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    2N7002 FAIRCHILD Search Results

    2N7002 FAIRCHILD Datasheets Context Search

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    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    2N7000

    Abstract: 2N700 7002A 2n7002 FE -2N7002 "ON Semiconductor" 2N7002
    Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


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    2N7000 2N7002 NDS7002A 400mA 2N7002A 2N700 7002A FE -2N7002 "ON Semiconductor" 2N7002 PDF

    7002N

    Abstract: 2N7000 S7002
    Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


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    2N7000 2N7002 NDS7002A 400mA 2N7002A 7002N S7002 PDF

    fairchild 2N7002 MARKING

    Abstract: 2N7000-D nds7000
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA O-92-3 AN-42037: ML4423 fairchild 2N7002 MARKING 2N7000-D nds7000 PDF

    2N7002

    Abstract: 2N7000
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA PDF

    2n7000

    Abstract: 100C 2N700 2N7002 CBVK741B019 NDS7002A PN2222N
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA 100C 2N700 CBVK741B019 NDS7002A PN2222N PDF

    2N7000

    Abstract: 2N7002 2N700 nds7000 2N7002A 2n7000 equivalent FAIRCHILD 2N7002 100C NDS7002 NDS7002A
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been


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    2N7000 2N7002 NDS7002A 400mA OT-23, NDS7002A 2N700 nds7000 2N7002A 2n7000 equivalent FAIRCHILD 2N7002 100C NDS7002 PDF

    2N7000 021

    Abstract: 2N7000 MOSFET D3000 2n7000 Mosfet 2n7000 2n7000 data sheet nds7000 2n7000 equivalent 2n7002-1 2N700
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA 2N7000 021 2N7000 MOSFET D3000 Mosfet 2n7000 2n7000 data sheet nds7000 2n7000 equivalent 2n7002-1 2N700 PDF

    2n7000

    Abstract: 2N7002 2N700 100C CBVK741B019 NDS7002A PN2222N 2N700 mosfet
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA 2N700 100C CBVK741B019 NDS7002A PN2222N 2N700 mosfet PDF

    2N7000

    Abstract: 2N700 2N7002 2n7000 equivalent mosfet 2n7000 100C NDS7002A "ON Semiconductor" 2N7002 nds7000 2n7002 12
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA 2N700 2n7000 equivalent mosfet 2n7000 100C NDS7002A "ON Semiconductor" 2N7002 nds7000 2n7002 12 PDF

    2N700

    Abstract: 2n7000 100C 2N7002 CBVK741B019 NDS7002A PN2222N "ON Semiconductor" 2N7002 2N700 mosfet
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA 2N700 100C CBVK741B019 NDS7002A PN2222N "ON Semiconductor" 2N7002 2N700 mosfet PDF

    2N7000

    Abstract: fairchild 2n7000 2N7002 2N700 "ON Semiconductor" 2N7002 2n7000 equivalent 100C NDS7002A 2N700 mosfet 2N7000/BS170L
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


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    2N7000 2N7002 NDS7002A 400mA fairchild 2n7000 2N700 "ON Semiconductor" 2N7002 2n7000 equivalent 100C NDS7002A 2N700 mosfet 2N7000/BS170L PDF

    2N7002

    Abstract: 2N7000 FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7002A 2N7000 MOSFET 100C NDS7002A
    Text: Novem ber 1995 FAIRCHILD M IC D N D U C T O R 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


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    2N7000 2N7002 NDS7002A 400mA OT-23, NDS7002A 2N7002A FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7000 MOSFET 100C PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


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    2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    N-CHANNEL MOSFET 30V 2A SOT-23

    Abstract: N2 SOT-23 capacitor 470uf 25v 470uF/ 25V capacitor electrolytic capacitor 470uF 25v 6930A 2N7002 SOT-23 Electrolytic Capacitor 25V 470uf 470uF 25V FAIRCHILD 2N7002
    Text: DVD 12.6V to 15.4V VIN C3 2.2uF 10V C2 0.1uF 9 R1 75k 2 16 VCC 15 VL IN BST COMP C1 2.2nF SHDN D1 CMPSH-3 U1 MAX1967 DH LX DL N2 2N7002 GND C5 390uF 25V MV-AX 14 13 C4 0.1uF N1 1/2 FDS 6930A 12 N1 1/2 FDS 6930A 11 10 L1 22uH CDRH127 -220 3.3V@2A VOUT C6 470uF


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    MAX1967 2N7002 390uF CDRH127 470uF 50mVpp LMK212BJ225MG 390uF 2MV390AX 470uF N-CHANNEL MOSFET 30V 2A SOT-23 N2 SOT-23 capacitor 470uf 25v 470uF/ 25V capacitor electrolytic capacitor 470uF 25v 6930A 2N7002 SOT-23 Electrolytic Capacitor 25V 470uf 470uF 25V FAIRCHILD 2N7002 PDF

    2n7000

    Abstract: 2N7002 2N700 2N700 mosfet 2n7002 12 2N7000 MOSFET NDS7002A 2N7002 60V SOT-23 100C 1075Q
    Text: F A I R C H I L D S E M IC O N D U C T O R N o ve m b e r 1995 tm 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor G en eral D escrip tio n F eatures These N-Channel enhancem ent m ode field effect transistors • High density cell design for low RDS ON .


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    2N7000 2N7002 NDS7002A 400mA NDS7000A OT-23, 2N700 2N700 mosfet 2n7002 12 2N7000 MOSFET NDS7002A 2N7002 60V SOT-23 100C 1075Q PDF

    LTC4100GN

    Abstract: DC512 LTC4100EGN LED LN1251C LTC4100 tp10 d7 MBRM140T3 Si4431ADY Si4925DY 892NAS-100M
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT DC512 SMART BATTERY CHARGER BOARD LTC4100 DESCRIPTION Demonstration circuit DC512 is a single battery switching buck charge controller featuring the LTC4100. The recommended input power is 15 to 20V at 3.5Amps. A


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    DC512 LTC4100 DC512 LTC4100. TP1-TP10 TP12-TP14 1/16W LTC4100GN LTC4100EGN LED LN1251C LTC4100 tp10 d7 MBRM140T3 Si4431ADY Si4925DY 892NAS-100M PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    CAPACITOR 10k 3KV

    Abstract: transistor 2n7002 P05NZ-054 MAX8729 MAX8729EVKIT C0603C104K3RAC C0603C105K8RAC C1608X7R1E104K C3216X7R1E225K 1348-T006
    Text: 19-3933; Rev 0; 1/06 MAX8729 Evaluation Kit The MAX8729 evaluation kit EV kit is an assembled and tested PC board that demonstrates the MAX8729 low-cost multiple CCFL backlight controller. Lamp brightness is adjustable by an on-board potentiometer. Features


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    MAX8729 MAX8729 CAPACITOR 10k 3KV transistor 2n7002 P05NZ-054 MAX8729EVKIT C0603C104K3RAC C0603C105K8RAC C1608X7R1E104K C3216X7R1E225K 1348-T006 PDF

    sis 962l

    Abstract: 301LV 93lc468 SIS 740 sc728 RT8110 sis962l CMI9739A lc949 CMI9739
    Text: 5 4 3 2 1 Power Now Clock Gen. PAGE 5 AMD Mobile Duron CPU RTC,VCC3,VCC5 PAGE 10 Sideband Bus SYSTEM POWER PAGE 22 PAGE 38 Thermal D D PAGE 2,3,4 Clock Buffer CHARGER &SELECTOR PAGE 11 PAGE 34 S2K Bus CRT North Bridge PAGE 15 BAT.LOW&OVER.T Memory Bus SiS 740


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    MAX1858 301LV MAX1711 ITE8705 ENE3886 LM393 1SS355 LM393 25C--> 55C--> sis 962l 93lc468 SIS 740 sc728 RT8110 sis962l CMI9739A lc949 CMI9739 PDF

    capacitor 27k 3kv

    Abstract: transistor T009 Diodes Inc. 2N7002 ceramic capacitor N3 3kv 27k 3kv CAPACITOR 10k 3KV GRM188R71H102K t009 C0603C105K8RAC MAX8751
    Text: 19-3932; Rev 0; 1/06 MAX8751 Evaluation Kit The MAX8751 evaluation kit EV kit is an assembled and tested PC board that demonstrates the MAX8751 low-cost multiple CCFL backlight controller. Lamp brightness is adjustable by an on-board potentiometer. Features


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    MAX8751 MAX8751 capacitor 27k 3kv transistor T009 Diodes Inc. 2N7002 ceramic capacitor N3 3kv 27k 3kv CAPACITOR 10k 3KV GRM188R71H102K t009 C0603C105K8RAC PDF

    NMOS-2

    Abstract: PWM techniques UDK325BJ106MM NMOS2 A915AY-2ROM design ideas CHEMICON LXHL-BW02 led driver buck off time FDG327N
    Text: DESIGN IDEAS L 3A Converter Drives LEDs with 500:1 Dimming by Jaino Parasseril Introduction DESIGN IDEAS 3A Converter Drives LEDs with 500:1 Dimming .37 Jaino Parasseril 40nVP–P Noise, 0.05µV/°C Drift, Chopped FET Amplifier .39


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    40nVP 100Hz 400mA/800mA, 25MHz 100Hz. 300mA LT3477 LMK316BJ335ML UDK325BJ106MM NMOS-2 PWM techniques UDK325BJ106MM NMOS2 A915AY-2ROM design ideas CHEMICON LXHL-BW02 led driver buck off time FDG327N PDF

    TPS54610

    Abstract: 2N7002 ZXM61N02F SLVA117
    Text: SLVA117 Dual Output Power Supply Sequencing for High Performance Processors By David Daniels, Tom Fowler Power Management Products Texas Instruments 12500 TI Boulevard MS8710 Dallas, Texas 75243 Abstract Dual voltage power supply architectures are becoming commonplace in high performance microprocessor


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    SLVA117 MS8710 TPS54610 2N7002 ZXM61N02F SLVA117 PDF