2SK1159
Abstract: 2SK1160
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
220AB
2SK1159
2SK1159
2SK1160
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std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2SK1119
2SK1120
2SK1151
2SK1152
2SK1153
2SK1154
2SK1155
2SK1156
2SK1157
2SK1158
std2n52
stp2na60
buz102 equivalent
SSH6N80
rfp60n06
replacement for IRL2203N
BUZ91 equivalent
RFP60N06LE
IRFP460 cross reference
buz91a equivalent
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2SK1159
Abstract: 2SK1160 DSA003638
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
ADE-208-1249
O-220AB
2SK1159
2SK1159
2SK1160
DSA003638
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2SK1159
Abstract: 2SK1160 PRSS0004AC-A
Text: 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 Previous: ADE-208-1249 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
REJ03G0911-0200
ADE-208-1249)
PRSS0004AC-A
O-220AB)
2SK1159
2SK1160
PRSS0004AC-A
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2SK1159
Abstract: 2SK1160 Hitachi DSA00337
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
O-220AB
2SK1159
2SK1159
2SK1160
Hitachi DSA00337
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2SK1159
Abstract: 2SK1160 PRSS0004AC-A 2SK1160-E
Text: 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 Previous: ADE-208-1249 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
REJ03G0911-0200
ADE-208-1249)
PRSS0004AC-A
O-220AB)
2SK1159
2SK1160
PRSS0004AC-A
2SK1160-E
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Hitachi DSA002712
Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
O-220AB
2SK1159
2SK1160
Hitachi DSA002712
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
O-220AB
2SK1159
2SK1160
D-85622
Hitachi DSA002780
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SSH6N80
Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205
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2SK1119
2SK1120
2SK1151
2SK1152
2SK1153
2SK1154
2SK1155
2SK1156
2SK1157
2SK1158
SSH6N80
IRF640 equivalent
buz100 equivalent
ste38NA50
irf540 equivalent
stp2na60
buz10 equivalent
BUK444 equivalent
2SK2700 equivalent
BUZ71 equivalent
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
2SK1159
2SK1160
Hitachi DSA00279
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Untitled
Abstract: No abstract text available
Text: 2SK1159 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)
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2SK1159
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2SK1159
Abstract: 2SK1160
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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2SK2423
O-220CFM
D-85622
Hitachi DSA001651
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Untitled
Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
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2SK1159,
2SK1160
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Untitled
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline
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2SK2423
2SK1159.
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Untitled
Abstract: No abstract text available
Text: 2SK1163, 2SK1164 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
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2SK1163,
2SK1164
2SK1159,
2SK1160.
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Untitled
Abstract: No abstract text available
Text: 2SK1315 L (S), 2SK1316(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
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2SK1315
2SK1316
2SK1315
2SK1316
2SK1159,
2SK1160.
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2SJ235
Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SJ235
2sk1299
2SK1878
2SJ299
2sj2 high voltage p channel mosfet
2SJ214
2sk mosfet
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2sk1299
Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2sk1299
2SK513
2SK1202
2SK1231
2SK1665
2SK684
2SK740
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ac Inverter schematics 10 kw
Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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GN4530C
GN6010A
GN6015A
GN6020C
GN6030C
GN6050E
GN6075E
GN9060E
GN12015C
GN12030E
ac Inverter schematics 10 kw
200v dc motor igbt
MBN300A6
UPS schematics
inverter circuit schematics
2SJ279
2SK1762
ac Inverter 10 kw
GN12015C
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SK109
2SJ236
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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2SK44
Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SK44
2SJ182
2SJ214
2SK513
2SJ235
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2sk1197
Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
Text: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)
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2SK1153
2SK1154
2SK1155
2SK1156
2SK1157
2SK1172
2SK1173
50nstyp
2SK1194
2SK1195
2sk1197
2501L
NEC 2501L
2SK1158
2SK1159
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