Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M
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WBFBP-03B
S9013M
WBFBP-03B
500mA)
S9012M
150mW
500mA
500mA
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE
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WBFBP-03B
S9012M
WBFBP-03B
S9013M
150mW
-50mA
-500mA,
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2t1 transistor
Abstract: S9012M S9013M
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE
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Original
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WBFBP-03B
S9012M
WBFBP-03B
S9013M
150mW
2t1 transistor
S9012M
S9013M
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PDF
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S9012M
Abstract: S9013M
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M
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Original
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WBFBP-03B
S9013M
WBFBP-03B
500mA)
S9012M
150mW
S9012M
S9013M
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE
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Original
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WBFBP-03B
S9012M
WBFBP-03B
S9013M
150mW
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PDF
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