2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1892
2SB1252
2SB1252
2SD1892
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000
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2SB1252
2SD1892
SC-67
O-220F-A1
2SB1252
2SD1892
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage
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2SD1892
2SB1252
2SB1252
2SD1892
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2SB1252
Abstract: 2SD1892 NPN POWER DARLINGTON TRANSISTORS
Text: SavantIC Semiconductor Product Specification 2SD1892 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB1252 APPLICATIONS ·Power amplification ·Optimum for 35W high-fidelity output
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2SD1892
O-220Fa
2SB1252
O-220Fa)
2SB1252
2SD1892
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1892
2SB1252
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000
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Original
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2SB1252
2SD1892
SC-67
O-220F
2SB1252
2SD1892
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PDF
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2SB1252
Abstract: 2SD1892
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1892
2SB1252
2SB1252
2SD1892
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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PDF
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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PDF
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LM1011N
Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
LM1011N
JRC386D
X0238CE
UA78GKC
M51725L
MJ13005
AN6677
HA11749
MN8303
sn76131n
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PDF
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jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
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PDF
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Original
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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PDF
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jrc386d
Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Text: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
LM3171
LM1011N
MJ13005
UA78GKC
upc1018c
x0137ce
PLL02A
MN8303
HA1457w
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PDF
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2SB1252
Abstract: 2SD1892 High frequency transistors
Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –5 V
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2SB1252
2SD1892
2SB1252
2SD1892
High frequency transistors
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DIL 1AM
Abstract: unl darlington 100X2 2SB1252 2SD1892
Text: Pow er Tnansistors 2SD1892 2S D 1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1252 Unit * mm 4.4max. 10.2max. 5.7max. • Features 2.9max.H • O ptim um fo r 3 5 W h i-fi o u tp u t
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OCR Scan
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2SD1892
2SB1252
10Vx02A
10VX10A
100X2Â
DIL 1AM
unl darlington
100X2
2SB1252
2SD1892
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PDF
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SD1892 2SD1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1252 U n it * mm 4.4m ax. 10.2m ax. • Features 5.7m ax. 2 .9 m a x > • Optimum for 35W hi-fi output • High DC c u rre n t gain
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OCR Scan
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2SD1892
2SB1252
2SDI892
32flS2
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PDF
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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OCR Scan
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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PDF
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2SB1232
Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004
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OCR Scan
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2SB1223
2SB1224
2SB1225
2SB1226
2SB1227
2SB1228
2SB1229
2SD1891
O-220Fa)
2SB1251
2SB1232
2SB1240
2SB1255
2SB1223
2SB1225
2SB1226
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PDF
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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OCR Scan
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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PDF
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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OCR Scan
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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PDF
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2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2254
2SB1493
2SD1485
2SB1531
2SD2328
2SA1185
2SD2052 equivalent
2SD1641
2SD1707
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PDF
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2SD2340 equivalent
Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2250
2SD1485
d2554
2SD2340
audio Darlington 200 W
2SD2052 equivalent
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PDF
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2SD1485
Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC3054
2SC4258
2SD1485
2SD2340 equivalent
audio Darlington 200 W
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PDF
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