2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
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Original
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2SK1358
O-247
2SK1359
2SK1362
2SK2563
2SK2568
2SK1411
2SK1535
2SK1410
2SK1538
2SK1358 datasheet
2sk2082
2SK2397-01MR
2SK2475
2SK2370
2sk2225
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PDF
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a2393
Abstract: 2SK2080-01R
Text: 2SK2080-01R FU JI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Features Outline Drawings • Hi| h speed switching • Lo n on-resistance • Nc secondary breakdown • Lo w driving power • Hit|h voltage • V G,= ± 30 V Guarantee • Avalanche-proof
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OCR Scan
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2SK2080-01R
20Ki2)
a2393
2SK2080-01R
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PDF
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a2393
Abstract: No abstract text available
Text: 2SK2080-01R F U JI PO W ER M O S-FET N-CI-IAIMNEL SILICON POWER MOS-FET F A P -II S E R IE S • Features Outline Drawings • Hiijh speed switching • Lo n on-resistance • Nc secondary breakdown • Lo w driving power • Hiijh voltage • V G ,= ± 3 0 V Guarantee
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OCR Scan
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2SK2080-01R
20Kii)
a2393
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PDF
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2SK2080-01
Abstract: N channel Mosfet 15A 500V A2-296 2SK2080
Text: 2SK2080-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES Outline Drawings I Features • High speed sw itching • Low o n-resistance »No secondary b reakd ow n »Low driving p o w er »High voltage • V GS= ± 3 0 V G uarantee
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OCR Scan
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2SK2080-01
D0G31SM
A2-298
2SK2080-01
N channel Mosfet 15A 500V
A2-296
2SK2080
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PDF
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A2296
Abstract: 2SK2080-01 A2-296 CW20S
Text: 2SK2080-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P -II S E R IE S Outline Drawings I Features • High speed switching • Low on-resistance »No secondary breakdown »Low driving power »High voltage •V GS= ± 3 0 V Guarantee
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OCR Scan
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2SK2080-01
80/JS
D0G31SM
A2-298
A2296
A2-296
CW20S
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2080-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Outline Drawings I Features ►H ig h s p ee d s w itc h in g ►L o w o n -re s is ta n c e ►N o s e c o n d a ry b re a k d o w n ►L o w d riv in g p o w e r ►H ig h v o lta g e
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OCR Scan
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2SK2080-01
GDG31SM
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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OCR Scan
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2SK2519-01
2SK2520-01
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK1007-01
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PDF
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01
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OCR Scan
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2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01
2SK1007-01
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PDF
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Untitled
Abstract: No abstract text available
Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01
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OCR Scan
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2SK1006-01M
2SK1007-01
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
2SK1916-01
2SK1017-01
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PDF
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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OCR Scan
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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PDF
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2SK1101-01M
Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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OCR Scan
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2SK1006-01M
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
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PDF
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TO-3P Jedec package outline
Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof
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OCR Scan
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2SK1507-01
SC-67
O-220F15
2SK1081-01
2SK956-01
2SK1385-01R
2SK1548-01
2SK1024-01
O-220
TO-3P Jedec package outline
2sk1507
TO-220F15
K1015
TO220F15
2SK1016
2SK1015-01
2SK1916
high voltage mosfet, to-220 case
2SK956-01 equivalent
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PDF
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2SK1014-01
Abstract: 2SK151
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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OCR Scan
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2SK1006-01M
2SK1007-01
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
2SK1916-01
2SK1017-01
2SK1014-01
2SK151
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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PDF
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2sk1507
Abstract: 2SK956 2SK1011 2SK1011-01 2SK1012 2SK1016 2SK1082 2SK1217 2SK1916 2SK962
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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OCR Scan
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2SK1006-01M
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2sk1507
2SK956
2SK1011
2SK1012
2SK1016
2SK1082
2SK1217
2SK1916
2SK962
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PDF
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