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Panasonic Electronic Components 2SC5939G0L RF TRANS NPN 10V 0.05A SSSMINI3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC5939G0L	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.1263	Buy Now
Panasonic Electronic Components 2SC593900L RF TRANS NPN 10V 0.05A SSSMINI3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC593900L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SC593 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC593	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC593	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC593	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC593	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC593	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC593	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC593	Unknown	Vintage Transistor Datasheets	Scan	PDF
2SC593	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC593	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SC593	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC593	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC593	Unknown	Cross Reference Datasheet	Scan	PDF
2SC5930	Toshiba	Transistor Silicon NPN Triple Diffused Type (PCT Process)	Original	PDF
2SC5930(T2MITUM,FM	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 600V SC71	Original	PDF

2SC5930(TPF2,F,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 600V SC71	Original	PDF
2SC5931	Panasonic	Silicon NPN triple diffusion mesa type	Original	PDF
2SC5932	Sanyo Semiconductor	Horizontal Deflection Switching Transistors	Original	PDF
2SC5933	Sanyo Semiconductor	2SC5933	Original	PDF
2SC5933	Sanyo Semiconductor	Horizontal Deflection Switching Transistors	Original	PDF
2SC5934	Sanyo Semiconductor	Low-Saturation Voltage Transistors	Original	PDF

2SC593 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb	Original	2002/95/EC) 2SC5939G	PDF
C5931 Abstract: 2SC5931 C5931 Transistor Horizontal monitor EHT Text: Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm 23.4 (4.5) (2.0) (1.2) 26.5±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf < 200 ns • Wide safe operation area	Original	2SC5931 C5931 2SC5931 C5931 Transistor Horizontal monitor EHT	PDF
Untitled Abstract: No abstract text available Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)	Original	2SC5930	PDF
2-7D101A Abstract: 2SC5930 Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm High-speed switching: tf = 0.3 s (max) (IC = 0.3 A)	Original	2SC5930 2-7D101A 2SC5930	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SC5935	PDF
2SC5938A Abstract: RT3C99M Text: RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C99M is a composite transistor built with two 2.1 2SC5938A chips in SC-88 package. ① ⑥ 0.65 ② ⑤ 0.65 FEATURE ③ ④ Silicon NPN epitaxial type	Original	RT3C99M RT3C99M 2SC5938A SC-88 JEITASC-88	PDF
2SC5939 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02	Original	2002/95/EC) 2SC5939 2SC5939	PDF
2SC5935 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 Parameter Symbol	Original	2002/95/EC) 2SC5935 2SC5935	PDF
IC 74173 Abstract: 2SC5933 74171 Text: Ordering number : ENN7417 2SC5933 NPN Triple Diffused Planar Silicon Transistor 2SC5933 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).	Original	ENN7417 2SC5933 2048B 2SC5933] IC 74173 2SC5933 74171	PDF
2SC5935 Abstract: No abstract text available Text: Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open	Original	2SC5935 2SC5935	PDF
IC 74173 Abstract: 74171 N2503 2SC5933 N7417 Text: 注文コード No. N 7 4 1 7 2SC5933 No. N7417 N2503 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5933 特長超高精細度 CRT ディスプレイ水平偏向出力用・高速度である。・高耐圧である（VCBO=1600V）	Original	2SC5933 N7417 N2503 2048B IT03589 IT03590 IT03581 IT03591 IC 74173 74171 N2503 2SC5933 N7417	PDF
Untitled Abstract: No abstract text available Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)	Original	2SC5930	PDF
2SC5938 Abstract: RT3C55M Text: b RT3C55M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C55M is compound transistor built with two 2SC5938 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent.	Original	RT3C55M RT3C55M 2SC5938 SC-88 JEITASC-88	PDF
2SC5938 Abstract: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5938 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit: : mm ISAHAYA 2SC5938 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application	Original	2SC5938 2SC5938 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN	PDF

Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02	Original	2002/95/EC) 2SC5939	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SC5935	PDF
Untitled Abstract: No abstract text available Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)	Original	2SC5930 2-7D101A	PDF
2SC5934 Abstract: 2SA2117 Text: Ordering number : ENN7906 2SA2117 / 2SC5934 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • •	Original	ENN7906 2SA2117 2SC5934 2SA2117 2SC5934	PDF
IC 74164 Abstract: ic 74163 IC 74161 2SC5932 Text: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).	Original	ENN7416 2SC5932 2048B 2SC5932] IC 74164 ic 74163 IC 74161 2SC5932	PDF
2SC5939 Abstract: No abstract text available Text: Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 2 0.15 min. 1 0.23+0.05 –0.02 0.15 min. 5˚ 0.80±0.05 1.20±0.05 3 • High transition frequency fT	Original	2SC5939 2SC5939	PDF
2SA2117 Abstract: 2SC5934 Text: Ordering number : ENN7906 2SA2117 / 2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2	Original	ENN7906 2SA2117 2SC5934 2SC5934] 2SA2117 O-220ML 2SC5934	PDF
2SC5930 Abstract: 2-7D101A C5930 Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)	Original	2SC5930 2SC5930 2-7D101A C5930	PDF
ic 74163 Abstract: IC 74164 IC 74161 IC 7416 2SC5932 2SC593 Text: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).	Original	ENN7416 2SC5932 2048B 2SC5932] ic 74163 IC 74164 IC 74161 IC 7416 2SC5932 2SC593	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02	Original	2002/95/EC) 2SC5939	PDF

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Panasonic Electronic Components 2SC5939G0L

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2SC593 Datasheets (29)

2SC593 Datasheets Context Search

Untitled

C5931

Untitled

2-7D101A

Untitled

2SC5938A

2SC5939

2SC5935

IC 74173

2SC5935

IC 74173

Untitled

2SC5938

2SC5938

Untitled

Untitled

Untitled

2SC5934

IC 74164

2SC5939

2SA2117

2SC5930

ic 74163

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