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    2SK1158 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    2SK1158-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 7A 900Mohm To-220Ab Visit Renesas Electronics Corporation

    2SK1158 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1158 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1158 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1158 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1158 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1158 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1158 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1158 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1158 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1158 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1158 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1158 Unknown FET Data Book Scan PDF
    2SK1158-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK1158 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original
    PDF 2SK1157, 2SK1158 O-220AB 2SK1157 2SK1158 D-85622 Hitachi DSA002780

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original
    PDF 2SK1157, 2SK1158 2SK1157 2SK1158 Hitachi DSA00279

    2SK1157

    Abstract: 2SK1157-E 2SK1158 2SK1158-E PRSS0004AC-A
    Text: 2SK1157, 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 Previous: ADE-208-1248 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


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    PDF 2SK1157, 2SK1158 REJ03G0910-0200 ADE-208-1248) PRSS0004AC-A O-220AB) 2SK1157 2SK1157-E 2SK1158 2SK1158-E PRSS0004AC-A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    2SK1157

    Abstract: 2SK1158
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


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    PDF 2SK1157, 2SK1158 220AB 2SK1157 2SK1157 2SK1158

    2SK1157

    Abstract: 2SK1158 Hitachi DSA00398
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original
    PDF 2SK1157, 2SK1158 O-220AB 2SK1157 2SK1157 2SK1158 Hitachi DSA00398

    2SK1157

    Abstract: 2SK1158 DSA003638
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET ADE-208-1248 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


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    PDF 2SK1157, 2SK1158 ADE-208-1248 O-220AB 2SK1157 2SK1157 2SK1158 DSA003638

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    Hitachi DSA002712

    Abstract: No abstract text available
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original
    PDF 2SK1157, 2SK1158 O-220AB 2SK1157 2SK1158 Hitachi DSA002712

    k1832

    Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
    Text: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2


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    PDF 2SK1831, 2SK1832 2SK1831 sou150 k1832 K1831 2SK1157 2SK1158 2SK1831 2SK1832

    2SK1161

    Abstract: 2SK1162 2SK1157 2SK1158 DSA003769
    Text: 2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P


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    PDF 2SK1161, 2SK1162 2SK1161 2SK1161 2SK1162 2SK1157 2SK1158 DSA003769

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1831, 2SK1832 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline


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    PDF 2SK1831, 2SK1832 2SK1831 2SK1832 K1831 K1832 D-85622 Hitachi DSA002748

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK2116, 2SK2117 Absolute Maximum Ratings Ta = 25°C


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    PDF 2SK2116, 2SK2117 2SK2116 2SK2117 Hitachi DSA00279

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


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    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    2SK1157

    Abstract: 2SK1157-E 2SK1158 2SK1158-E PRSS0004AC-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM


    Original
    PDF 2SK2116, 2SK2117 O-220CFM 2SK2116 2SK2117 D-85622 Hitachi DSA002749

    Untitled

    Abstract: No abstract text available
    Text: 2SK1161, 2SK1162 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1


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    PDF 2SK1161, 2SK1162 2SK1161 2SK1162 2SK1161

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1540 L (S), 2SK1541(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original
    PDF 2SK1540 2SK1541 50ica, D-85622 Hitachi DSA002779

    Untitled

    Abstract: No abstract text available
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver


    OCR Scan
    PDF 2SK1157, 2SK1158

    2sk1197

    Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
    Text: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)


    OCR Scan
    PDF 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1172 2SK1173 50nstyp 2SK1194 2SK1195 2sk1197 2501L NEC 2501L 2SK1158 2SK1159

    Untitled

    Abstract: No abstract text available
    Text: 2SK1540 L (S), 2SK1541(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan
    PDF 2SK1540 2SK1541 2SK1540 2SK1541

    Untitled

    Abstract: No abstract text available
    Text: 2SK1157,2SK1158 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistarice High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    OCR Scan
    PDF 2SK1157 2SK1158 2SK1157, 2SK1158

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan
    PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212