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    2SK37 Search Results

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    2SK37 Price and Stock

    onsemi 2SK3708

    MOSFET N-CH 100V 30A TO220ML
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    onsemi 2SK3746

    MOSFET N-CH 1500V 2A TO3PB
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    DigiKey 2SK3746 Tray 200
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    Rochester Electronics 2SK3746 2,609 1
    • 1 $3.9
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    Sanken Electric Co Ltd 2SK3711

    MOSFET N-CH 60V 70A TO3P
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    DigiKey 2SK3711 Tube 1,440
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    onsemi 2SK3748

    MOSFET N-CH 1500V 4A TO3PML
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    DigiKey 2SK3748 Tray 100
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    Sanken Electric Co Ltd 2SK3710

    MOSFET N-CH 60V 85A TO220S
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    DigiKey 2SK3710 Bulk 1,000
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    Find more 2SK37 price and stock on Findchips.com

    2SK37 Datasheets (240)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK37 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK37 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK37 Unknown Cross Reference Datasheet Scan PDF
    2SK37 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK37 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK37 Unknown FET Data Book Scan PDF
    2SK37 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2SK370 Toshiba N-Channel MOSFET Original PDF
    2SK370 Unknown FET Data Book Scan PDF
    2SK370 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK370 Toshiba Silicon N channel field effect transistor for low noise audio amplifier applications. Suitable for use as first stage for equalizer and MC head amplifiers Scan PDF
    2SK370 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK3700 Toshiba Field Effect Transistor Silicon N Channel MOS Type Original PDF
    2SK3700(F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 5A TO-3PN Original PDF
    2SK3702 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3702JS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK3703 On Semiconductor 2SK3703 - Power MOSFET 60V 30A 26 mOhm Single N-Channel TO-220FP Original PDF
    2SK3703 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3703-1E On Semiconductor 2SK3703 - N-Channel Power MOSFET, 60V, 30A, 26mOhm, TO-220F-3SG Original PDF
    2SK3704 On Semiconductor 2SK3704 - Power MOSFET 60V 45A 14 mOhm Single N-Channel TO-220FP Original PDF
    ...

    2SK37 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK371

    Abstract: No abstract text available
    Text: TO S H IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SKB71 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 4 0 m S Typ. (VDS = 10V,


    OCR Scan     		2SK371 2SKB71 PDF

    mosfet 45a 200v

    Abstract: 2SK3712
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15


    Original     		2SK3712 O-252 mosfet 45a 200v 2SK3712 PDF

    K3757

    Abstract: 2SK3757
    Text: 2SK3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)


    Original     		2SK3757 SC-67 2-10U1B K3757 2SK3757 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type Product specification 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25


    Original     		2SK3794 O-252 PDF

    K3797

    Abstract: 2SK3797 2SK3797 equivalent
    Text: 2SK3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)


    Original     		2SK3797 SC-67 2-10U1B K3797 2SK3797 2SK3797 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2


    Original     		2SK3731 O-263 PDF

    k3797

    Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 k3797 K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B PDF

    toshiba k3700

    Abstract: 2SK3700 K3700 SC-65
    Text: 2SK3700 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		2SK3700 10VID SC-65 2-16C1B toshiba k3700 2SK3700 K3700 SC-65 PDF

    k3742

    Abstract: K3742 transistor k3742 7 2SK3742
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		2SK3742 k3742 K3742 transistor k3742 7 2SK3742 PDF

    2SK3766

    Abstract: No abstract text available
    Text: 2SK3766 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3766 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.65 S (標準)


    Original     		2SK3766 SC-67 2-10U1B 2SK3766 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3700 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		2SK3700 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC MOSFET SMD Type Product specification 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127


    Original     		2SK3716 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15


    Original     		2SK3712 O-252 PDF

    D1677

    Abstract: 2SK3794-Z 2SK3794
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 MP-3


    Original     		2SK3794 2SK3794 O-251 2SK3794-Z O-252 O-251) O-251/TO-252 O-252) D1677 2SK3794-Z PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 Unit in mm FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • 4.2M AX. High Breakdown Voltage : VGDg = —40V High Input Impedance : IGg g = —l.OnA Max. (VGg = —30V)


    OCR Scan     		2SK372 55MAX. PDF

    TF-2502

    Abstract: No abstract text available
    Text: 2SK3784-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		2SK3784-01 O-220AB TF-2502 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3769-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Digital Audio Amp. DC-DC converters


    Original     		2SK3769-01MR O-220F PDF

    2SK37

    Abstract: FUJI DS-100
    Text: 2SK3771-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Digital Audio Amp. DC-DC converters


    Original     		2SK3771-01MR O-220F Isol200 2SK37 FUJI DS-100 PDF

    2sk3773

    Abstract: 2SK3773-01MR sd 2955
    Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		2SK3773-01MR O-220F dV/d200 2sk3773 2SK3773-01MR sd 2955 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		2SK3772-01 O-220AB PDF

    300v 32a mosfet

    Abstract: No abstract text available
    Text: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators


    Original     		2SK3773-01MR O-220F Repetitive200 300v 32a mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3707 Ordering number : EN7706A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3707 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=45mΩ (typ.) 4V drive • Input capacitance Ciss=2150pF (typ.) Specifications


    Original     		EN7706A 2SK3707 2150pF PW10s, PDF

    2955 mos

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3774-01L 2955 mos PDF

    2SK3771-01MR

    Abstract: 2SK3771
    Text: 2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		2SK3771-01MR O-220F dV/d200 2SK3771-01MR 2SK3771 PDF