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    2SD231 Price and Stock

    ROHM Semiconductor 2SD2318TLV

    TRANS NPN 60V 3A CPT3
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    ROHM Semiconductor 2SD2318TLU

    TRANS NPN 60V 3A SOT-428
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    Avnet Asia 2SD2318TLU 24 Weeks 2,500
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    Samtec Inc TW-10-02-S-D-231-000-SM

    Conn Board Stacker HDR 20 POS 2mm Solder ST SMD - Bulk (Alt: TW-10-02-S-D-231-0)
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    Samtec Inc MTSW-110-22-S-D-231-RA

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    2SD231 Datasheets (71)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD231 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD231 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD231 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD231 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD231 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD231 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD231 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD231 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD231 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2310 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2310 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2311 Hitachi Semiconductor Silicon NPN Triple Diffused CTV Horizontal Deflection Output Original PDF
    2SD2311 Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SD2311 Hitachi Semiconductor Power Switching Transistors Scan PDF
    2SD2311 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SD2311 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2311 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2311 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2311 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2311 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SD231 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2318 TO-252 Features High DC current gain. +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SD2318 O-252 10MHz

    2SB1639

    Abstract: 2SD2318 SC633
    Text: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 0.9 5.1 6.5 2.3 0.65 1.5 0.5 0.8Min. C0.5 2.3 2.3 (3) (2) (1) 1.5 2.5 Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO


    Original     		PDF 2SD2318 2SB1639. SC-63 150ipment 2SB1639 2SD2318 SC633

    2SD2318

    Abstract: ic2 555
    Text: Transistors SMD Type High-current gain Power Transistor 2SD2318 TO-252 Features High DC current gain. +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1


    Original     		PDF 2SD2318 O-252 10MHz 2SD2318 ic2 555

    2SD2311

    Abstract: No abstract text available
    Text: 2SD2311 Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM • High breakdown voltage VCBO = 1500 V Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit ————————————————————– Collector to base voltage


    Original     		PDF 2SD2311 2SD2311

    2SD2318

    Abstract: transistor bf 44 3818 Spice VAF5
    Text: SPICE PARAMETER 2SD2318 by ROHM TR Div. * 2SD2318 NPN BJT model * Date: 2006/11/21 .MODEL 2SD2318 NPN + IS=5.0000E-12 + BF=706.52 + VAF=5 + IKF=2.3823 + ISE=5.0000E-12 + NE=1.6198 + BR=98.797 + VAR=100 + IKR=36.700E-3 + ISC=1.7366E-9 + NC=1.8494 + NK=.71386


    Original     		PDF 2SD2318 Q2SD2318 0000E-12 700E-3 7366E-9 000E-3 866E-3 45E-12 2SD2318 transistor bf 44 3818 Spice VAF5

    Untitled

    Abstract: No abstract text available
    Text: High-current gain Power Transistor 60V, 3A 2SD2318 Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC Collector power dissipation PC 3 A 4.5 A(Pulse) W W(TC=25°C) Tj 150 °C Tstg


    Original     		PDF 2SD2318 SC-63 R1010A

    2SD2318

    Abstract: No abstract text available
    Text: High-current gain Power Transistor 60V, 3A 2SD2318 Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC Collector power dissipation PC 3 A 4.5 A(Pulse) W W(TC=25°C) Tj 150 °C Tstg −55 to +150


    Original     		PDF 2SD2318 SC-63 R1010A 2SD2318

    2SB1639

    Abstract: 2sb163 2SD2318 ic 3 51 2A
    Text: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits Unit VCBO VCEO 80 60 6 3 4.5 V V V A A(Pulse) W VEBO Collector current IC Collector power dissipation


    Original     		PDF 2SD2318 100ms 10MHz SC-63 2SB1639. 2SB1639 2sb163 2SD2318 ic 3 51 2A

    Hitachi DSA001650

    Abstract: No abstract text available
    Text: 2SD2311 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SD2311 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SD2311 D-85622 Hitachi DSA001650

    Untitled

    Abstract: No abstract text available
    Text: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits Unit VCBO VCEO 80 60 6 3 4.5 V V V A A(Pulse) W VEBO Collector current IC Collector power dissipation


    Original     		PDF 2SD2318 2SB1639. SC-63 100ms

    2sd1944

    Abstract: data sheet 2sd1944 2SD2318
    Text: Transistors 2SD2318 / 2SD1944 96-244-D302 295


    Original     		PDF 2SD2318 2SD1944 96-244-D302) 2sd1944 data sheet 2sd1944

    2SD2318F5

    Abstract: No abstract text available
    Text: v7> £ /Transistors 2SD2318F5 E M 2 S D 2 3 1 8 • W F S r W & ifc y u - l - m N P N ' > V z i > Trjp|e Transistor Triple Diffused Planar NPN Silicon Transi; «HE/Low Freq. Power Amp. 1ftff^&ES/'Dim ensions U nit: mm h FE = 1000 (Typ.) 2) V c e (sat) VCE (sat)=0.5V(Typ.)


    OCR Scan     		PDF 2SD2318F5 Pw--100ms

    2SD2318F5

    Abstract: No abstract text available
    Text: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D 2 3 18 *Q , where ★ is hFE code and □ is lot number • high DC current amplification, typically hFE = 1000 • low collector saturation voltage,


    OCR Scan     		PDF 2SD2318F5 SC-63) 2SD2318F5

    Untitled

    Abstract: No abstract text available
    Text: 2SD2311 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0 = 1500 V Outline 1. B a s e 2. C o lle c to r 3. E m itte r 2SD2311 Absolute Maximum Ratings Ta = 25 °C Item Sym bol Rating


    OCR Scan     		PDF 2SD2311

    Untitled

    Abstract: No abstract text available
    Text: 2SD2311 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0= 1500 V Outline I 2. C o lle c to r 3. E m itte r 2SD2311 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit C o lle cto r to base vo lta g e


    OCR Scan     		PDF 2SD2311 D-85622

    2sd1944

    Abstract: 2SD2316 2SB1639 2SD2318
    Text: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =


    OCR Scan     		PDF 2SB1639 2SD2318 2SD1944 2SB1639 2SD1944. O-220FN Tc-25 2sd1944 2SD2316

    Untitled

    Abstract: No abstract text available
    Text: 2SD2311 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCBO- 1500 V Outline TO -3PFM 2SD2311 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O


    OCR Scan     		PDF 2SD2311

    D2318

    Abstract: No abstract text available
    Text: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,


    OCR Scan     		PDF 2SD2318F5 SC-63) D2318 2SD2318F5

    hFE-1000

    Abstract: 2SD2318F5 2SD231
    Text: h7 > 2 3 £ /Transistors D 2 3 1 8 F 2SD2318F5 5 Triple Diffused Planar NPN Silicon Transistor fäH j& H ^jiS tlß l/L o w Freq. Power Amp. * ^Ji?^tS0/Dim ensions Unit: mm 1) S 3 S S ' 3 i t l i ( g $ h F E * f '''o hFE=1000 (Typ.) 2) V ce (sat) «“'ffi'-'o


    OCR Scan     		PDF 2SD2318F5 2SD231 SC-63 hFE-1000 2SD2318F5

    2SD1944

    Abstract: No abstract text available
    Text: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3 A 2SB1639 •F e a tu re s 1 ) High DC current gain. (Typ.440 at Vce/lc*=—4V/—0.5A) 2 ) Low VcE(sai). (Typ,—0 ,2 V fit Ic/Ib =—2 /—0.05A) 3 ) Complements the 2SD1944.


    OCR Scan     		PDF 2SB1639 2SD2318 2SD1944 2SD1944. --60V, 2SB1639 2SB1Q39 -220FN 96-244-D302) 2SD1944

    2SD1944

    Abstract: 2SD2316 2SD231B 2SB1639 2SD2318
    Text: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =


    OCR Scan     		PDF 2SB1639 2SD2318 2SD1944 2SB1639 2SD1944. O-220FN Tc-25 50//A 2S0231B 2SD1944 2SD2316 2SD231B

    2SD2356

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors for TV and Monitor Display Package (No.) Applica­ tion VcBO ic tf max. (V) (A) 0“S) 5 0.3 10 0.3 0.3 1 10 0.5 1.5 0.8 2SD2310 1.5 1 2SD1734 2 1 2SD1575 2.5 0.8 3 0.8


    OCR Scan     		PDF 2SD2310 2SD1734 2SD1575 2SD1439 2SD1729 2SD1441 O-220F T0-220 2SC3737X- 2SC3738 2SD2356

    e50p

    Abstract: 2SB1639 2SD2318
    Text: High-current gain Power Transistor 60V, 3A 2SD2318 •Features 1) High DC current gain. 2) Low saturation voltage. •External dimensions (Units: mm) (Typ. VcE(sat) =0.5V at Ic / Ib=2A / 0.5A) 3) Complements the 2SB1639.


    OCR Scan     		PDF 2SD2318 2SB1639. SC-63 100ms e50p 2SB1639 2SD2318

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SD2311-Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM • H ig h breakdown voltage V C B O = 1500 V Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCB0 1500 V Collector to emitter voltage


    OCR Scan     		PDF 2SD2311--------------Silicon 2SD23U 25D231J