2SC3904
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3904 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 1.9±0.1 Collector current
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2002/95/EC)
2SC3904
2SC3904
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC3904 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 1.9±0.1 Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)
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2SC3904
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2SC3904
Abstract: transistor frequency 1.5GHz gain 20 dB
Text: Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● 0.65±0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and
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2SC3904
2SC3904
transistor frequency 1.5GHz gain 20 dB
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2SC3904
Abstract: No abstract text available
Text: Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● 0.65±0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and
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2SC3904
2SC3904
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2SC3904
Abstract: No abstract text available
Text: Transistors 2SC3904 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
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2SC3904
2SC3904
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC3904 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
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2SC3904
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9y marking
Abstract: 2SC3904 XN06543 XN6543
Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3904 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter
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XN06543
XN6543)
2SC3904
9y marking
2SC3904
XN06543
XN6543
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XP05543
Abstract: No abstract text available
Text: Composite Transistors XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1 6 2 5 3 4 0 to 0.1 2SC3904 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● High transition frequency fT.
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XP05543
2SC3904
XP05543
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type (0.425) 5 4 • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated) 1 0.2±0.1
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2002/95/EC)
XP06543
2SC3904
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2SC3904
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-noise amplification (2 GHz band) • Features ■ Package • Code Mini6-G3 • Pin Name
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2002/95/EC)
XN06543G
2SC3904
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN06543
XN6543)
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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2SC3904
Abstract: XN06543 XN6543
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05
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XN06543
XN6543)
2SC3904
XN06543
XN6543
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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XP6543
Abstract: 25CT5A 9y transistor
Text: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements
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XP6543
2SC3904
XP6543
25CT5A
9y transistor
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2Sc3909
Abstract: 2SA1516 2SC3910 2SC3899 2SC3900 2SC3901 2SC3902 2SC3904 2SC3905 2SC3906K
Text: - 17 8 - Ta=25<C 1*EP(àTc=25lC •ü -o T-L -a m u *UBU (V) 2SC3899 2SC3900 2SC3901 2SC3902 2SC3904 2SC3905 2SC3906K 2SC3907 2SC3909 2SC3910 2SC3912 2SC3913 2SC3914 2SC3915 2SC3916 2SC3917 2SC3918 2SC3919 2SC3920 2SC3921 2SC3922 2SC3923 2SC3925 2SC3927
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2SC3899
2SC3900
2SC3901
2SC3902
2SC3904
2SC3905
2SC3906K
A1531
2SC3929
150mV
2Sc3909
2SA1516
2SC3910
2SC3899
2SC3901
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2SC1571
Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Text: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft
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2SC44Q6
2SC4246
2SC4183
2SC4259
2SC4082
UN2217
DTC124GK
UN4217
DTC124GS
UN5531
2SC1571
2sc3828
4088B
2SC3904
4082 mitsubishi
2SC3609
2SC4082
2SC4161
K 4087
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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