2SB1009
Abstract: 2SD1380
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1009 DESCRIPTION •High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage: V BR CEO= -32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1380
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2SB1009
2SD1380
2SB1009
2SD1380
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2SB1009
Abstract: 2SD1380
Text: JMnic Product Specification 2SB1009 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1380 APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SB1009
O-126
2SD1380
-20mA
-500mA
2SB1009
2SD1380
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2SD1380
Abstract: 2SB1009
Text: Inchange Semiconductor Product Specification 2SD1380 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB1009 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN
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2SD1380
O-126
2SB1009
2SD1380
2SB1009
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500ma 40v pnp
Abstract: 2SB1009 2SD1380
Text: Inchange Semiconductor Product Specification 2SB1009 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1380 APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter
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2SB1009
O-126
2SD1380
-20mA
-500mA
500ma 40v pnp
2SB1009
2SD1380
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2SD1380
Abstract: 2SB1009
Text: SavantIC Semiconductor Product Specification 2SD1380 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1009 ·Low collector saturation voltage · APPLICATIONS ·For low frequency power amplifier applications PINNING PIN
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2SD1380
O-126
2SB1009
2SD1380
2SB1009
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2SB1009
Abstract: 2SD1380
Text: SavantIC Semiconductor Product Specification 2SB1009 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1380 APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SB1009
O-126
2SD1380
-20mA
-500mA
2SB1009
2SD1380
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc4137
Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Text: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638
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7fi20W
O-126,
O-126FP
O-126
O-126FP
JO-126FP
2SB1007
2SB1309
2SB1009
2sc4137
TO126FP
2SB1423
2SB1311
2SD1379
2S02166
2SA1775
to-126fp
2SB1086A
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2SD1380
Abstract: TRANSISTOR BV 32
Text: Is 7 > V £ /Transistors 2SD1380 7 ; I/ 7° b - * Jg NPN y V □ > b 7 > V 7. $ X kf * * y 2SD 1380 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. • ^ J fir H ilH /D im e n s io n s Unit : mm 1) VcEO= 32V, lc= 2A, Pc= 10W<D?A mt-iT’T&Zc 2) 2SB10091 =l > -f'J ? A 3 0
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2SD1380
2SB10091
100MHz
2SD1380
TRANSISTOR BV 32
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2SB1009
Abstract: 2SD1380
Text: h ~7 "y v $ /Transistors 2 S B 1009 2SB1009 p n p v u□ > k ^>y ^ ffiJ g & :fc itififfl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor ie^ v ^ ^ • ^JF i\f> £ |21/D im e n s io n s U n it: mm • 1) V c e o = —32V , lcM ax.= — 2A,
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2SB1009
--32V,
--20V
2SB1009
2SD1380
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2sb1009
Abstract: No abstract text available
Text: 2SB1009 h 7 > y X i i /Transistors 2SB1009 y U - 1 > Epitaxial Planar PNP Silicon Transistor 1&Ji>Æ1l:fr*illïffl/L o w Freq. Power Amp. • £ 1 -Jfi\ti£[2l/D im ension s Unit : mm 1) V c e O = ~ 32V , I C M a x = - 2 A , PC M a x = 1 0 W l-J -Z & Z o
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2SB1009
11Em2
2SB1009
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Untitled
Abstract: No abstract text available
Text: ROHM CO L T D . 4 QE 7 fl2 flclt:lc] ODDSSlfl D h 7 > y ^ i ' / T ransistors • # \H ilS ]/D in ie n s io n s U n it: mm • « ft Pc 2SB1009 - T -Z 3 -I7 I £ 2 * V T ^7° U- ^ PNP y U □ > h 7 > V * £ i£ ® j& S ^ ii'f if f l/L o w Freq. Power Amp.
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2SB1009
--32V,
2SD1380.
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2Sa1775e
Abstract: 2sb1423 2SD1379 2SD1189F 2SC3271F 2SB1086A
Text: Tr Œ 1 ransistors • TO-126, TO-126FP Types Type F u n c tio n T O -1 2 6 F P T O -1 2 6 V cEo V *VcER lr (A ) Pc(W)(Tc = 25’ C) li (A ) T O -1 2 6 ht F T0-126FP V et (V ) Ic ( m A ) 2SB1007 2SB889F -8 0 -0 .7 — 10 5 82 - 390 -3 -1 0 0 2SB1009 2SB891F
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O-126,
O-126FP
2SB1007
2SB1009
2SB1065
2SB1086
2SB1086A
2SB1423
2SB1008
2SB1272
2Sa1775e
2SD1379
2SD1189F
2SC3271F
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Untitled
Abstract: No abstract text available
Text: 2SB1009 h ~7 > V X $ /T ra n s is to rs 2 S B 1 9 y i j 3 / h 7 > y ^ ^ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ^l-Jfi^jiB/Dim ensions Unit : mm • * 8 :6 1) V CEO= — 32V , Pc m ax = l C Max = - 2 A , 1 0W<7) j f l j g £ Y 7 T ‘ <fc 5 „
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2SB1009
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2sa970
Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Text: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925
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2SB675
2SB727
2SB1339
2SA1207
2SA970
2SA988
SA1127
2SA904A
2SA970
2SA1038
2SA564A
2SA906
2sa1015
2SA988
2SA1142
2sa949
2SA1038
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
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2SD947F
Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Text: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126
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O-126
O-126FP
SC-59)
O-126FP
O-126
T0-126FP
2SB1007
2SB889F
2SD947F
2SC4137
2sa1775 transistor
2SB1516
2SD1379
2SB1009
2SB1065
2SB1086
2SB1086A
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2SC2021LJNE)
2SB821
2SA937ALN
\2SC2021LN
2SB1276
2021M
2SA937AM
2SB737
2SD786
2SA1137
C2021M
B1568
mosfet ftr 03
2SC1B15
2SA1904
Mosfet FTR 03-E
2SC2021E
2SC1740 transistor
2SK2295
2S0240
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Untitled
Abstract: No abstract text available
Text: Regulator ICs Switching regulator for DC-DC converters BA9701/BA9701F The BA9701 and BA9701F are DC-DC converter switching regulators that use a pulse width modulation PWM sys tem. With an error amplifier, PWM comparator, and output driver, the ICs operate by receiving reference voltage and
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BA9701/BA9701F
BA9701
BA9701F
BA9700-series
BA9700-series
BA9700Aseries
BA9701)
BA9701
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2SD1383K
Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Text: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT
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2SD1376K
2SD1377K
2SD1378
2SD1379
2SD1380
2SD1381
2SD1382
2SD1383T0-3PB)
2SD1403
2-10L1A)
2SD1383K
2SD1402
2SD1407
2SD1416
2SD1390
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2SB1099
Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Text: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A
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2SA1706
2SB880
2SB676
2SB601
2SB950
2SB1341
2SB886
2SB673
2SB1108
2SB1343
2SB1099
2SB615
nec 2SB1099
B676
1086a
1091
2S8834
2sb536 TOSHIBA
2SB613
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2SB415
Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Text: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596
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2sb507
2sb596
2sa1069
2sb856
2sb1291
2sb508
2sb632
2SB415
sanyo 2sb509
NEC B 536
2sb631 hitachi
2SA1284
2sa966
2SB631
2SB557 TOSHIBA
2SA934
2SB661
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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Untitled
Abstract: No abstract text available
Text: Transistors C P T • T O - 1 2 6 • T O -1 2 6 F P CPT SC-59 is also available as automated, surface mounted type by adding F5 to the part number (see page 77). TO-126FP is a direct mounting type, allowing simple assembly without additional insulator.
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SC-59)
O-126FP
2SB1182
2SB1275
2SB1184
2SB1181
2SB1516
2SB1535
2SD1758
2SD1733
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