Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification 16.7±0.3 4.2±0.2 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO
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2SB1252
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1892
2SB1252
2SB1252
2SD1892
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2SB1252
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 2.7±0.2 Collector-base voltage (Emitter open)
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2002/95/EC)
2SB1252
SC-67
O-220F-A1
2SB1252
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 2.7±0.2 Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SB1252
SC-67
O-220F-A1
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PDF
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000
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2SB1252
2SD1892
SC-67
O-220F-A1
2SB1252
2SD1892
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2SB1252
Abstract: No abstract text available
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −120 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open) VEBO
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2SB1252
SC-67
O-220F-A1
2SB1252
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage
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2SD1892
2SB1252
2SB1252
2SD1892
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2SB1252
Abstract: 2SD1892 High frequency transistors
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –5 V
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2SB1252
2SD1892
2SB1252
2SD1892
High frequency transistors
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2SB1252
Abstract: 2SD1892 NPN POWER DARLINGTON TRANSISTORS
Text: SavantIC Semiconductor Product Specification 2SD1892 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB1252 APPLICATIONS ·Power amplification ·Optimum for 35W high-fidelity output
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2SD1892
O-220Fa
2SB1252
O-220Fa)
2SB1252
2SD1892
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1892
2SB1252
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000
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Original
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2SB1252
2SD1892
SC-67
O-220F
2SB1252
2SD1892
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PDF
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1892
2SB1252
2SB1252
2SD1892
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000
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OCR Scan
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2SD1895
2SB1252
i32flS2
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PDF
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DIL 1AM
Abstract: unl darlington 100X2 2SB1252 2SD1892
Text: Pow er Tnansistors 2SD1892 2S D 1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1252 Unit * mm 4.4max. 10.2max. 5.7max. • Features 2.9max.H • O ptim um fo r 3 5 W h i-fi o u tp u t
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OCR Scan
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2SD1892
2SB1252
10Vx02A
10VX10A
100X2Â
DIL 1AM
unl darlington
100X2
2SB1252
2SD1892
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type • Package Dimensions U n i t : mm Power Amplifier Complementary Pair with 2SD1872 ■Features 4 .4 m a x . 1 0 .2 m a x . 5 .7 m a x . 2 .9 m a x • O p tim u m fo r 35W hi-fi o u tp u t
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OCR Scan
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2SB1252
2SD1872
001b277
100x2m'
i32flS2
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PDF
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SD1892 2SD1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1252 U n it * mm 4.4m ax. 10.2m ax. • Features 5.7m ax. 2 .9 m a x > • Optimum for 35W hi-fi output • High DC c u rre n t gain
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OCR Scan
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2SD1892
2SB1252
2SDI892
32flS2
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PDF
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2SD1872
Abstract: darlington complementary 120v 2SB1252
Text: Power T ransistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD1872 • Features U n it : i 4.4 max. 10 .2 m ax. 5.7max. 2 .9 m a x . • O p tim u m fo r 35W hi-fi o u tp u t
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OCR Scan
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2SB1252
2SD1872
001b27Ã
2SD1872
darlington complementary 120v
2SB1252
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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2SB1547
Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Text: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020
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OCR Scan
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ZSB113Ã
2SB1223
2SB1024
2SA1718
2SB950
2SB1342
2SB1224
2SB1022
2SA1719
2SB1464
2SB1547
2SB1301
1409L
2SB1193
2SA1719
hitachi 2sb 1391
2SB1226
2SB1255
2SB1335
2SA1718
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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OCR Scan
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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2SB1232
Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004
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OCR Scan
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2SB1223
2SB1224
2SB1225
2SB1226
2SB1227
2SB1228
2SB1229
2SD1891
O-220Fa)
2SB1251
2SB1232
2SB1240
2SB1255
2SB1223
2SB1225
2SB1226
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2SD1915
Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Text: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915
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OCR Scan
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EPHTc-25
2SD1891
2SD1892
2SD1893
2SD1894
2SD1895
2SD1896
2SD1897
2SD1912
2SB1274
2SD1915
T0-220MF
2SD1899-Z
2SB1255
2SD1907
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