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    2N697 EQUIVALENT Search Results

    2N697 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N697 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 2n697

    Abstract: 2N697S 2N696S 2N697 2N696 TRANSISTOR 2n696
    Text: The documentation and process conversion measures necessary to comply with this amendment shall be completed by 16 May, 2000. MIL-S-19500/99E AMENDMENT 3 16 February, 2000 SUPERSEDING AMENDMENT 2 15 July 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,


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    PDF MIL-S-19500/99E 2N696, 2N697, 2N696S 2N697S MIL-S-19500/99E, MIL-S-19500/99E TRANSISTOR 2n697 2N697S 2N697 2N696 TRANSISTOR 2n696

    SE 442

    Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
    Text: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­


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    PDF MlL-S-19500/99E L-S-19500/99D 2N696 2N697 500/99D. SE 442 MARKING M1W TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent

    2N697 equivalent

    Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10


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    PDF BFX30 N2904A BFX37 2N2605* BFX65 BFX84 2N1711 BFX85 2N171-1 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 DH3467CD BFY39 BFY50 equivalent

    BSY39

    Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent
    Text: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A


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    PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N697A 2N698 BSY51 2N2218 BSY39 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent

    SP3725QDB

    Abstract: 2N5146 2N3444 2N1711 equivalent 2N2904A MOTOROLA 2N3763 MOTOROLA 2N3252 MOTOROLA transistor 2n1711 2N3244 2N3252
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts


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    PDF SP3763Q0 SP3763QF O-116 SP3725QDB SP34G7ADB O-116 BSY51 2N2218 BSY52 2N5146 2N3444 2N1711 equivalent 2N2904A MOTOROLA 2N3763 MOTOROLA 2N3252 MOTOROLA transistor 2n1711 2N3244 2N3252

    2N3914

    Abstract: 2n3219 2N4260 2N3910 2n3914 equivalent 2N3913 2N697 equivalent 2N915 BFY39 BSY39
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Am bient h f e @>c VCE V e B Volts Volts M in/M ax mA II Type Electrical Characteristics @ 25° C VcE (S at) @ Volts m A /m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF Max 2N943 PNP


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    PDF 2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BSY51 2N3914 2n3219 2N4260 2N3910 2n3914 equivalent 2N3913 2N697 equivalent 2N915 BFY39 BSY39

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Text: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


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    PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 BC140 equivalent BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA

    EQUIVALENT TRANSISTOR bc109c

    Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent

    BSy38

    Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 16NPN BSY51 BSy38 Motorola* 2n708 2N1711 MOTOROLA DH3467CD BSY39 SP3725 SP3725QDB tch98

    2N2270 equivalent

    Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


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    PDF 2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/15NPN BSY51 2N2270 equivalent 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76

    2n2219 equivalent

    Abstract: BFY39 2N2219A BSX45 2N2905a equivalent BSY39 N3343 2N1132B SP3725QDB equivalent 2N2219 BSX88
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max


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    PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 2n2219 equivalent BFY39 2N2219A BSX45 2N2905a equivalent BSY39 N3343 SP3725QDB equivalent 2N2219 BSX88

    2N1711 MOTOROLA

    Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
    Text: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency


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    PDF SP918AF SP918BF SP2222AF SP2223AF SP2484F SP2907AF SP2946F BSY51 2N2218 BSY52 2N1711 MOTOROLA DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 bsx46 equivalent

    equivalent transistor 2N1711

    Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708

    equivalent transistor 2N1711

    Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 equivalent transistor 2N1711 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR

    BC107 equivalent transistors

    Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801

    BC107 equivalent transistors

    Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors 2N2475

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


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    PDF BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62

    2N4260

    Abstract: F012 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV BV BV Case hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75


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    PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 F012

    NPN C460

    Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
    Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25


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    PDF 2N3724A 2N3725A 2N3244 BF257 BS9300 2N2219A 2N2221 2N2222 NPN C460 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 CV7496

    BC140 equivalent

    Abstract: 2n4036 equivalent BAW66 Bc161 marking 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2n4036 equivalent BAW66 Bc161 marking

    BC140 equivalent

    Abstract: 2N3053 equivalent 2n4036 equivalent equivalent to BC177 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2N3053 equivalent 2n4036 equivalent equivalent to BC177

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


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    PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent