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Microchip Technology Inc 2N6660 MOSFET N-CH 60V 410MA TO39
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DigiKey	2N6660	Bag	2,405		1	1 $15.9 10 $15.9 100 $15.9 1000 $15.9 10000 $15.9	Buy Now
Avnet Americas	2N6660	Bag		6 Weeks	500	1 $14.42888 10 $14.42888 100 $14.2044 1000 $14.2044 10000 $14.2044	Buy Now
Mouser Electronics	2N6660		350			1 $15.9 10 $15.9 100 $14.57 1000 $14.04 10000 $14.04	Buy Now
Verical	2N6660		500		500	1 - 10 - 100 - 1000 $14.25 10000 $14.25	Buy Now
	2N6660		134		1	1 $14.25 10 $14.25 100 $14.25 1000 $14.25 10000 $14.25	Buy Now
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Arrow Electronics	2N6660		500	6 Weeks	500	1 - 10 - 100 - 1000 $14.25 10000 $14.25	Buy Now
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Newark	2N6660	Bulk			500	1 - 10 - 100 $13.6 1000 $13.6 10000 $13.6	Buy Now
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Microchip Technology Inc	2N6660	Bag	515	6 Weeks		1 $15.9 10 $15.9 100 $13.2 1000 $12.13 10000 $11.54	Buy Now
Onlinecomponents.com	2N6660		59			1 $17.1 10 $17.1 100 $13.63 1000 $12.83 10000 $12.83	Buy Now
Ameya Holding Limited	2N6660		325			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NAC	2N6660	Bag	1,000		1	1 $16.04 10 $16.04 100 $14.78 1000 $13.7 10000 $13.7	Buy Now
Avnet Silica	2N6660			8 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	2N6660	Bulk	30			1 $11 10 $10.9 100 $10.9 1000 $10.9 10000 $10.9	Buy Now
EBV Elektronik	2N6660			7 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N6660		59			1 $17.1 10 $17.1 100 $13.63 1000 $12.83 10000 $12.83	Buy Now
Microchip Technology Inc 2N6661 MOSFET N-CH 90V 350MA TO39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6661	Bag	110		1	1 $15.9 10 $15.9 100 $15.9 1000 $15.9 10000 $15.9	Buy Now
Avnet Americas	2N6661	Bag	3	6 Weeks	500	1 $14.42888 10 $14.42888 100 $14.2044 1000 $14.2044 10000 $14.2044	Buy Now
Mouser Electronics	2N6661		561			1 $15.9 10 $15.9 100 $14.57 1000 $14.04 10000 $14.04	Buy Now
Verical	2N6661		566		3	1 - 10 $23.049 100 $18.135 1000 $17.524 10000 $17.524	Buy Now
	2N6661		364		364	1 - 10 - 100 - 1000 $30.2962 10000 $30.2962	Buy Now
	2N6661		218		1	1 $14.25 10 $14.25 100 $14.25 1000 $14.25 10000 $14.25	Buy Now
	2N6661		161		1	1 $13.11 10 $13.11 100 $13.11 1000 $13.11 10000 $13.11	Buy Now
Arrow Electronics	2N6661		218	6 Weeks	1	1 $14.25 10 $14.25 100 $14.25 1000 $14.25 10000 $14.25	Buy Now
	2N6661		161	6 Weeks	1	1 $13.11 10 $13.11 100 $13.11 1000 $13.11 10000 $13.11	Buy Now

Newark	2N6661	Bulk	223		1	1 $16.54 10 $15.61 100 $14.59 1000 $14.59 10000 $14.59	Buy Now
RS	2N6661	Bulk		14 Weeks	500	1 - 10 - 100 - 1000 $16.85 10000 $14.32	Get Quote
Microchip Technology Inc	2N6661	Bag	1,300	6 Weeks		1 $15.9 10 $15.9 100 $13.2 1000 $12.13 10000 $11.54	Buy Now
Onlinecomponents.com	2N6661		726			1 $17.73 10 $17.73 100 $13.95 1000 $13.08 10000 $13.08	Buy Now
TME	2N6661				1	1 $17.8 10 $16.5 100 $15.6 1000 $15.6 10000 $15.6	Get Quote
Ameya Holding Limited	2N6661		251			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NAC	2N6661	Bag	2,000		1	1 $16.04 10 $16.04 100 $14.78 1000 $13.7 10000 $13.7	Buy Now
Avnet Silica	2N6661			8 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	2N6661			7 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N6661		726			1 $17.73 10 $17.73 100 $13.95 1000 $13.08 10000 $13.08	Buy Now
STMicroelectronics 2N6668 TRANS PNP DARL 80V 10A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6668	Tube			2,000	1 - 10 - 100 - 1000 - 10000 $0.60294	Buy Now
onsemi 2N6668 POWER 8A 80V DARLINGTON PNP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6668	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix 2N6660 MOSFET N-CH 60V 990MA TO205AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6660	Tube			100	1 - 10 - 100 $17.5 1000 $17.5 10000 $17.5	Buy Now
Quest Components	2N6660		5			1 $22.455 10 $19.96 100 $19.96 1000 $19.96 10000 $19.96	Buy Now

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2N666 Datasheets (174)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6660	Defense Supply Center Columbus	N-Channel FET	Original	PDF
2N6660	Microchip Technology	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 0.41A TO39-3	Original	PDF
2N6660	Motorola	FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor	Original	PDF
2N6660	Unknown	N-channel, High Frequency Power Transistor	Original	PDF
2N6660	Philips Semiconductors	N-Channel Vertical DMOS Transistor	Original	PDF
2N6660	Supertex	Metal oxide N-channel FET, Enhancement Type	Original	PDF
2N6660	Supertex	N-Channel Enhancement-Mode Vertical DMOS FETs	Original	PDF
2N6660	Vishay Siliconix	N-Channel Enhancement-Mode MOSFET Transistors	Original	PDF
2N6660	Vishay Telefunken	TRANS MOSFET N-CH 60V 1.1A 3TO-205AD	Original	PDF
2N6660	General Electric	Power Transistor Data Book 1985	Scan	PDF
2N6660	Intersil	Data Book 1981	Scan	PDF
2N6660	Motorola	Switchmode Datasheet	Scan	PDF
2N6660	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6660	Motorola	TMOS SWITCHING FET TRANSISTORS	Scan	PDF

2N6660	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6660	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2N6660	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N6660	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6660	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6660	Unknown	FET Data Book	Scan	PDF

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2N666 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6660 JANTX Abstract: No abstract text available Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	PDF	2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 2N6660 JANTX
2N6668 Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100 Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —	Original	PDF	2N6667 2N6668 220AB 2N6387, 2N6388 r14525 2N6667/D 2N6668 2N6667 1N5825 2N6387 2N6388 MSD6100
2N6661 Abstract: VN88AFD Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS	Original	PDF	2N6661/VN88AFD 2N6661 VN88AFD 08-Apr-05 2N6661 VN88AFD
2N6660 Abstract: No abstract text available Text: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	PDF	2N6660 2N6660 DSPD-3TO39N2, A070808. DSFP-2N6660 A072808
2N6668 Abstract: No abstract text available Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1	Original	PDF	2N6668 O-220 2N6668
TN2524 Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110 Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)	Original	PDF	2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
2N6660 Abstract: LE17 Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	PDF	2N6660 725mW 25ent O-205AD) 2N6660 LE17
2N6660CSM4 Abstract: No abstract text available Text: 2N6660CSM4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)	Original	PDF	2N6660CSM4 MO-041BA) 2N6660CSM4
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS ON = 4.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	PDF	2N6661 40mW/ment O-205AD)
Untitled Abstract: No abstract text available Text: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	PDF	2N6661JAN/JANTX/JANTXV 2N6661/VN88AFD VNDQ09 P-37515--Rev. 04-July-94
Untitled Abstract: No abstract text available Text: 2N6661 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200)	Original	PDF	2N6661 O-205AD)
Untitled Abstract: No abstract text available Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	PDF	2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	PDF	2N6660 40mW/ment O-205AD)
2N6661 Abstract: No abstract text available Text: SEME 2N6661 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Switching Regulators	Original	PDF	2N6661 2N6661

2N6668 Abstract: No abstract text available Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM	Original	PDF	2N6668 O-220 2N6668
transistor t 2180 Abstract: power ic 501 amp 2N6668 Text: 2N6668 Darlington Power Transistor Plastic Medium-Power Silicon Transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage	Original	PDF	2N6668 transistor t 2180 power ic 501 amp 2N6668
2N6660 Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711 Text: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh	Original	PDF	2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 2N66591MPF6659 2N6660/2N6661 MPF6660/MPF6661 O-205AD MPF6660 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
2N6660 Abstract: s0437 2N6660 siliconix VQ1004J Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5	OCR Scan	PDF	2N6660, VQ1004J/P 2N6660 VQ1004J/P S-04379-- 16-Jul-01 s0437 2N6660 siliconix VQ1004J
Untitled Abstract: No abstract text available Text: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)	OCR Scan	PDF	2N6661 O-205AD) MIL-S-19500/547A.
2N6661 Abstract: 2N6660 2N6661 transistor 2N6659 max 1988 Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.	OCR Scan	PDF	2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988
2N6155 Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64 Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	PDF	SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64
4900 SIEMENS Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	PDF	SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A
MIL I 23659 Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405 Text: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B	OCR Scan	PDF	O-220 T0-220 O-22C) MIL I 23659 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
Untitled Abstract: No abstract text available Text: m 2N6660 \ \ MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS A @ Tc = 25 °C 800 m A @ T c = 100 °C VDs= 60 V VGS = ±20 V 6.25 W @ 25 °C 2.5 W @ 100 °C	OCR Scan	PDF	2N6660 2N6660

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2N666 Datasheets (174)

2N666 Datasheets Context Search

2N6660 JANTX

2N6668

2N6661

2N6660

2N6668

TN2524

2N6660

2N6660CSM4

Untitled

Untitled

Untitled

Untitled

Untitled

2N6661

2N6668

transistor t 2180

2N6660

2N6660

Untitled

2N6661

2N6155

4900 SIEMENS

MIL I 23659

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