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    2SK2651 Search Results

    2SK2651 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2651 Fuji Electric N-channel MOS-FET Original PDF
    2SK2651-01MR Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK2651-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2651-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2651-01MR Fuji Electric N-channel MOS-FET Scan PDF

    2SK2651 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    2SK2651-01MR PDF

    2SK2651-01MR

    Abstract: No abstract text available
    Text: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    2SK2651-01MR 2SK2651-01MR PDF

    2SK2651-01MR

    Abstract: MOSFET 900V 3A 2sk2651
    Text: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    2SK2651-01MR 2SK2651-01MR MOSFET 900V 3A 2sk2651 PDF

    2SK2651

    Abstract: 2SK2651-01MR MOSFET 719
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2651-01MR O-220F 2SK2651 2SK2651-01MR MOSFET 719 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2651-01MR O-220F15 SC-67 PDF

    2SK2651

    Abstract: 2SK2651-01MR 2SK26
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2651-01MR O-220F 2SK2651 2SK2651-01MR 2SK26 PDF

    2SK2651

    Abstract: Vcc-90
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2651-01MR O-220F 2SK2651 Vcc-90 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2SK2696

    Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
    Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack


    Original
    O-220AB O-220F15 Feb-00 2SK2696 2SK951 2SK2397 2SK2527 2SK2528 2SK2100 2SK2696 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    2sk3337

    Abstract: 2SK2655-01R
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated(Continued) 形 式 Device type 2SK2767-01 2SK2768-01L, S 2SK2769-01MR


    Original
    2SK2767-01 2SK2768-01L, 2SK2769-01MR 2SK2770-01 2SK2651-01MR 2SK2652-01 2SK2850-01 2SK2653-01R 2SK2654-01 2SK2655-01R 2sk3337 PDF

    2SK3102-01R

    Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01


    Original
    2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original
    RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original
    2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018 PDF

    2SK2651-01MR

    Abstract: No abstract text available
    Text: F U JI 2SK2651-01MR SUJM FAP-IIS Series s l TL^U G N-channel MOS-FET 900V 2,5 0 . 6A 50W Min. Typ. Max. Unit V V PA mA > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V G uarantee Repetitive A valanche Rated


    OCR Scan
    2SK2651-01MR 0004b77 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2651-01MR F U JI N-channel MOS-FET FAP-IIS Series > Features - 6A 50 W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated TO -220F15 4i 10 03.2


    OCR Scan
    2SK2651-01MR -220F15 i00//s 0G04b77 PDF

    Untitled

    Abstract: No abstract text available
    Text: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.


    OCR Scan
    2SK2646-01 2SK2647-01MR 2SK2762-01L, 2SK2763-01 2SK2764-01R 2SK2765-01 2SK2766-01R 2SK2648-01 2SK2649-01R 2SK2767-01 PDF

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan
    1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 PDF

    2SK2645-01MR

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type MaximumRaBn V d ss 450 450 450 450 450 2SK2538-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M R 500 500 500 iskifst-W


    OCR Scan
    2SK2538-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M 2SK264M FAP456 2SK2759-01R 2SK2643-01 2SK2645-01MR PDF

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan
    F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R PDF

    2sk2645

    Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
    Text: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan
    2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 O-220 2SK27S8-01L 2SK2641-01 2sk2645 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan
    2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R PDF

    Untitled

    Abstract: No abstract text available
    Text: S P E C I F I C A T I O N DEVI Œ NAME : P o w e r TYPE NAME : 2 S K M O S F E T 2 6 5 I- Q 1 M R SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DA TE NAME APPROVED Fuji Electric C o J i c L DRAWN CHECKED


    OCR Scan
    2SK2651-01MR 0257-R-004a 2SK2651-01MR O--220F PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 •900 Volts Device Type 2SK2638-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan
    2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L 2SK2641-01 FAP450 PDF