -30mA, -10mA, 20MHz 2N6520

    2N6521

    Abstract: No abstract text available
    Text: 2N6521 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k


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    PDF 2N6521 Freq175M

    2n6520

    Abstract: No abstract text available
    Text: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520


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    PDF 2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515

    2N6517

    Abstract: 2N6520
    Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF 2N6520 -350V 625mW 2N6517 2N6517 2N6520

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use FMMT558 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR 2N6520 ISSUE 1 – MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


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    PDF -100mA FMMT558 2N6520 -250V, -10mA, -20mA, -30mA, -50mA,

    2N6515

    Abstract: 2N6517 2N6520
    Text: 2N6517 2N6517 High Voltage Transistor • • • • Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC max =625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF 2N6517 625mW 2N6520 2N6515 2N6517 2N6520

    CEB npn

    Abstract: 2n6518
    Text: 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 NPN PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series types are complementary silicon transistors designed for high voltage driver and amplifier


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    PDF 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 2N6515, CEB npn

    Untitled

    Abstract: No abstract text available
    Text: 2N6520 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)50m


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    PDF 2N6520 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: 2N6525 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)40 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0m¥x @V(CBO) (V) (Test Condition)32


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    PDF 2N6525

    transistor 2n6517

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 Features High Voltage l Through Hole Package l 150oC Junction Temperature


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    PDF 2N6515, 2N6517 2N6519, 2N6520 625mW 150oC 2N6515 2N6519 2N6517, 2N6520 transistor 2n6517

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6517 TRANSISTOR NPN 1. EMITTER FEATURES z Complement To 2N6520 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


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    PDF 2N6517 2N6520 100mA 20MHz

    2N6520

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N6520 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 0.625 2. BASE W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V V(BR)CBO : -350


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    PDF 2N6520 width300 2N6520

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent Base C urrent C ollecto r D issipation


    OCR Scan
    PDF 2N6520

    2N1378

    Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145


    OCR Scan
    PDF 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001

    2N6516

    Abstract: 2n6520 2n6517 2N6515
    Text: MAXIMUM RATINGS Rating 2N6516 2N6515 2N6519 Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage CCBO Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 v EBO NPN 2N6517 2N6520 U nit 250 300 350 Vdc 250 300 350 Vdc 2N6515 thru 2N6517^ Vdc PNP


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    PDF 2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6516 2N6515 2N6519

    2N65T

    Abstract: 2N6515 CEB npn 10PA 20MHZ 2N6516 2N6517 2N6518 2N6519 2N6520
    Text: 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP ♦I COMPLEMENTARY S IL IC O N HIGH VOLTAGE TRANSISTORS JED EC TO-92 CASE D ESC RIPTIO N The CENTRAL SEMICONDUCTOR 2N6515 N P N , p le m e n ta ry s i l i c o n t r a n s i s t o r s d e s ig n e d MAXIMUM RATINGS


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    PDF 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 2N6515 2N65T CEB npn 10PA 20MHZ

    2N651

    Abstract: germanium af transistors germanium audio 2N652 2N652A t05 case Germanium power 2N651A GERMANIUM PNP LOW POWER TRANSISTORS germanium
    Text: 2N651 2N651A 2N652 2N652A t e n tra i se m ico n d u cto r Corp. C e n tra l S e m ico n d u cto r C orp. GERMANIUM PNP TRANSISTOR kS VOLTS, 200 mW JEDEC T0-5 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N651,A 2N652.A Series are Germanium Alloy PNP Milliwatt


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    PDF 2N651 2N651A 2N652 2N652A 100mA, 000tt 1000i2, germanium af transistors germanium audio 2N652A t05 case Germanium power GERMANIUM PNP LOW POWER TRANSISTORS germanium

    2n6520

    Abstract: 2N6517 bc250 2n6519
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage


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    PDF 2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515 2N6519 2N6520 1/2MSD7000 bc250 2n6519