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    2SC4539 Search Results

    2SC4539 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4539 Toshiba NPN Transistor Original PDF
    2SC4539 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4539 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4539 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4539 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4539 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC4539 Toshiba SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) TRANSISTOR Scan PDF

    2SC4539 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4539 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.)


    Original     		PDF 2SC4539 2SA1743

    Untitled

    Abstract: No abstract text available
    Text: 2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4539 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.)


    Original     		PDF 2SC4539 2SA1743

    2SA1743

    Abstract: 2SC4539 08TDC
    Text: 2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4539 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) · High speed switching time: tstg = 0.3 µs (typ.)


    Original     		PDF 2SC4539 2SA1743 2SA1743 2SC4539 08TDC

    2SA1743

    Abstract: 2SC4539
    Text: 2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4539 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.)


    Original     		PDF 2SC4539 2SA1743 2SA1743 2SC4539

    2SA1734

    Abstract: 2SC4539
    Text: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1734 2SC4539 2SA1734 2SC4539

    2SA1734

    Abstract: 2SC4539
    Text: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1734 2SC4539 2SA1734 2SC4539

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    2SA1734

    Abstract: 2SC4539
    Text: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) · High speed switching time: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1734 2SC4539 2SA1734 2SC4539

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SA1734

    Abstract: 2SC4539
    Text: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 s (typ.)


    Original     		PDF 2SA1734 2SC4539 2SA1734 2SC4539

    Untitled

    Abstract: No abstract text available
    Text: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1734 2SC4539 SC-62

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE P OWE R A M P L I F I E R 2SC4539 APPLICATIONS P O WE R S W I T C H I N G A P P L I C A T I O N S Low Saturation Voltage : V C E s a t = 0 .5 V ( M a x .) (Ic =700mA) High Speed Switching Time: t stg=0.3ns Small Flat Package


    OCR Scan     		PDF 2SC4539 700mA) 2SA1734 100mA 20/is

    4t marking

    Abstract: 2SA1734 2SC4539 marking TB
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)


    OCR Scan     		PDF 2SC4539 700mA) 2SA1734 40X50X0 250mm2 4t marking 2SA1734 2SC4539 marking TB

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)


    OCR Scan     		PDF 2SC4539 700mA) 2SA1734

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (IC = 700mA) High Speed Switching Time : tg tg = 0.3//S (Typ.)


    OCR Scan     		PDF 2SC4539 700mA) 2SA1734 40X50X0 250mm2X0

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    Untitled

    Abstract: No abstract text available
    Text: 2SA1734 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS mm m m u * wmr u Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS l.G M A X . 4 .6 M A X . 0M ±0.05 1.7 M A X . Low Saturation Voltage • • • • : V ç e ($at)~ — .5V (Max.)


    OCR Scan     		PDF 2SA1734 2SC4539 250mm

    2SC4515

    Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
    Text: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)


    OCR Scan     		PDF 2SC4515 2SC4516 2SC4519 2SC4520 2SC4521 2SC4522 2SC4523 2SC4524 2SC4547 SC-62 2SC4515 2SC4536 2SC4561 2SC4550 c455 2SC4519 2SC4520 2SC4521 2SC4523

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2sd2396

    Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650
    Text: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882


    OCR Scan     		PDF 2SD2333 2SD1884 2SD1878 2SD2252 2SD2251 2SD143Î 2SD1545 2SD1547 2SD1587 2sd2396 2SD2005 2SC4614 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    2SA1734

    Abstract: 2SC4539 A1734
    Text: 2SA1734 TOSHIBA 2 S A 1 734 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • Low Saturation Voltage • • • • High Speed Switching Time: ^ ^ = 0 .2 /^ (Typ.)


    OCR Scan     		PDF 2SA1734 2SC4539 2SA1734 A1734