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    TE Connectivity ROX2SJ200K

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    2SJ200 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ200 Toshiba Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10) Original PDF
    2SJ200 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ200 Toshiba P-Channel MOSFET Original PDF
    2SJ200 Toshiba Original PDF
    2SJ200 Unknown FET Data Book Scan PDF
    2SJ200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200 Toshiba Field Effect Transistor Silicon P Channel MOS Type Scan PDF
    2SJ200 Toshiba Silicon P channel field effect transistor for high power amplifier applications Scan PDF
    2SJ200-O Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ200O Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200-Y Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ200Y Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200-Y(F) Toshiba 2SJ200 - MOSFET P-CH 180V 10A TO-3 Original PDF

    2SJ200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。


    Original     		PDF 2SJ200 2SK1529

    2SK1529

    Abstract: K1529 2SJ200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 K1529 2SJ200

    2SK1529

    Abstract: Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK1529 2SJ200 2-16C1B K1529

    2SK1529

    Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b

    K1529

    Abstract: 2SK1529 2SJ200 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ

    2SJ200

    Abstract: 2SK1529
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529

    K1529

    Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200

    2SJ200

    Abstract: 2SK1529 transistor application Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ

    K1529

    Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ

    2SJ200

    Abstract: 2SJ20
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ200

    toshiba j200

    Abstract: 2SJ200 2SK1529 SC-65
    Text: TOSHIBA 2SJ200 SILICON P CHANNEL MOS TYPE 2SJ200 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 1 5.9 M A X. 03.2 ±0.2 X / O — , I- |l| r Is 2.° * M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Drain-Souree Voltage vd ss Gate-Souree Voltage vg ss


    OCR Scan     		PDF 2SJ200 2SK1529 toshiba j200 2SJ200 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ200 T O S H IB A FIELD EFFECT TR A N S IS TO R SILIC O N P C H A N N E L M O S TYPE 2SJ200 Unit in mm H IG H P O W E R A M P L IF IE R A P P L IC A T IO N • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)


    OCR Scan     		PDF 2SJ200 2SK1529

    c 111 transistor

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200


    OCR Scan     		PDF 2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 -180V 2SK1529

    2SJ200

    Abstract: 6C1B
    Text: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) r . . Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 2SK1529 2SJ200 6C1B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.) Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 --180V 2SK1529

    toshiba j200

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : |Yfg| = 4.0S Typ. Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 toshiba j200

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 1 5.9 M A X. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4.0S Typ. • Complementary to 2SK 1529


    OCR Scan     		PDF 2SJ200 --180V SC-65 2-16C1B

    k1529

    Abstract: 2SJ200 2SK1529 SC-65
    Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in mm : V j g g = 180V • H igh Forw ard Transfer Adm ittance : |Yfs|= 4.0S Typ.) • Com plem entary to 2SJ200


    OCR Scan     		PDF 2SK1529 2SJ200 k1529 2SJ200 2SK1529 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK1529 2SJ200