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    2SK957 Price and Stock

    Fuji Electric Co Ltd 2SK957MR

    TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,2A I(D),TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK957MR 379
    • 1 $14.1
    • 10 $14.1
    • 100 $5.64
    • 1000 $5.17
    • 10000 $5.17
    		Buy Now

    Fuji Electric Co Ltd 2SK957

    TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,2A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK957 202
    • 1 $12.3
    • 10 $12.3
    • 100 $4.92
    • 1000 $4.92
    • 10000 $4.92
    		Buy Now

    2SK957 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK957 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK957 Unknown FET Data Book Scan PDF
    2SK957-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK957-01 Collmer Semiconductor F-II, FAP, F-III, F-V Series Modules Scan PDF
    2SK957-01M Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK957-M Fuji Electric N-Channel Silicon Power Mosfet Scan PDF
    2SK957-M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK957-MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK957-MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK957-MR Fuji Electric Power MOSFET Scan PDF
    2SK957-MR Fuji Electric Silicon N-Channel MOS FET Scan PDF

    2SK957 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK957-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54 UPS


    Original     		PDF 2SK957-MR O-220F15 SC-67

    2SK957-MR

    Abstract: P channel MOSFET 1A 2SK95 u3020
    Text: 2SK957-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54 UPS


    Original     		PDF 2SK957-MR O-220F15 SC-67 2SK957-MR P channel MOSFET 1A 2SK95 u3020

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SK957-M

    Abstract: No abstract text available
    Text: 2SK957-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK957-M SC-67 40Vds A2-60 100ms

    957-M

    Abstract: No abstract text available
    Text: 2SK957-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V Gs s = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK957-M A2-59 957-M

    Untitled

    Abstract: No abstract text available
    Text: 2SK957-MR FUJI PO W ER M O S-FET N CHANNEL SILICON POWER MOS-FET F -II SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • '/gss= ± 30V Guarantee ■ Applications


    OCR Scan     		PDF 2SK957-MR EHTS30

    2SK957-M

    Abstract: No abstract text available
    Text: 2SK957-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-II SER IES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK957-M SC-67 40nce A2-60 100ms

    2SK957-MR

    Abstract: 2sk957
    Text: 2SK957-MR FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-II SERIES Outline Drawings ¡Features High speed switching 1Low on-resistance 1No secondary breakdown Low driving power ' High voltage >Vgss= ± 3 0 V Guarantee •Applications S w itc h in g regulators


    OCR Scan     		PDF 2SK957-MR SC-67 Tc-25Â BTS30S3^ 2SK957-MR 2sk957

    1117 FG

    Abstract: H1h fet LM 7680 2SK957-MR ffi25
    Text: 2SK957-MR FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving pow er • High voltage • VGss= ± 3 0 V Guarantee ■ Applications


    OCR Scan     		PDF 2SK957-MR SC-67 1117 FG H1h fet LM 7680 2SK957-MR ffi25

    l00a

    Abstract: ic l00a 1117 FG 2SK957-MR 2SK957
    Text: 2SK957-MR FUJI POWER M OS-FET N CHANNEL SILICON POWER MOS-FET F -II S ER IES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •V Gs s = ± 3 0 V Guarantee ■ Applications


    OCR Scan     		PDF 2SK957-MR SC-67 l00a ic l00a 1117 FG 2SK957-MR 2SK957

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    2sk1005

    Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
    Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 CT03P t-39-13 2MI50F-050 2MI50S-050 2MI100F-025 2MI100F-050 2MI200F-025 6MI15FS-050 6MI20FS-025 2sk1005 T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101

    2SK2079-01M

    Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
    Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45


    OCR Scan     		PDF 2SK905 2SK906 2SK900 T0220 2SK947M T0220F15 2SK901 2SK1549 T03PF 2SK902 2SK2079-01M 2SK2079 2SK2001-01M

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102

    2SK725A

    Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
    Text: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899


    OCR Scan     		PDF 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK725A 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953

    2SK962

    Abstract: T03P 2MI200F-025
    Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 T03PF 2SK1008-01 2SK1010-01 2SK1012-01 2SK1014-01 T03P 2MI200F-025

    2SK2079

    Abstract: 2SK2079-01M
    Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)


    OCR Scan     		PDF 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK2079 2SK2079-01M

    2SK1212

    Abstract: 2sk904 replacement
    Text: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas


    OCR Scan     		PDF 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 2SK1212 2sk904 replacement

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    90T03P

    Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
    Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn


    OCR Scan     		PDF FAP-11 T03PF 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 2SK1024-01 90T03P 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors