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    2SC576 Search Results

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    2SC576 Price and Stock

    Rochester Electronics LLC 2SC5763M

    TRANS NPN 400V 7A TO-220AB
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    DigiKey 2SC5763M Bulk 452
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    onsemi 2SC5763M

    2SC5763 - Power Bipolar Transistor, 7A, 400V, NPN, TO-220AB, 3 Pin '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC5763M 3,603 1
    • 1 $0.6392
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    • 100 $0.6008
    • 1000 $0.5433
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    2SC576 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC576 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC576 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC576 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC576 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC576 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC576 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC5761 NEC Silicon Transistor Original PDF
    2SC5761 NEC NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOL Original PDF
    2SC5761FB NEC NPN SiGe RF Transistor for Low Noise High-gain Amplification Flat-lead 4-pin Thin-type Super Minimold (M04) Original PDF
    2SC5761FB-T2 NEC NPN SiGe RF Transistor for Low Noise High-gain Amplification Flat-lead 4-pin Thin-type Super Minimold (M04) Original PDF
    2SC5761-T2 NEC NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) Original PDF
    2SC5761-T2 NEC NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOL Original PDF
    2SC5763 Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Original PDF
    2SC5763M Sanyo Semiconductor Regulator, Switching Regulator Applications Original PDF
    2SC5763N Sanyo Semiconductor Regulator, Switching Regulator Applications Original PDF
    2SC5764 Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Original PDF
    2SC5764M Sanyo Semiconductor Regulator, Switching Regulator Applications Original PDF
    2SC5764N Sanyo Semiconductor Regulator, Switching Regulator Applications Original PDF
    2SC5765 Toshiba NPN Transistor Original PDF
    2SC5765 Toshiba Transistor Original PDF

    2SC576 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5765

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5765 2SC5765 PDF

    2SC5761

    Abstract: 2SC5761-T2 2FB200 transistor s2p MARKING T16
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		2SC5761 2SC5761-T2 PU10212EJ02V0DS 2SC5761 2SC5761-T2 2FB200 transistor s2p MARKING T16 PDF

    2sc5765

    Abstract: No abstract text available
    Text: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER


    Original     		2SC5765 O-92SP QW-R216-002 2sc5765 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5765 PDF

    transistor A1024

    Abstract: A1712 nec a1232
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		2SC5761 2SC5761-T2 transistor A1024 A1712 nec a1232 PDF

    2sc5766

    Abstract: transistors bipolar
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC5766 Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single


    Original     		2SC5766 2SC5766 16-Apr-09 transistors bipolar PDF

    2sC5765 transistor

    Abstract: 2SC5765
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5765 2sC5765 transistor 2SC5765 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH „ DESCRIPTION medium power amplifier applications strobo flash applications „ FEATURES * Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA)


    Original     		2SC5765 2SC5765L-T9S-K 2SC5765G-T9S-K O-92SP QW-R216-002 PDF

    2SC5765

    Abstract: No abstract text available
    Text: 2SC5765 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5765 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.27 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)


    Original     		2SC5765 2SC5765 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		2SC5761 2SC5761 2SC5761-T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN*0000 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Preliminary Features • • • • Package Dimensions High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process.


    Original     		2SC5764 2SC5764] PW300 cycle10% PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.27 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5765 PDF

    Transistor 2sc5763

    Abstract: 2SC5763 2sC5763 transistor ENN6989A TA-3501 IT03056 D0301 2SC576 IT03053
    Text: Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm


    Original     		ENN6989A 2SC5763 2010C 2SC5763] O-220 Transistor 2sc5763 2SC5763 2sC5763 transistor ENN6989A TA-3501 IT03056 D0301 2SC576 IT03053 PDF

    2SC5764

    Abstract: ta 3502
    Text: Ordering number : ENN6971A 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Features • • • • Package Dimensions High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process.


    Original     		ENN6971A 2SC5764 2SC5764] O-220ML 2SC5764 ta 3502 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER


    Original     		2SC5765 O-92SP QW-R216-002 PDF

    2SC5765

    Abstract: 2sC5765 transistor
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5765 2SC5765 2sC5765 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6989 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm


    Original     		ENN6989 2SC5763 2010C 2SC5763] PW300 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR M EDI U M POWER AM PLI FI ER ST ROBO FLASH ̈ DESCRI PT I ON medium power amplifier applications strobo flash applications ̈ FEAT U RES * Low Saturation Voltage: VCE sat = 0.27 V (max.),


    Original     		2SC5765 2SC5765L-T9S-K 2SC5765G-T9S-K O-92SP QW-R216-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PU10212EJ02V0DS 2SC5761 PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    ic 7848

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 60 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm


    Original     		NESG2030M04 OT-343 NESG2030M04 NE662M04 07e-12 05e-12 75e-9 25e-9 ic 7848 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm


    Original     		NESG2030M04 OT-343 NESG2030M04 PDF

    Untitled

    Abstract: No abstract text available
    Text: [ Ordering number: ENN6989 NPN Triple Diffused Planar Silicon Transistor 2SC5763 ISAßfO i Switching Regulator Applications Features Package Dimensions • High breakdown voltage. • High reliability. • High-speed switching. u n it : m m 201 OC ■ W ideASO .


    OCR Scan     		ENN6989 2SC5763 Ta-25Â PDF