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    2SA1452 Search Results

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    2SA1452 Price and Stock

    Toshiba America Electronic Components 2SA1452-Y

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    Bristol Electronics 2SA1452-Y 230 3
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    Quest Components 2SA1452-Y 184
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    2SA1452 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1452 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1452 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1452 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1452 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1452 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1452 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1452 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1452 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1452 Toshiba TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) Scan PDF
    2SA1452A Toshiba Silicon PNP epitaxial type transistor for high speed, high current switching applications Scan PDF
    2SA1452A Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1452AO Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1452AY Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1452A-Y(F) Toshiba 2SA1452 - TRANS PNP 50V 12A 2-10R1A Original PDF
    2SA1452A-YF Toshiba 2SA1452A - Trans GP BJT PNP 80V 12A 3-Pin(3+Tab) TO-220NIS Original PDF
    2SA1452-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1452-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA1452 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1452A

    Abstract: 2SA1452A 2SC3710A
    Text: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


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    PDF 2SA1452A 2SC3710A 2-10R1A 20070701-JA A1452A 2SA1452A 2SC3710A

    c3710a

    Abstract: 2SC3710A C371 2SA1452A
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


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    PDF 2SC3710A 2SA1452A c3710a 2SC3710A C371 2SA1452A

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


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    PDF 2SC3710A 2SA1452A 2-10R1A

    A1452A

    Abstract: 2sa1452a A1452 2SC3710A
    Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)


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    PDF 2SA1452A 2SC3710A A1452A 2sa1452a A1452 2SC3710A

    2SA1452

    Abstract: 2SC3710
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS


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    PDF 2SA1452 2SC3710 2SA1452 2SC3710

    2SC371

    Abstract: high hfe transistor 2SA1452 2SC3710
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS


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    PDF 2SA1452 2SC3710 2SC371 high hfe transistor 2SA1452 2SC3710

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A


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    PDF 2SC3710A 2SA1452A 2-10R1A

    2SC371

    Abstract: 2SA1452 2SC3710
    Text: Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒Complement to type 2SA1452 ﹒Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage


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    PDF 2SC3710 O-220Fa 2SA1452 O-220Fa 2SC371 2SA1452 2SC3710

    2SA1452

    Abstract: 2SC3710 2SC371
    Text: JMnic Product Specification 2SA1452 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3710 APPLICATIONS ・High current switching applications PINNING


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    PDF 2SA1452 O-220Fa 2SC3710 2SA1452 2SC3710 2SC371

    A1452

    Abstract: A1452A 2SA1452A 2SC3710A A-1452
    Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)


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    PDF 2SA1452A 2SC3710A A1452 A1452A 2SA1452A 2SC3710A A-1452

    2SC3710

    Abstract: NPN 80V 3A 2SA1452
    Text: SavantIC Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1452 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications


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    PDF 2SC3710 O-220Fa 2SA1452 O-220Fa) VCCB30V 2SC3710 NPN 80V 3A 2SA1452

    2SA1452

    Abstract: 2sa145 2SC3710
    Text: SavantIC Semiconductor Product Specification 2SA1452 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SC3710 APPLICATIONS ·High current switching applications


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    PDF 2SA1452 O-220Fa 2SC3710 2SA1452 2sa145 2SC3710

    2SC3710

    Abstract: 2SC371 2SA1452 2SC371-0
    Text: Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1452 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications


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    PDF 2SC3710 O-220Fa 2SA1452 O-220Fa) VCC30V 2SC3710 2SC371 2SA1452 2SC371-0

    c3710a

    Abstract: 2SA1452A 2SC3710A
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A


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    PDF 2SC3710A 2SA1452A c3710a 2SA1452A 2SC3710A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0 / j s (Typ.)


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    PDF 2SA1452A 2SC3710A

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat ~°-4V(Max.) 0 3.2 ±0.2 (at Ic=6A) . High Speed Switching Time : tstg= l.Ous(Typ.) Zli . Complementary to 2SA1452


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    PDF 2SC3710 2SA1452 20/is

    2SA1452A

    Abstract: 2SC3710A
    Text: TOSHIBA 2SA1452A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1452A HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage r 2 '^ " 0 : VCE (sat)= - 0 .4 V (Max.) (at Iq = - 6 A )


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    PDF 2SA1452A 2SC3710A 2SA1452A 2SC3710A

    2sa1452

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • • • 2SA1452 Low Collector Saturation Voltage : v CE(sat)= —0.4V(Max.) (at Ic = -6A ) High Speed Switching Time : tgtg= 1.0,us (Typ.)


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    PDF 2SA1452 2SC3710. 2-10L1A 2sa1452

    2SA1452A

    Abstract: 2SC3710A
    Text: 2SC3710A TO SHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1452A


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    PDF 2SC3710A 2SA1452A 2SA1452A 2SC3710A

    2SA1452A

    Abstract: 2SC3710A
    Text: 2SA1452A TO SH IBA 2SA1452A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -y 5 < tY' o o 2.7±Q 2 of ml +1 in 1.1 1.1 0.75 ±0.15 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


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    PDF 2SA1452A 2SC3710A 2SA1452A 2SC3710A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1452 SILICON PNP EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: 0.3 MAX. 0 3 .2 ±0.2 . Low Collector Saturation Voltage : v CE sat =-0.4V(Max.) (at Ic=-6A) . High Speed Switching Time : tstg=1.0(is(Typ.)


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    PDF 2SA1452 2SC3710

    2SC3710A

    Abstract: 2SA1452A
    Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1452A


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    PDF 2SC3710A 2SA1452A 2SC3710A 2SA1452A

    2SA1452A

    Abstract: 2SC3710A s2555
    Text: 2SA1452A TO SH IBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage . , .x — n a \ t 10 ±0.3 t^ , — • vuiii (sat)- '“'•rrv v"iaA^ van •


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    PDF 2SA1452A 2SC3710A 2SA1452A 2SC3710A s2555

    IR-1U

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS Low Collector Saturation Voltage • V qe (sat)“ —0.4V (Max.) (at Ic = - 6A) High Speed Switching Time : tgtg^l.O^siTyp.)


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    PDF 2SA1452A 2SC3710A IR-1U