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    2T1 TRANSISTOR Search Results

    2T1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2T1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA

    transistor s9012

    Abstract: S9012 2T1 SOT-23 S9012 SOT-23 S9012 SOT23 S9012 2T1 SOT-23 2t1 transistor S9013 SOT23 S9013 SOT-23 s9012 transistor
    Text: S9012 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9013 Excellent hFE linearity — MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage


    Original     		PDF S9012 OT-23 OT-23 S9013 -100A, -50mA -500mA, transistor s9012 S9012 2T1 SOT-23 S9012 SOT-23 S9012 SOT23 S9012 2T1 SOT-23 2t1 transistor S9013 SOT23 S9013 SOT-23 s9012 transistor

    transistor s9012

    Abstract: S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA transistor s9012 S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA

    2t1 SOT-23

    Abstract: S9012LT1
    Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -25 -40 -5 -500 300 2.4 417 S9012LT1=2T1 -25 -0.1 -40 -100 -5.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9012LT1 OT-23 S9012LT1 -20Vdc, -50mAdc) -150uA -100uA -50uA 2t1 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to TP9013NND03 Excellent hFE linearity


    Original     		PDF WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA,

    2t1 transistor

    Abstract: marking 2t1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to TP9013NND03 Excellent hFE linearity


    Original     		PDF WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA, 2t1 transistor marking 2t1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE


    Original     		PDF WBFBP-03B S9012M WBFBP-03B S9013M 150mW -50mA -500mA,

    transistor s9012

    Abstract: S9012 2T1 SOT-23 s9012 2T1 SOT-23 S9012 equivalent 2t1 transistor S9012 SOT-23 S9012 data sheet transistor SOT23 2t1 Transistor S9013
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= -500mA） z Complementary To S9013. z Excellent HFE Linearity. S9012 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION


    Original     		PDF -500mA S9012 S9013. OT-23 BL/SSSTC081 transistor s9012 S9012 2T1 SOT-23 s9012 2T1 SOT-23 S9012 equivalent 2t1 transistor S9012 SOT-23 S9012 data sheet transistor SOT23 2t1 Transistor S9013

    2t1 transistor

    Abstract: S9012M S9013M
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE


    Original     		PDF WBFBP-03B S9012M WBFBP-03B S9013M 150mW 2t1 transistor S9012M S9013M

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE


    Original     		PDF WBFBP-03B S9012M WBFBP-03B S9013M 150mW

    2T1 SOT-23

    Abstract: AV9012LT1 S9012LT1 AV9012
    Text: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 AV9012LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 AV9012LT1 -50mA -500mA -20mA 30MHz S9012LT1 2T1 SOT-23 AV9012LT1 AV9012

    9012LT1

    Abstract: No abstract text available
    Text: SHENZHEN ICHN ELECTRONICS TECH. CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 9012LT1 2. EMITTER TRANSISTOR（ PNP ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage


    Original     		PDF OT-23 OT--23 9012LT1 -100A -100A -500mA -20mA 30MHz 9012LT1

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 S9012LT1 -50mA -500mA -20mA 30MHz S9012LT1

    S9012

    Abstract: transistor s9012 S9012 2T1 SOT-23 S9012 2T1 2t1 transistor S9012 SOT-23 S9012 SOT23
    Text: S9012 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 1 2 PCM : 0.3 W


    Original     		PDF S9012 OT-23 -500mA 30MHz 17-Dec-2007 S9012 transistor s9012 S9012 2T1 SOT-23 S9012 2T1 2t1 transistor S9012 SOT-23 S9012 SOT23

    IEC 60947-4-1 for ABB

    Abstract: ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode
    Text: Main Catalogue Low Consumption d.c. Operated Contactors AL Contactors NL Contactor Relays 80 1SBC141135C0301 ABB Entrelec AL 9 . AL 40 Contactors NL. Contactor Relays d.c. Operated Contents Ordering details 3-pole Contactors – AL. screw and spring terminals . 5


    Original     		PDF 1SBC141135C0301 1SBC101139C0201 F-69685 C0201 IEC 60947-4-1 for ABB ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode

    smd transistor 2t1

    Abstract: smd 2t1 2T1 SOT-23 KST9012 2t1 transistor MARKING SMD PNP TRANSISTOR 1301 smd L120H 2t1 TRANSISTOR smd
    Text: IC Transistors SMD Type PNP Transistor KST9012 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Collector Current :IC=-0.5A +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent hFE liearity 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1


    Original     		PDF KST9012 OT-23 -50mA -20mA 30MHz smd transistor 2t1 smd 2t1 2T1 SOT-23 KST9012 2t1 transistor MARKING SMD PNP TRANSISTOR 1301 smd L120H 2t1 TRANSISTOR smd

    2T1 SOT-23

    Abstract: S9012LT1 sot23 marking a2
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9012LT1 2. EMITTER TRANSISTOR（ PNP ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A


    Original     		PDF OT-23 OT--23 S9012LT1 -100A -20mA 037TPY 950TPY 550REF 022REF 2T1 SOT-23 S9012LT1 sot23 marking a2

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMS9012 MMS9012-L MMS9012-H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF MMS9012 MMS9012-L MMS9012-H OT-23 -55OC OT-23

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE bt.SB'm 0026154 2T1 D A APX £iN < ti< £o 2N4126 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications fo r consumer service.


    OCR Scan     		PDF 2N4126 2N4123 2N4124. 2N4125

    2N4126

    Abstract: 2N4123 2N4124 2N4125
    Text: N AMER PHILIPS/DISCRETE bTE T> m bL.SB'm GG2Û154 2T1 H A P X A 2N4126 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic T O -92 envelopes, p rim a rily intended fo r low -pow er, small-signal a u d io ­ frequency applica tio ns f o r consum er service.


    OCR Scan     		PDF 2N4126 2N4123 2N4124. 2N4125 2N4126 2N4124

    TRW catalogue

    Abstract: No abstract text available
    Text: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,


    OCR Scan     		PDF 4194304-BIT 262144-WORD 16-BIT 40P5P 40pin 475mil 24Tfl5S M5M4V4170J TRW catalogue

    D733K

    Abstract: D733 80 watts power amplifier B697K 2SB697 3733 d83x RIXCE 2SD733 K320
    Text: 2SD733, 733K N P N / p n p Epitaxial M esa Type Silicon Transistor For AF Power Amplifier Use 2SB697 697K ★ A complementary pair. ★ For output stage of 8 0 w a tts p o w e r amplifier ★ High voltage, large curren t ability. ★ shows 2SB697, —K only


    OCR Scan     		PDF 2SD733, 2SB697 2SB697, C468D TC-25 2SBA97, 2SD733 R697K, B697K. D697K D733K D733 80 watts power amplifier B697K 3733 d83x RIXCE 2SD733 K320

    2t1 SOT-23

    Abstract: S9012LT1
    Text: SOT-23 P lastic-E n cap su late Transistors 1 .BASE 2 .EMITTER 3.COLLECTOR S9012LT1 TRANSISTO R PNP Power dissipation Pcm : 0 .3 W (Tamb=25°C) Collector current ICM : -0.5 A « Collector-base voltage V ( b r )c b o : -4 0 V Operating and storage junction temperature range


    OCR Scan     		PDF OT-23 S9012LT1 -100u 2t1 SOT-23