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    2SC604 Price and Stock

    onsemi 2SC6043

    TRANS NPN 50V 2A 3MP
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    Rochester Electronics 2SC6043 5,552 1
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    Rochester Electronics LLC 2SC6043

    TRANS NPN 50V 2A 3MP
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    Rochester Electronics LLC 2SC6043-AE

    2SC6043 - 50 V, 2 A, LOW VCE NPN
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    onsemi 2SC6043-AE

    TRANS NPN 50V 2A TO92
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    Verical 2SC6043-AE 9,348 1,801
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    Rochester Electronics 2SC6043-AE 9,348 1
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    Rochester Electronics LLC 2SC6044-TD-E

    TRANSISTOR
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    2SC604 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC604 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC604 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC604 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC604 Unknown Cross Reference Datasheet Scan PDF
    2SC604 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC604 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC6040 Toshiba Transistor Silicon NPN Triple Diffused Type Original PDF
    2SC6040,T2Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 800V SC71 Original PDF
    2SC6040(TPF2,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 800V SC71 Original PDF
    2SC6041 Toshiba Horizontal - Deflection - Output Power Transistors Original PDF
    2SC6042 Toshiba Transistor Silicon NPN Triple Diffused Type Original PDF
    2SC6042,T2HOSH1Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 375V SC71 Original PDF
    2SC6042,T2WNLQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 375V SC71 Original PDF
    2SC6043 ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN BIPO 2A 50V MP Original PDF
    2SC6043 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Original PDF
    2SC6043-AE On Semiconductor 2SC6043 - NPN Bipolar Transistor for High-Current Switching Applications Original PDF
    2SC6043-AE ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN BIPO 2A 50V MP Original PDF
    2SC6044 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Original PDF
    2SC6045 Panasonic Silicon NPN epitaxial planar type For UHF band low noise amplifi cation Original PDF
    2SC6046 Isahaya Electronics 200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. Original PDF

    2SC604 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6044 Ordering number : ENN8251 2SC6044 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.


    Original     		2SC6044 ENN8251 PDF

    2sc6042 TOSHIBA

    Abstract: C6042 2SC6042 2-7D101A
    Text: 2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.2 s max (IC = 0.3A) • High breakdown voltage: VCES = 800 V, VCEO = 375 V


    Original     		2SC6042 2sc6042 TOSHIBA C6042 2SC6042 2-7D101A PDF

    8251

    Abstract: Applications of 8251 2SC6044
    Text: 2SC6044 Ordering number : ENN8251 2SC6044 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.


    Original     		2SC6044 ENN8251 8251 Applications of 8251 2SC6044 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6045G Silicon NPN epitaxial planar type For UHF band low noise amplification • Package  Low noise figure NF  High forward transfer gain |S21e|2  High transition frequency fT


    Original     		2002/95/EC) 2SC6045G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6045G Silicon NPN epitaxial planar type For UHF band low noise amplification • Package  Low noise figure NF  High forward transfer gain |S21e|2  High transition frequency fT


    Original     		2002/95/EC) 2SC6045G PDF

    C6042

    Abstract: 2SC6042 2-7D101A
    Text: 2SC6042 東芝トランジスタ シリコンNPN三重拡散形 2SC6042 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 • • 単位: mm スイッチング時間が速い。 : tf = 0.2 s 最大 (IC = 0.3 A)


    Original     		2SC6042 2-7D101A 20070701-JA C6042 2SC6042 2-7D101A PDF

    2-7D101A

    Abstract: 2SC6040
    Text: 2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.2 s max (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V


    Original     		2SC6040 2-7D101A 2SC6040 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6045G Silicon NPN epitaxial planar type For UHF band low noise amplification • Features  Package  Low noise figure NF  High forward transfer gain |S21e|2  High transition frequency fT


    Original     		2002/95/EC) 2SC6045G PDF

    2SC6040

    Abstract: 2-7D101A c6040
    Text: 2SC6040 東芝トランジスタ シリコンNPN三重拡散形 2SC6040 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ DC-DC コンバータ用 • • 単位: mm スイッチング時間が速い。 : tf = 0.2 s 最大 (IC = 0.3 A)


    Original     		2SC6040 2-7D101A 20070701-JA 2SC6040 2-7D101A c6040 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6045G Silicon NPN epitaxial planar type For UHF band low noise amplification • Package  Low noise figure NF  High forward transfer gain |S21e|2  High transition frequency fT


    Original     		2002/95/EC) 2SC6045G PDF

    2SC6043

    Abstract: No abstract text available
    Text: 2SC6043 Ordering number : ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.


    Original     		2SC6043 ENN8326 2SC6043 PDF

    2SC6045

    Abstract: ic shelf life
    Text: Transistors 2SC6045 Silicon NPN epitaxial planar type For UHF band low noise amplification Unit: mm • Features 0.33+0.05 –0.02  Low noise figure NF  High forward transfer gain |S21e|2  High transition frequency fT Collector-base voltage Emitter open


    Original     		2SC6045 2SC6045 ic shelf life PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8326A 2SC6043 Bipolar Transistor http://onsemi.com 50V, 2A, Low VCE sat NPN Single MP Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT process • High current capacitance


    Original     		EN8326A 2SC6043 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6043 Ordering number : ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.


    Original     		ENN8326 2SC6043 150ectric PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6041 TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type 2SC6041 Horizontal Deflection Output for HDTV, Digital TV, Projection TV. Unit: mm z High voltage : VCBO = 1700 V z Low saturation voltage : VCE sat = 1.5 V (max) : tf = 0.15 µs (typ.) z High speed


    Original     		2SC6041 2-16E3A PDF

    2SC6046

    Abstract: No abstract text available
    Text: 2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCE（sat）. Unit：mm 2.5 0.5 1.5 0.5 0.4 ① 0.95


    Original     		2SC6046 2SC6046 600mA 150mAIB PDF

    2SC6045

    Abstract: 2SC604
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6045 Silicon NPN epitaxial planar type For UHF band low noise amplification Unit: mm • Features 0.33+0.05 –0.02  Low noise figure NF  High forward transfer gain |S21e|2


    Original     		2002/95/EC) 2SC6045 2SC6045 2SC604 PDF

    2SC6041

    Abstract: c6041 2-16E3A
    Text: 2SC6041 TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type 2SC6041 Horizontal Deflection Output for HDTV, Digital TV, Projection TV. Unit: mm z High voltage : VCBO = 1700 V z Low saturation voltage : VCE sat = 1.5 V (max) : tf = 0.15 µs (typ.) z High speed


    Original     		2SC6041 2SC6041 c6041 2-16E3A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6043 Ordering number : ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.


    Original     		2SC6043 ENN8326 PDF

    C6042 transistor

    Abstract: C6042
    Text: 2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.2 µs max (IC = 0.3A) • High breakdown voltage: VCES = 800 V, VCEO = 375 V


    Original     		2SC6042 2-7D101A C6042 transistor C6042 PDF

    2SC6040

    Abstract: No abstract text available
    Text: 2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.2 µs max (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V


    Original     		2SC6040 2SC6040 PDF

    2SC6046

    Abstract: No abstract text available
    Text: 2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE Notice:This is not a final specification.Some parametric limits are subject to change. OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC6046 is a silicon NPN epitaxial type transistor


    Original     		2SC6046 2SC6046 600mA 150mAIB PDF

    2-7D101A

    Abstract: 2SC6040
    Text: 2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.2 µs max (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V


    Original     		2SC6040 2-7D101A 2SC6040 PDF

    c6042

    Abstract: C6042 transistor 2-7D101A 2SC6042 2sc6042 TOSHIBA
    Text: 2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.2 µs max (IC = 0.3A) • High breakdown voltage: VCES = 800 V, VCEO = 375 V


    Original     		2SC6042 c6042 C6042 transistor 2-7D101A 2SC6042 2sc6042 TOSHIBA PDF