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Renesas Electronics Corporation 2SK3390IX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK3390IX		5,681			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SK3390IXTB-E
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Bristol Electronics	2SK3390IXTB-E		927			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SK3390IX03UB
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Quest Components	2SK3390IX03UB		1,920			1 $7.194 10 $7.194 100 $7.194 1000 $3.597 10000 $3.597	Buy Now

2SK3390IX Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting	Original	PDF	2SK3390 REJ03G0208-0400 PLSS0003ZA-A
2SK3390IXTB-E Abstract: No abstract text available Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting	Original	PDF	2SK3390 REJ03G0208-0400 PLSS0003ZA-A 2SK3390IXTB-E
2SK3390IX Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2SK3390IX Abstract: No abstract text available Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0200Z Previous ADE-208-846 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. (f = 836 MHz) • Compact package capable of surface mounting	Original	PDF	2SK3390 REJ03G0208-0200Z ADE-208-846 2SK3390IX
2SK3390 Abstract: 2SK3390IX Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Untitled Abstract: No abstract text available Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0300 Rev.3.00 Aug.05.2004 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting	Original	PDF	2SK3390 REJ03G0208-0300
2SK3390IX Abstract: 2SK3390 Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0301 Rev.3.01 Apr.22,2005 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting	Original	PDF	2SK3390 REJ03G0208-0301 PLSS0003ZA-A Unit2607 2SK3390IX 2SK3390