125MH
Abstract: No abstract text available
Text: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3685-01
125MH
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A3020v
Abstract: mosfet 600V 50A
Text: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3688-01L
A3020v
mosfet 600V 50A
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2SK3686-01
Abstract: 2SK3686 diode 60V 8A mosfet 600V 7A N-CHANNEL TO
Text: 2SK3686-01 FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3686-01
O-220AB
2SK3686-01
2SK3686
diode 60V 8A
mosfet 600V 7A N-CHANNEL TO
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2SK3682-01
Abstract: No abstract text available
Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3682-01 500V/0.38Ω/19A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Symbols Ratings Units V DS 500 V Continuous Drain Current ID ±19 A
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2SK3682-01
00V/0
38/19A)
O-220
MT5F12580
2SK3682-01
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2SK368
Abstract: 2SK3683
Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)
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2SK368
2SK368
2SK3683
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FUJI ELECTRIC
Abstract: 2SK3684-01L
Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3684-01L,S,SJ 500V/0.38Ω/19A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)
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2SK3684-01L
00V/0
38/19A)
MT5F12583
FUJI ELECTRIC
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2SK3682-01
Abstract: Vds500V
Text: 2SK3682-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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Original
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2SK3682-01
O-220AB
2SK3682-01
Vds500V
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Untitled
Abstract: No abstract text available
Text: 2SK3682-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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Original
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PDF
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2SK3682-01
O-220AB
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Untitled
Abstract: No abstract text available
Text: 2SK3686-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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Original
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2SK3686-01
O-220AB
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2SK3681-01
Abstract: 2SK3681-01 equivalent
Text: 2SK3681-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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Original
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2SK3681-01
2SK3681-01
2SK3681-01 equivalent
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Untitled
Abstract: No abstract text available
Text: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3688-01L
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mosfet 300V 10A
Abstract: No abstract text available
Text: 2SK3689-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3689-01
mosfet 300V 10A
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diode 60V 8A
Abstract: diode sj mosfet 10a 600v Transistor SJ 2SK3688-01L
Text: 2SK3688-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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Original
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2SK3688-01L
diode 60V 8A
diode sj
mosfet 10a 600v
Transistor SJ
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Untitled
Abstract: No abstract text available
Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)
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2SK368
O-236MOD
SC-59
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2SK3680-01
Abstract: n-channel 250V power mosfet VDS50
Text: 2SK3680-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators
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2SK3680-01
2SK3680-01
n-channel 250V power mosfet
VDS50
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2SK3685-01
Abstract: MJ205
Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3685-01 500V/0.38Ω/19A 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current
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2SK3685-01
00V/0
38/19A)
O-247
MT5F12584
2SK3685-01
MJ205
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2SK3688-01L
Abstract: FUJI MOSFET
Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3688-01L,S,SJ 600V/0.54Ω/16A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)
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2SK3688-01L
00V/0
54/16A)
MT5F12587
FUJI MOSFET
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2SK3683
Abstract: 2SK3683-01MR
Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR 500V/0.38Ω/19A 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current
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2SK3683-01MR
00V/0
38/19A)
O-220F15R
MT5F12582
2SK3683
2SK3683-01MR
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2sk3687-01mr
Abstract: No abstract text available
Text: 2SK3687-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
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2SK3687-01MR
O-220F
2sk3687-01mr
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A3020v
Abstract: 2SK3687-01MR equivalent 2SK3687-01MR 2sk3687
Text: 2SK3687-01MR FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3687-01MR
O-220F
2SK3687-01MR
A3020v
2SK3687-01MR equivalent
2sk3687
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Untitled
Abstract: No abstract text available
Text: 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications P4 Switching regulators DC-DC converters
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Original
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PDF
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2SK3684-01L
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2SK368
Abstract: No abstract text available
Text: T O S H IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS Unit in mm CONSTANT CURRENT APPLICATIONS + 0.5 2.5 - 0.3 • • High Breakdown Voltage : VQ Dg= —100V Min.
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OCR Scan
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PDF
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2SK368
-100V
to-236mod
SC-59
2SK368
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U8 marking
Abstract: No abstract text available
Text: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR i < ; SILICON N CHANNEL JUNCTION TYPE \c 3 f i f t Unit in mm AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS + 0.5 2.5 - 0.3 • • • High Breakdown Voltage : V q d S “ —100V Min.
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OCR Scan
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PDF
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2SK368
--100V
--80V)
U8 marking
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • High Breakdown Voltage : VGDg = —100V Min. •
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PDF
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2SK368
O-236MOD
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