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ROHM Semiconductor 2SD1963T100Q TRANS GP BJT NPN 20V 3A 4-PIN(3+
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1963T100Q	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ROHM Semiconductor 2SD1963T100R TRANS NPN 20V 3A MPT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1963T100R	Reel			1,000	1 - 10 - 100 - 1000 $0.29453 10000 $0.22268	Buy Now
Mouser Electronics	2SD1963T100R		969			1 $0.64 10 $0.56 100 $0.382 1000 $0.276 10000 $0.22	Buy Now
ROHM Semiconductor 2SD1963T100S TRANS NPN 20V 3A MPT3
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DigiKey	2SD1963T100S	Reel			1,000	1 - 10 - 100 - 1000 $0.26285 10000 $0.1974	Buy Now
Samtec Inc MTMM-102-02-S-D-196 CONN HEADER VERT 4POS 2MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTMM-102-02-S-D-196	Bulk			1	1 $1.05 10 $1.05 100 $1.05 1000 $1.05 10000 $1.05	Buy Now
Avnet Americas	MTMM-102-02-S-D-196	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	MTMM-102-02-S-D-196					1 $0.8 10 $0.8 100 $0.8 1000 $0.8 10000 $0.8	Get Quote
Master Electronics	MTMM-102-02-S-D-196					1 - 10 - 100 $0.573 1000 $0.489 10000 $0.464	Buy Now
Sager	MTMM-102-02-S-D-196				1	1 $0.89 10 $0.89 100 $0.65 1000 $0.5 10000 $0.44	Buy Now
Samtec Inc MTMM-107-02-S-D-196 VARIABLE POST HEIGHT HEADER STRI Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTMM-107-02-S-D-196	Bulk			1	1 $4.17 10 $4.17 100 $4.17 1000 $4.17 10000 $4.17	Buy Now
Avnet Americas	MTMM-107-02-S-D-196	Bulk			1	1 $2.71 10 $2.71 100 $2.17 1000 $1.76 10000 $1.76	Buy Now
Mouser Electronics	MTMM-107-02-S-D-196					1 $2.71 10 $2.71 100 $2.17 1000 $1.76 10000 $0.79	Get Quote
Powell Electronics	MTMM-107-02-S-D-196		393		1	1 $4.17 10 $4.17 100 $2.89 1000 $1.89 10000 $1.89	Buy Now
Master Electronics	MTMM-107-02-S-D-196					1 - 10 $3.67 100 $3.08 1000 $1.95 10000 $1.26	Buy Now

Sager	MTMM-107-02-S-D-196		595		1	1 $2.71 10 $2.71 100 $2.17 1000 $1.76 10000 $1.55	Buy Now

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2SD196 Datasheets (77)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD196	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD196	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD196	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD196	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD196	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD196	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD196	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD196	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD196	Unknown	Cross Reference Datasheet	Scan	PDF
2SD1960	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1960	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1960	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1960	ROHM	TO-92, SPT Transistors	Scan	PDF
2SD1961	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF

2SD1961	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1961	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1961	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1961	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Scan	PDF
2SD1961	ROHM	Epitaxial Planar NPN Silicon Transistors	Scan	PDF
2SD1961	ROHM	TO-92L, TO-92LS, MRT Transistors	Scan	PDF

2SD196 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB1308 Abstract: 2SD1963 T100 Text: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)	Original	PDF	2SB1308 2SD1963. 2SB1308 2SD1963 T100
2SD1964 Abstract: tf 130 Text: Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)	Original	PDF	2SD1964 SC-67 O-220F-A1 2SD1964 tf 130
2SD1964 Abstract: No abstract text available Text: Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage	Original	PDF	2SD1964 2SD1964
Untitled Abstract: No abstract text available Text: 2SD1961 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)	Original	PDF	2SD1961
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO	Original	PDF	2SD1963 -50mA, 100MHz
B204 Abstract: 2SB1308 2SD1963 rohm d204 D204 Text: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the	Original	PDF	2SB1308 2SD1963 94S-166-B204) 94S-342-D204) B204 2SB1308 2SD1963 rohm d204 D204
BF239 Abstract: 2SD1963 RC244 Text: SPICE PARAMETER 2SD1963 by ROHM TR Div. * 2SD1963 NPN BJT model * Date: 2006/11/14 .MODEL 2SD1963 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465	Original	PDF	2SD1963 Q2SD1963 00E-15 00E-12 000E-3 476E-3 22E-12 29E-12 BF239 2SD1963 RC244
2SD1963 Abstract: 2SB1308 T100 RS Marking Text: 2SD1963 Transistors Power transistor 50V, 3A 2SD1963 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm)	Original	PDF	2SD1963 2SB1308. 2SD1963 2SB1308 T100 RS Marking
2SD1964 Abstract: 2SD196 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)	Original	PDF	2002/95/EC) 2SD1964 SC-67 O-220F-A1 2SD1964 2SD196
2SD1963 Abstract: B204 2SB1308 94S-166-B204 D204 Text: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290	Original	PDF	2SB1308 2SD1963 94S-166-B204) 94S-342-D204) 2SD1963 B204 2SB1308 94S-166-B204 D204
transistor marking DG Abstract: 2SD1963 low power TRANSISTOR SMD Text: Transistors SMD Type Power Transistor 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage	Original	PDF	2SD1963 -50mA, 100MHz transistor marking DG 2SD1963 low power TRANSISTOR SMD
Untitled Abstract: No abstract text available Text: Power Transistors 2SD1964 2SD1964 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching U n it * mir • Features 4.4m ax. 10.2m ax. r 5.7m ax, • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e VcEtsao 2.9max.f • G o o d lin e a r ity o f D C c u r r e n t g a in ( h tt )	OCR Scan	PDF	2SD1964 2SD19Ã
c 5802 transistor Abstract: 2SD1961 TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097 Text: h ~7> V 7s $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961 /2SD1962M 2SD2097/2SD2098 NPN V U =l > h 7 > y X $ Epitaxial Planar NPN Silicon Transistor • rliÈ U /D im en sio n s Unit: mm 1) VcE(sat) VcE(sat)=1V (Max.) Ic / I b = 4 A / 0.1 A tlT ^ - S o	OCR Scan	PDF	2SD1961 /2SD1962M/2SD2097/2SD2098 /2SD1962M 2SD2097/2SD2098 O-92U 65-llt- c 5802 transistor TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097
2SD1959 Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947 Text: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983	OCR Scan	PDF	2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD19CE 2SD1964 O-126) 2SD1959 2SB1301 2SD1951 2sd1944 2SD1948 2SD1940 2SD1947

TRANSISTOR D401 Abstract: D401 -y 2SD1963 D4011 Text: h 7 > S' 7 $ /Transistors O “ C m Q A * • ^ w w 2SD1963 it f ^ ^ '> 7 ^ y u - ^ 0 N P N y ,; n > K 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor fé S â fc ï^ J iflte ffl/L o w Freq. Power Amp. 7 s h P ? K 7 7 7 V j- f f l/S t r o b o Flash. • 51-JB‘T a i a / Dimensions Unit : mm)	OCR Scan	PDF	2SD1963 SC-62 7fl26Tn G011115 TRANSISTOR D401 D401 -y 2SD1963 D4011
f 4558 Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425 Text: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459	OCR Scan	PDF	2SC3075 2SC3748 2SD1408 2SD1270 2SC4596 2SC3747 2SD1411 2SD1271 2SC3709 f 4558 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
1271A Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944 Text: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513	OCR Scan	PDF	2SD1243 2SD1243A 2SD1244 2SD1245 2SD1246 2SD1247 2SD1248 2SD1248K 2SD1251 2SD1252 1271A nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
2sd1960 Abstract: 2sd1960 transistor 2SD196 Text: 2SD1960 h 7 > V 7s £ /Transistors 2SD 1960 Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • « * /Dim ensions Unit : mm 1) V c e (sat) 2) • Features 1) Extremely Low collector saturation voltage (Vce (sat) 2) Compact but possible to drive large	OCR Scan	PDF	2SD1960 2SD1960 2sd1960 transistor 2SD196
2SD1961 Abstract: C45A Text: h 7 > y X $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 NPN '> • ;= ! > Epitaxial Planar NPN Silicon Transistor • W f2\ti±E 3/D im ensio ns Unit: mm M,a n » oc /mv> • • iffiftlilfcJElte/Absolute Maximum Ratings (Ta=25°C)	OCR Scan	PDF	2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 2SD1961 2SD1962M 2SD2097 2SD2098 /2SD1962M/2SD209 C45A
CP25A Abstract: 2SD1964 Text: P o w e r T ra n s is to rs 2SD1964 2S D 1964 Silicon N P N Epitaxial P lanar Type P a c k a g e D im e n s io n s P o w e r Sw itch in g • F e a tu re s • Low collector-em itter saturation voltage • Good linearity of DC c u rre n t gain htt • High It	OCR Scan	PDF	2SD1964 O-220 001b113 CP25A 2SD1964
2sd1960 transistor Abstract: 2sd1960 transistor 2SD1960 2SD 92 M transistor 2 SC 359 NPN TRANSISTOR 2sD1960 Text: 2SD1960 Transistor, NPN Features Dimensions Units : mm • available in TO-92 (SC-43) package • extremely low collector saturation voltage, typically VCE(8at) = 0.3 V at lc/lB = 4 A/0.1 A compact but possible to drive large current, typically l C ( m a x ) = 5 A	OCR Scan	PDF	2SD1960 SC-43) 2SD1960 2sd1960 transistor transistor 2SD1960 2SD 92 M transistor 2 SC 359 NPN TRANSISTOR 2sD1960
2SD1961 Abstract: transistor 2097 Text: 2SD1961 /2S D 1962M /2S D 2097 h z 7 > y X ^ r /"Transistors 2SD1961 /2SD1962M /2SD2097 Epitaxial Planar NPN Silicon Transistor • 1 W fé ^ Ü E I/ D im e n s io n s Unit: mm & & 1) V cE (sa t)tfr '> '° V c E (s a t)= 1 V (M ax.) (I c / I b = 4 A / 0 . 1 A )	OCR Scan	PDF	2SD1961 1962M /2SD1962M /2SD2097 /2SD1962M/2SD2097 transistor 2097
T272i Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098 Text: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ\|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm	OCR Scan	PDF	2SD1S81 2SD2C97/2SD2093 2SD1961 /2SD1962M/2SD2097/2SD2098 r-27-13 O-92L/ty/r-i-- T-27-13 O-92L T272i 2SC 5802 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
2SD1960 Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867 Text: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.	OCR Scan	PDF	2SB1580 2SB1316 2SB1567 2SB12B7 2SD2195 2SD1960 2SD1867 2SD2398 2SD1765 2sd1960 transistor 2SD1765 100V 2A MPT3 2SB1287

2SD196 Search Results

2SD196 Price and Stock

ROHM Semiconductor 2SD1963T100Q

ROHM Semiconductor 2SD1963T100R

ROHM Semiconductor 2SD1963T100S

Samtec Inc MTMM-102-02-S-D-196

Samtec Inc MTMM-107-02-S-D-196

2SD196 Datasheets (77)

2SD196 Datasheets Context Search

2SB1308

2SD1964

2SD1964

Untitled

Untitled

B204

BF239

2SD1963

2SD1964

2SD1963

transistor marking DG

Untitled

c 5802 transistor

2SD1959

TRANSISTOR D401

f 4558

1271A

2sd1960

2SD1961

CP25A

2sd1960 transistor

2SD1961

T272i

2SD1960