Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment
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2SC5632G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment
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2002/95/EC)
2SC5632G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment
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2SC5632G
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2SC5632
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10
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2SC5632
2SC5632
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10
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2SC5632
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment
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2SC5632G
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2SC5632
Abstract: S-Mini3-G1
Text: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the
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2SC5632
2SC5632
S-Mini3-G1
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2SC5632
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05
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2SC5632
2SC5632
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2SC5632
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1
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2SC5632
2SC5632
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2SC5632
Abstract: No abstract text available
Text: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the
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2SC5632
2SC5632
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ed2002
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1
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2SC5632
ed2002
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment
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2002/95/EC)
2SC5632G
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2SC5632
Abstract: No abstract text available
Text: Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment
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2SC5632
2SC5632
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 2.1±0.1 0.2±0.1 2 di p
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Features Package High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic
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2SC5950G
2SA2122G
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2SC5950
Abstract: 2SC5950G 2SA2122G 2SC5632 2SA21
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic
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2SC5950G
2SA2122G
2SC5950
2SC5950G
2SA2122G
2SC5632
2SA21
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic
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2SA2122G
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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2SC5950
Abstract: 2SA2122G 2SC5632 2SC5950G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic
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2SC5950G
2SA2122G
2SC5950
2SA2122G
2SC5632
2SC5950G
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